Atmospheric-pressure plasma processes for high-rate film formation applicable for thin crystalline Si solar cells

为了在600℃下用大气压等离子体化学气相沉积技术稳定生长硅外延薄膜，研制了一种新的水冷电极系统。利用该系统，SiH4的利用率提高了2倍，利用较小的等离子体间隙抑制了输入功率，实现了高速生长，实现了对原位掺杂外延的精确控制。在400℃下，用AP He等离子体氧化硅制备了具有良好电学性能的SiO_2薄膜，并表现出良好的表面钝化质量。还开发了在露天条件下的AP-Ar等离子体氧化工艺，以形成高质量的SiO_2薄膜。

Atmospheric pressure (AP) plasma processes applicable for the formation of thin crystalline Si solar cells have been developed.For the stable growth of Si epitaxial films at 600 C by AP plasma chemical vapor deposition, a new water cooled electrode system was developed. By using this system, 2 times higher utilization efficiency of SiH4 than the previous one, the high-rate growth with the suppressed input power using a smaller plasma gap, and the precise control of in-situ doping epitaxy were achievable.SiO2 films with good electrical properties were grown at 400 C by AP He plasma oxidation of Si, and a good surface passivation quality was demonstrated. AP Ar plasma oxidation process under an open air condition has also been developed to form high quality SiO2 films.