5層非対称結合量子井戸を用いた長波長用超広波長域・超高速光変調デバイスの開発

利用五层非对称耦合量子阱开发超宽波长、超快长波长光调制器件

• 批准号: 12555100
• 负责人: 多田 邦雄
• 金额: $ 8.45万
• 依托单位: Yokohama National University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555100/
• 关键词: 5層非対称結合量子井戸; 光変調器; 光スイッチ; ポテンシャル制御量子井戸; 電界誘起屈折率効果; 分子線エピタキシー法; MEE法; ECRドライエッチング; 光制御デバイス; InGaAs; 電界誘起吸収係数変化; 電界誘起屈折率変化; 分子線エピタキシー

光吸収端波長から十分に長波長側に離れた透明波長域においても、電界誘起屈折率変化Δnが極めて大きいという特長を持つ光通信用長波長域1.55μm帯用InGaAs/InAlGaAs5層非対称結合量子井戸(FACQW)の作製技術を確立し、超広波長域・超高速・超低電圧、低チャープの屈折率変化型多重量子井戸光変調デバイスへ応用するための基礎研究を行った結果、以下の成果を得た。1. FACQW構造の作製と評価分子線エピタキシー(MBE)法を用いて、精密に層厚制御したGaAs/AlGaAs系FACQWおよびModified FACQWを作製、評価し、電界誘起吸収係数変化の傾向が理論と一致していることを確認した。2. FACQWにおける電界誘起屈折率効果への層厚揺らぎの影響の解析GaAs/AlGaAs系FACQWについて、層厚ゆらぎが生じた場合の特性劣化についてシミュレーションによる詳細な解析を行った。3. InGaAs/InAlAs-FACQWの電界誘起屈折率効果の解析InGaAs/InAlAs系FACQWおよびModified FACQWに関して、シミュレーションにより構造の最適化と詳細な特性解析を行った。4. 長波長帯用光制御デバイス作製法の研究長波長帯用光制御デバイスの作製のため、メタン・水素/酸素交互供給によるECRドライエッチング法について研究し、良好な表面平滑性と端面垂直性を得るためのプロセス条件を確立した。5. 分子線エピタキシー(MBE)法およびMigration Enhanced Epitaxy(MEE)法による高品質量子井戸構造の作製MEE(Migration Enhanced Epitaxy)法を応用し、ヘテロ界面の平坦性が極めて良好な量子井戸の低温(490℃)における作製に成功した。これにより、MEEによる高品質InGaAs/InAlAs-FACQWの作製の見通しがついた。

The optical absorption end wave length is very long, the optical absorption end wavelength is very long, the transparent wave length domain wave length is very long, and the power industry is used to refine the Δ n wave length domain. The optical absorption end wave length is very long, the optical absorption end wave length is very long, the optical absorption end wave length is very long, and the optical absorption end wave length is very long. The optical absorption end wave length is very long, and the optical absorption end wave length is very long. The optical absorption end wave length is very long, and the optical absorption end wave length is very long. The optical absorption end wave length is very long, and the optical absorption end wave length is very long. The optical absorption end wave length is very long, and the optical absorption end wave length is very long. The optical absorption end wave length is very long. The optical absorption end wave length is very long. The optical absorption end wave length is very long, and the transparent wavelength domain The multi-quantum well with low refractive rate is used to study the results, and the following results are obtained. 1. The FACQW system is used to determine the accuracy of the MBE method. The FACQW system of the GaAs/AlGaAs system is used to control the performance of the system. The electronic industry absorbs the number of devices to confirm the accuracy of the system. 2. The discount rate of FACQW in the electrical industry is very high. In the case of GaAs/AlGaAs, there is a deterioration of the characteristics of the FACQW system. 3. Analysis of the starting discount rate of the InGaAs/InAlAs-FACQW electrical industry. The InGaAs/InAlAs system is a system of FACQW electrical Modified FACQW equipment, which is used to analyze the characteristics of the system. 4. Long-term optical control system is used in the study of long-term longevity. Long-term optical control is used to control the use of light. The interaction of water and acid is used in the study of long-term ECR, which is characterized by high surface smoothness and good end-face perpendicularity. 5. The molecular line scanning electron microscopy (MBE) method, the Migration Enhanced Epitaxy (MEE) method, the high quality quantum well construction method, the MEE (Migration Enhanced Epitaxy) method, the excellent interface flatness, the low temperature (490 ℃), the low temperature (490 ℃), the high quality quantum well, the low temperature, the low temperature. You can use the high-quality InGaAs/InAlAs-FACQW to communicate with each other in terms of quality and quality.

项目成果

Large Negative Electrorefractive Index Change in Modified Five-Layer Asymmetric Coupled Quantum Well(FACQW)

改进的五层不对称耦合量子阱（FACQW）中大的负电折射率变化

• 发表时间: 2001
• 期刊: Technical Digest of 4th Pacific Rim Conference on Lasers and Electro-Optics(CLEO/PR 2001) 2
• 作者: T. Arakawa;H. Feng;K. Tada;R. Iino;K. Kazuma;and J. H. Noh
• 通讯作者: and J. H. Noh

K.Tada,T.Arakawa,K.Kazuma,N.Kurosawa,and J.-H.Noh: "Influence of One Monolayer Thickness Variation in GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well upon Electrorefractive Index Change"Japanese Journal of Applied Physics. Vol.40,No.2. 656-661 (200

K.Tada、T.Arakawa、K.Kazuma、N.Kurosawa 和 J.-H.Noh：“GaAs/AlGaAs 五层不对称耦合量子阱中单层厚度变化对电折射率变化的影响”日本期刊

T.Suzuki, J.H.Noh, T.Arakawa, K.Tada, Y.Okamiya, Y.Miyagi, N.Sakai, N.Haneji: "Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well(FACQW)"Jpn. J. Appl. Phys.. 41,4B(4月号掲載予定). (2002)

T.Suzuki、J.H.Noh、T.Arakawa、K.Tada、Y.Okamiya、Y.Miyagi、N.Sakai、N.Haneji：“五层不对称耦合量子阱（FACQW）的制造和光学表征”Jpn。 J. Phys.. 41,4B（预定于 2002 年 4 月出版）。

Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well(FACQW)

五层不对称耦合量子阱（FACQW）的制备和光学表征

• 发表时间: 2002
• 期刊: Jpn. J. Appl. Phys 41・4B(掲載予定)
• 作者: T. Suzuki;J. H. Noh;T. Arakawa;K. Tada;Y. Okamiya;Y. Miyagi;N. Sakai;and N. Haneji
• 通讯作者: and N. Haneji

K.Tada, T.Arakawa, J.-H.Noh, T.Suzuki, Y.Okamiya: "Optical Modulators Based on Potential-Tailored Quantum Wells for Broad Band Optical Fiber Communication"Int'l Conf. on Broad Band Optical Fiber Communication Technology (BBOFCT-2001). 119-124 (2001)

K.Tada、T.Arakawa、J.-H.Noh、T.Suzuki、Y.Okamiya：“用于宽带光纤通信的基于潜在定制量子阱的光调制器”国际会议。