A RESEARCH ON QUANTUM DOT BASED MATERIAL FOR WAVELENGTH-DIVISION-MULTIPLICATION MEMORY APPLICATIONS

用于波分倍增存储器应用的量子点材料研究

• 批准号: 09450001
• 负责人: MUTO Shunichi
• 金额: $ 8.7万
• 依托单位: HOKKAIDO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-09450001/
• 关键词: quantum dots; wave-division-multiplication; optical memory; scaling; tunneling; lattice deformation; atomic diffusion; stacking; 拡散; イオンチャネリング; 光メモリー; スケール関数; 多層化; 転位

Now it is possible to form quantum dots in which electrons show its wavenature as their discrete energy levels. So far, however, the size of the dots is not uniform. This study aim at using those inhomogeneous quantum dots for wave-division-multiplication optical memory based on the fact that quantum dots respond to light with a specific wavelength corresponding to its size.We discovered scaling functions of the size distribution and the position distribution of the InAs/GaAs self-assembled quantum dots(SAQDs)grown by molecular beam epitaxy(MBE). This indicates that the mechanism governing the formation of the dots is described by a rather simple picture.We studied a possibility to enhance the memory duration using tunneling effect, and confirmed the tunneling of the electrons from InAlAs SAQDs through an AlGaAs tunneling barrier to the AlAs layer. Also, we showed possibilities to increase the effective density of dots using a stacking technique.The lattice deformation and atomic diffusion of the InAs/GaAs SAQD were studied by ion channeling method. It was shown that the Ga diffusion depended strongly on the InAs coverage and that there were two regions of growth modes identified : one with larger dots with little Ga diffusion and the other with smaller dots with evident Ga diffusion.

现在有可能形成量子点，在量子点中，电子以离散能级的形式显示其波浪形。然而，到目前为止，这些圆点的大小并不均匀。基于量子点对特定波长的光的响应特性，研究了分子束外延(MBE)生长的InAs/GaAs自组装量子点的尺寸分布和位置分布的尺度函数，旨在将这些不均匀的量子点用于波分倍增光存储。我们研究了一种利用隧道效应提高存储时间的可能性，并证实了电子从InAlAs SAQD通过AlGaAs隧道势垒到AlAs层的隧穿。用离子沟道方法研究了InAs/GaAsSAQD的晶格形变和原子扩散。结果表明，Ga的扩散强烈依赖于InAs的覆盖率，并且存在两种生长模式：一种是较大的点，但Ga扩散很少；另一种是较小的点，但Ga的扩散明显。

项目成果

S.Muto: "Volume distributions of InAs/GaAs self-assembled quantum dots by Stranski-Krastanow mode of Molecular Beam Epitaxy"Material Science in Semiconductor Processing. 1・2. 131-140 (1998)

S.Muto：“分子束外延 Stranski-Krastanow 模式的 InAs/GaAs 自组装量子点的体积分布”《半导体加工材料科学》1・2（1998 年）。

Y.Sugiyama et.al.: "Observation of spectral hole buming in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode"Electron.Lett.. Vol.33, No.19. 1655-1656 (1997)

Y.Sugiyama等人：“嵌入pin二极管中的InAs自组装量子点光电流光谱中光谱空穴燃烧的观察”Electron.Lett.第33卷，第19期。

T.Haga et.al.: "Interdiffusion between InAs quantum dots and GaAs matrices"Jpn.J.Appl.Phys.. Vol.36, No.8B. L1113-L1115 (1997)

T.Haga等人：“InAs量子点和GaAs矩阵之间的相互扩散”Jpn.J.Appl.Phys..Vol.36，No.8B。

Y.Ebiko: "Scaling properties of InAs/GaAs self-assembled quantum dots"Phys.Rev.B. 60・11. 8234-8237 (1999)

Y.Ebiko：“InAs/GaAs自组装量子点的缩放特性”Phys.Rev.B. 8234-8237（1999）

N.Matsumura: "Lattice deformation and interdiffusion of InAs quantum dots on GaAs (100)"J.Appl.Phys.. 89・1. 160-164 (2001)

N.Matsumura：“GaAs 上 InAs 量子点的晶格变形和相互扩散（100）” J.Appl.Phys.. 89・1（2001）。