Investigation of growth dynamics of faceted grain/grain/melt grain boundary junction during directional solidification of Si
硅定向凝固过程中多面晶粒/晶粒/熔体晶界连接处的生长动力学研究
基本信息
- 批准号:21K20343
- 负责人:
- 金额:$ 1.91万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Research Activity Start-up
- 财政年份:2021
- 资助国家:日本
- 起止时间:2021-08-30 至 2023-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
项目成果
期刊论文数量(6)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Small-angle grain boundaries as sinks for lattice dislocations during directional solidification of silicon
小角度晶界作为硅定向凝固过程中晶格位错的汇
- DOI:
- 发表时间:2021
- 期刊:
- 影响因子:0
- 作者:荘 履中;前田 健作;野澤 純;森戸 春彦;藤原 航三
- 通讯作者:藤原 航三
Dislocation generation from small-angle grain boundaries during directional solidification of multicrystalline silicon
多晶硅定向凝固过程中小角度晶界位错的产生
- DOI:
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Lu-Chung Chuang;Kensaku Maeda;Haruhiko Morito;Kozo Fujiwara
- 通讯作者:Kozo Fujiwara
In situ observation of solidification and subsequent evolution of Ni-Si eutectics
镍硅共晶凝固和后续演化的原位观察
- DOI:10.1016/j.scriptamat.2022.114513
- 发表时间:2022
- 期刊:
- 影响因子:6
- 作者:Chuang Lu-Chung;Maeda Kensaku;Morito Haruhiko;Fujiwara Kozo
- 通讯作者:Fujiwara Kozo
Small-angle grain boundaries as sources of generation and absorption of dislocations during directional solidification of multicrystalline silicon
小角度晶界作为多晶硅定向凝固过程中位错产生和吸收的来源
- DOI:
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:荘 履中;前田 健作;野澤 純; 森戸 春彦;藤原 航三
- 通讯作者:藤原 航三
Decomposition of small-angle grain boundaries during directional solidification of multicrystalline silicon
多晶硅定向凝固过程中小角度晶界的分解
- DOI:
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Lu-Chung Chuang;Kensaku Maeda;Haruhiko Morito;Kozo Fujiwara
- 通讯作者:Kozo Fujiwara
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Chuang Lu-Chung其他文献
Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon
多晶硅定向凝固过程中界面结构对小角度晶界扩展方向的影响
- DOI:
10.1016/j.scriptamat.2019.07.018 - 发表时间:
2019 - 期刊:
- 影响因子:6
- 作者:
Chuang Lu-Chung;Kiguchi Takanori;Kodama Yumiko;Maeda Kensaku;Shiga Keiji;Morito Haruhiko;Fujiwara Kozo - 通讯作者:
Fujiwara Kozo
Difference in growth rates at {1 1 0} and {1 1 1} crystal/melt interfaces of silicon
硅的{1 1 0}和{1 1 1}晶体/熔体界面处的生长速率差异
- DOI:
10.1016/j.jcrysgro.2022.126784 - 发表时间:
2022 - 期刊:
- 影响因子:1.8
- 作者:
Mishra Shashank Shekhar;Chuang Lu-Chung;Maeda Kensaku;Nozawa Jun;Morito Haruhiko;Fujiwara Kozo - 通讯作者:
Fujiwara Kozo
Chuang Lu-Chung的其他文献
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