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Preparatopm amd EL property of Si nano-particle dispersed oxide filmd by ECR plasma oxidation of siricon carbide

碳化硅ECR等离子体氧化制备纳米硅颗粒分散氧化物薄膜及其EL性能

基本信息

批准号：
14350346
负责人：
GOTO Takasi
金额：
$ 7.36万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350346/
关键词：
Silicon carbide nano-Si particle Electron cyclotron resonance ECR plasma oxidation Oxygen pertial pressure Photo luminescence SiO film RF magnetron sputtering RFマグトロンスパッタ窒素-酸素雰囲気 Si面-C面屈折率低温酸化

项目摘要

In this research, it succeeded in the preparation of Si nano-particle dispersed oxide films by oxidation of chemically vapor deposited (CVD) SiC substrates using electron cyclotron resonance (ECR) plasma. The effects of temperature, oxygen partial pressure and crystal surface (i. e. Si face and C face) on film structure, and photo-luminescence (PL) characteristics were investigated.(1)The oxide thickness on the C face was larger than that on the Si face in both N_2-O_2 and Ar-O_2 atmospheres. The oxide formation in Ar-O_2 atmosphere proceeded at lower oxygen partial pressures than that in N_2-O_2 atmosphere. The oxidation rates of C-face were faster those of Si-face at high O_2 partial pressures. It was found the ECR plasma was particularly effective to oxidize SiC at low temperatures rather than thermal oxidation and microwave plasma oxidation.(2)Nano-Si dispersed SiO_2 films were obtained at oxidation temperature of 473-673K, oxygen partial pressure of 2.0×10^<-4>〜4.0×10^<-4> Pa in Ar-O_2 atmospheres. Deposition rate was about 100nm/h. Si nano particles size were about 4-5 nm in diameter. Strong PL peaks were observed at wavelength of 550 nm and 630 nm. The intensity of PL peaks increased with increasing oxide thickness and decreasing oxidation temperature.(3)SiO films were deposited by RF magnetron sputtering using a SiO target at substrate temperatures from RT to 973K. Amorphous SiO films were obtained in a range between RT and 773K, Nano-silicon clusters about 3-4 nm in diameter were observed in the film deposited at RT and heat-treated at 1173K in Ar. Nano-silicon clusters around 5 nm in diameter were observed in the film deposited at 973K. PL was observed at a wavelength of 300nm for the film deposited at 973K, and at 400nm for the film heat-treated at 1173K.

在这项研究中，它成功地在硅纳米颗粒分散的氧化物薄膜的制备化学气相沉积（CVD）SiC衬底使用电子回旋共振（ECR）等离子体的氧化。讨论了温度、氧分压和晶体表面（即表面）对晶体生长的影响. e. Si面和C面）对薄膜结构和光致发光（PL）特性的影响。（1）在N_2-O_2和Ar-O_2气氛下，C面的氧化层厚度大于Si面。在Ar-O_2气氛中，氧化物的形成比在N_2-O_2气氛中的氧化物的形成在更低的氧分压下进行。在高氧分压下，C面的氧化速率比Si面快。结果表明，ECR等离子体在低温下氧化SiC比热氧化和微波等离子体氧化更有效。（2）在Ar-O_2气氛中，氧化温度为473- 673 K，氧分压为2.0× 10 ~（-4）Pa时，得到了纳米Si分散的SiO_2薄膜<-4><-4>。沉积速率约为100 nm/h。Si纳米粒子的直径约为4-5 nm。在550 nm和630 nm处观察到较强的PL峰。随着氧化层厚度的增加和氧化温度的降低，PL峰的强度增加。（3）在室温至973 K的衬底温度范围内，用射频磁控溅射法制备了一氧化硅薄膜。在室温到773 K的温度范围内得到了非晶的SiO薄膜，在室温下沉积的薄膜中观察到了直径约3-4 nm的纳米硅团簇，并在1173 K的Ar气氛中进行了热处理。在973 K沉积的薄膜中观察到直径约为5 nm的纳米硅团簇。在973 K下沉积的薄膜在300 nm处观察到PL，在1173 K下热处理的薄膜在400 nm处观察到PL。