权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Studies on the structure of the interface between a metal and an organic thin film and voltage-induced processes by using infrared reflection-absorption spectroscopy

利用红外反射吸收光谱研究金属与有机薄膜之间的界面结构和电压诱导过程

基本信息

批准号：
11440179
负责人：
FURUKAWA Yukio
金额：
$ 6.85万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

We have developed an infrared reflection-absorption spectroscopic method with a 45 degree incident angle in order to study organic light-emitting diodes and organic metal-insulator-semiconductor diodes. These devices have multilayer structures consisting of a metal electrode, an indium-tin-oxide (ITO) electrode, and organic compounds. In the infrared reflection-absorption spectra of organic light-emitting diodes, infrared bands are strongly observed with the p-polarization and weakly observed with the s-polarization. These results have been explained as follows. For the p-polarization, the intensity of the standing wave produced by the interference of the incident and reflected beams is strong in the direction of the surface normal at the metal surface. On the other hand, for the s-polarization, the resulting standing wave is extremely weak at the metal surface. The orientations of polymer chains have been determined by measuring the reflection-absorption and transmission-absorption spectra of polymer thin films. The voltage-induced infrared absorption spectra of polymer light-emitting diodes and polymer metal-insulator-semiconductor diodes have been measured by using the FT-IR difference spectrum method. The observed spectra have been attributed to injected carriers (polarons). The injected carrier balance of polymer light-emitting diodes have been discussed on the basis of the observed results. It has been demonstrated that infrared reflection-absorption spectroscopy is a powerful tool for studying the structures and orientation of organic compounds and injected carriers in organic electronic devices.

我们发展了一种45度入射的红外反射-吸收光谱法，用于研究有机发光二极管和有机金属-绝缘体-半导体二极管。这些器件具有由金属电极、氧化铟锡（ITO）电极和有机化合物组成的多层结构。在有机电致发光器件的红外反射-吸收光谱中，p偏振态的红外波段较强，s偏振态的红外波段较弱。这些结果解释如下。对于p偏振，由入射光束和反射光束的干涉产生的驻波的强度在金属表面处的表面法线的方向上是强的。另一方面，对于s偏振，所产生的驻波在金属表面处非常弱。通过测量聚合物薄膜的反射-吸收光谱和透射-吸收光谱，确定了聚合物链的取向。用傅里叶变换红外差谱法测量了聚合物发光二极管和聚合物金属-绝缘体-半导体发光二极管的电压感生红外吸收光谱。观察到的光谱已被归因于注入的载流子（极化子）。根据实验结果讨论了聚合物发光二极管的注入载流子平衡。红外反射-吸收光谱是研究有机电子器件中有机化合物和注入载流子的结构和取向的有力工具。