Collaboration of Education/Research on Nano-Structgured Semiconductor Devices

该研究计划的目的是发展格里菲斯大学集团（由Barry Harrison教授领导的GUG）和我们集团（UECG）之间在纳米结构半导体材料和器件方面的教育和研究的国际合作。我们曾两次邀请GUG的研究生j.k ombes先生作为交换生，他对半导体位置敏感探测器的研究进展做出了杰出的贡献。作为双方的研究交流，双方的多位学术人员。两所大学相互访问，利用两所大学的各种半导体工艺设施开发纳米结构半导体器件。我们使用颗粒金属组成的分流电阻以及许多GalnP/GaAs光电探测器开发了位置敏感器件。我们还研究了半导体的纳米结构引起的相变。除了发现纳米结构Ge的新相外，我们还发现纳米结构Si可以转变为Wurzite结构，这是一种高压形式的晶体Si。通过施加高达10GPa的静水压力，研究了高压形式的Ge晶体的稳定性。通过光氧化作用，团束蒸发技术沉积的纳米结构锗薄膜的团簇尺寸变得均匀。我们发现，即使在室温下，氧化后的锗膜也能表现出库仑封锁效应。在UECG和GUG中讨论了利用这种现象的可能的单电子器件。

The aim of the research program is to develop international collaboration of education and research on nano-structured semiconductor materials and devices between Griffith University Group (GUG headed by Professor Barry Harrison) and our group (UECG). We have invited twice Mr. J.Combes, a post-graduate student of GUG as an : exchange student, who has made excellent contribution to the progress of the research on the semiconductor position sensitive detector. As a research interchange between GUG and UECG, several academic staffs from both. Universities have visited each other to develop nana-structured semiconductor devices using various semiconductor process facilities in both Universities. We have developed the position sensitive devices using a current-dividing resistor composed of granular metal as well as many GalnP/GaAs photo-detectors. We: have also investigated the phase transformation induced by nano-structuring of semiconductors.' In addition to the discovery of the new phase of nano-structured Ge, we have also found that nano-structured Si can transform to the Wurzite structure, a high-pressure form of crystalline Si. The stability of the high-pressure forms of crystalline Ge have been studied by applying hydrostatic pressure as high as 10GPa. The cluster-size in nano-structured Ge films deposited by the cluster-beam evaporation technique becomes very uniform by the photo-oxidation. We have found that the photo-oxidized Ge films can show the coulomb blockade effect even at the room temperature. The possible single electron devices using this phenomenon has been discussed in both UECG and GUG.