权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Shea-Mode Grinding of Silicon Crystal and Damage Analysis

硅晶体的Shea模式研磨及损伤分析

基本信息

批准号：
10045053
负责人：
OGITA Yoh-Ichirro
金额：
$ 2.24万
依托单位：
Kanagawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

项目摘要

Engineered Tool is produced to have many small posts on a single crystal diamond surface. The post size, form, and density can be designed flexibly. In addition, it is possible to align crystallographic orientation of posts. The posts were precisely machined to be 20μm apart, 5 × 5μm square, and 10μm high on 2x2x1 mm diamond, using the KrF Excimer laser(wave length, 248nm). A fly-cut experiment of fused silica was performed using this Engineered Tool. As a result, it was found fused silica can be machined in ductile mode under 0.1μm depth of cut. And, in a fly-cut experiment of single-crystal Si with ultrasonic vibration, ductile mode surface was observed under 0.2μm depth of cut. Concerning to design concept of the post patterns, harmonic type design and non-harmonic type design were proposed for the use with ultrasonic vibration.In order to characterize the polishing damage in subsurface of silicon wafers, three new methods as a surface potential, a photoconductivity-frequency response, an electron beam tomography have been proposed in addition to two methods as an UV/millimeter-wave PCD and PPCA.The mirror polishing-pressure vs.damage characteristics measured using the surface potential method was in well agreement with one with PPCA, where the damage has been founded to be minimum at 65g/cm2 in the CMP process. The CMP damage in Si wafers in commercial use for ULSI was founded to be detected by UV/millimeter PCD method and also founded to be removed by 3 SC1 cleanings besides founded the depth to be 21nm.

工程工具是生产有许多小职位上的单晶金刚石表面。可灵活设计立柱的尺寸、形状和密度。此外，可以对准柱的结晶取向。使用KrF准分子激光器（波长，248 nm）在2x2 x1 mm金刚石上将桩精确加工为20μm间距、5 × 5μm正方形和10μm高。使用该工程工具进行熔融石英的飞切实验。结果表明，熔融石英在0.1μm的切削深度下可以进行延性加工。在超声振动飞切单晶硅的实验中，在0.2μm的切深下观察到了韧性模表面。针对超声波振动下抛光柱图形的设计思想，提出了谐振型和非谐振型两种设计方案，并提出了表面电位法、光电导-频率响应法、除了UV/毫米波PCD和PPCA两种方法外，还提出了电子束层析成像。用表面电位法测得的压力-损伤特性与PPCA法测得的压力-损伤特性完全一致，在PPCA法中发现CMP工艺中的损伤在65 g/cm 2时最小。ULSI工业用硅片的CMP损伤可以用UV/毫米波PCD方法检测到，除深度为21 nm外，还可以用3次SC 1清洗去除。