DEVELOPMENT OF RF-CMOS SYSTEM FOR WIRELESS MULTI-MEDIA

无线多媒体 RF-CMOS 系统的开发

• 批准号: 12555094
• 负责人: YOKOYAMA Michio
• 金额: $ 8.77万
• 依托单位: YAMAGATA UNIVERSITY (2001-2002)Tohoku University (2000)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555094/
• 关键词: RF-CMOS; Programmable Device; CDMA Power Amplifier; Si Active Inductor; System-in-Package; Si RF Switch; CDMAパワーアンプ; シリコンシステムLSI; 相補型プッシュプルアンプ

Recently, RF-CMOS circuits are being developed intensively because of their cost-effectiveness, and compatibility to widely-used digital CMOS circuits. However, RF circuit design of CMOS is similar to the conventional GaAs circuits which almost consist of n-channel devices only.In this work, complementary MOS circuits which consist of both n- and p-channel devices, i.e., the real RF-CMOS circuits, have been investigated.At first, we have designed and fabricated CMOS devices. After RF measurement, Class-B n-/p-channel CMOS push-pull amplifier has been designed and evaluated by RF simulation. It is confirmed that the efficiency of CMOS push-pull amplifier is higher than that of conventional one.Next, we have developed the silicon active inductors with smaller size and medium Q-factor. Furthermore, silicon RF switches are also developed. Both devices consist of combination of silicon MOSFETs. RF performances are analyzed by using RF simulation.On the self-aligned barrier layer, aluminum films are successfully deposited in the same process chamber without breaking the vacuum. It is found that the aluminum films are selectively deposited on the conductive barrier layer.We have found that above results show that all-silicon low-cost RF-CMOS functional circuit blocks can be designed and this leads to silicon RF programmable devices for wireless terminals.

近年来，射频CMOS电路因其性价比高，且与广泛使用的数字CMOS电路兼容而得到了广泛的发展。然而，CMOS的射频电路设计与传统的砷化镓电路相似，几乎只由n通道器件组成。在这项工作中，研究了由n通道和p通道器件组成的互补MOS电路，即真正的RF-CMOS电路。首先，我们设计并制造了CMOS器件。经过射频测量，设计了b类n /p通道CMOS推挽放大器，并通过射频仿真对其进行了评价。实验结果表明，CMOS推挽放大器的效率高于传统推挽放大器。其次，我们开发了尺寸更小、q因子中等的硅有源电感器。此外，还开发了硅射频开关。这两种器件都由硅mosfet组合而成。通过射频仿真对其射频性能进行了分析。在自对准阻挡层上，铝膜成功地沉积在相同的工艺室中，而没有破坏真空。发现铝膜有选择性地沉积在导电阻挡层上。我们发现以上结果表明可以设计全硅低成本RF- cmos功能电路块，从而导致用于无线终端的硅RF可编程器件。

项目成果

Y.Takahashi: "Carry Propagation Free Adder/Subtracter VLSI Using Adiabatic Dynamic CMOS Logic Circuit Technology"IEICE Trans. Foundamentals. (to appear in). (2003)

Y.Takahashi：“使用绝热动态 CMOS 逻辑电路技术的进位传播自由加法器/减法器 VLSI”IEICE Trans。

Y.Takahashi: "Carry Propagation Free Adder/Subtracter VLSI Using Adiabatic Dynamic CMOS Logic Circuit Technology"IEICE Trans. Foundamentals. 6月号(6月掲載予定). (2003)

Y.Takahashi：“使用绝热动态 CMOS 逻辑电路技术的进位传播自由加法器/减法器 VLSI”IEICE Trans 6 月号（计划于 2003 年出版）。

Y.Takahashi: "Carry Propagation Free Adder/Subtracter VLSI Using Adiabatic Dynamic CMOS Logic Circuit Technology"IEICE Trans.Foundamentals. 6月号(6月掲載予定). (2003)

Y.Takahashi：“使用绝热动态 CMOS 逻辑电路技术的进位传播自由加法器/减法器 VLSI”IEICE Trans.Foundamentals 六月号（预定于 6 月出版）。

M.Yokoyama: "A Proposal of Field-Programmable RF Gate Array Devices"Proc. 2002 Int. Tech. Conf. on Circuits/Systems, Computers and Communications(ITC-CSCC 2002), July 17-19 Phuket, Thailand. 767-768 (2002)

M.Yokoyama：“现场可编程射频门阵列器件的提案”Proc。

K.Takahashi: "Sub-One Volt DC Power Supply Expandable 4-bit Adder/Subtracter System using Adiabatic Dynamic CMOS Logic Circuit Technology"Proc. 2002 Int. Tech. Conf. on Circuits/Systems, Computers and Communications(ITC-CSCC 2002), July 17-19 Phuket, Thai

K.Takahashi：“使用绝热动态 CMOS 逻辑电路技术的亚一伏直流电源可扩展 4 位加法器/减法器系统”Proc。