Study on Epitaxial Growth of ZnO Thin Films on Si Substrates and Formation of Light Emitting Devices with Near Ultra Violet Laser Emission

Si衬底上外延生长ZnO薄膜及近紫外激光发射器件的研究

• 批准号: 13450125
• 负责人: NAKANISHI Yoichiro
• 金额: $ 9.34万
• 依托单位: Research Institute of Electronics, Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450125/
• 关键词: ZnO; Zn_<1-x>Mg_xO; Si; epitaxial growth; exciton; near ultra violet ray; LED; PL; Zn_<1-x>Mg_XS; ZnS

This study has been carried out aiming to form light emitting devices with nrsr ultra violet laser emission using ZnO epitaxial thin films grown on Si substrates by new method developed in this study. New results obtained in this study are described below.*Formation of ZnO epitaxial thin films on Si(111) substratesThe epitaxial ZnO thin film which, shows dominantly the exciton emission could be formed successfully for the first time by oxidation of an epitaxial ZnS film on the Si(111) substrate in oxygen atmosphere, although the formation of the epitaxigl thin films of oxides on Si substrates has been very difficult so far.*Band gap control of by formation of Zn_<1-x>Mg_xO solid-solution epitaxial thin films on Si(111) substratesZn_<1-x>Mg_xO solid-soution thin films could be formed successfully on Si substrates by the oxidation of Zn_<1-x>Mg_xS epitaxial films deposited by electron beam evaporation using pellets mixed with ZnS and MgS as an evaporation source. It was confirmed that peak energy of the exciton emission was shifted from 3.34 eV of ZnO to 3.45 eV of Zn_<0.85>Mg_<0.1>5O.*Conduction control of Zn_<1-x>Mg_xO epitaxial thin films on Si(111) SubstratesIn this study, laser doping method which does not need high temperature annealing was tried. The formation of n-type ZnO and Zn_<1-x>Mg_xO thin films could be done using Al or Ga as dopant by the irradiation of KrF excimer laser. The p-type formation using Sb could be confirmed, but high conductivity was not obtained. It was shown in this study that the formation of ZnO light emission device with near ultra-violet emission can be expected.

本研究的目的是通过本研究开发的新方法，使用在硅衬底上生长的 ZnO 外延薄膜来形成具有 NRSR 紫外激光发射的发光器件。本研究中获得的新结果描述如下。 *在Si(111)衬底上形成ZnO外延薄膜虽然在Si(111)衬底上形成了氧化物外延薄膜，但在氧气气氛中，通过在Si(111)衬底上氧化外延ZnS薄膜，首次成功地形成了以激子发射为主的外延ZnO薄膜。 迄今为止，Si衬底上的带隙控制非常困难。 *在Si(111)衬底上形成Zn_<1-x>Mg_xO固溶外延薄膜来控制带隙通过电子束沉积的Zn_<1-x>Mg_xS外延薄膜的氧化，可以在Si衬底上成功形成Zn_<1-x>Mg_xO固溶薄膜。 使用与 ZnS 和 MgS 混合的颗粒作为蒸发源进行蒸发。证实激子发射的峰值能量从ZnO的3.34 eV转移到Zn_<0.85>Mg_<0.1>5O的3.45 eV。*Si(111)衬底上Zn_<1-x>Mg_xO外延薄膜的传导控制本研究尝试了不需要高温退火的激光掺杂方法。以Al或Ga为掺杂剂，在KrF准分子激光照射下可以形成n型ZnO和Zn_1-x>Mg_xO薄膜。可以确认使用Sb形成p型，但没有获得高导电性。本研究表明，有望形成近紫外发射的ZnO发光器件。

项目成果

液相反応によるZn_<1-x>Mg_xO蛍光体の合成と発光特牲

液相反应合成Zn_<1-x>Mg_xO荧光粉及其发光性能

• 发表时间: 2004
• 期刊: 電気化学会第71回大会,3B05
• 作者: 武林慶一郎

Synthesis of Zn-doped Y_2O_3:Eu Fine Particle Phosphors by Sol-Gel method

溶胶-凝胶法合成Zn掺杂Y_2O_3:Eu细颗粒荧光粉

• 发表时间: 2003
• 期刊: The 16^<th> Int.Vacuum Microelectronics Conference
• 作者: 三宅亜紀;Anri Nakajima;Anri Nakajima;Hiroko Kominami
• 通讯作者: Hiroko Kominami

リモートプラズマMOCVD法によるZnO薄膜の成長

远程等离子体MOCVD法生长ZnO薄膜

• 发表时间: 2002
• 期刊: 第63回応用物理学会学術講演会,24a-YE-12
• 作者: 三宅亜紀;Anri Nakajima;Anri Nakajima;Hiroko Kominami;葛西哲郎;大原賢治;A.Miyake;T.Aoki;石井紘之;三宅亜紀;石井紘之;A.Miyake;中村 篤志
• 通讯作者: 中村 篤志

Si基板上ZnOエピタキシャル薄膜の形成と励起子発光特性

Si衬底上ZnO外延薄膜的形成及激子发射特性

• 发表时间: 2002
• 期刊: 静岡大学大学院電子科学研究科研究報告 23
• 作者: 三宅亜紀;Anri Nakajima;Anri Nakajima;Hiroko Kominami;葛西哲郎;大原賢治;A.Miyake;T.Aoki;石井紘之;三宅亜紀;石井紘之;A.Miyake;中村 篤志;Anri Nakajima;Y.Shimuzu;Anri Nakajima;Y.Shimizu;Anri Nakajima;清水克美;Quazi D.M.Khosru;三宅亜紀;Quazi D.M.Khosru;三宅亜紀;Anri Nakajima;近藤祐一;Anri Nakajima;三宅亜紀;Anri Nakajima;Anri Nakajima;三宅亜紀
• 通讯作者: 三宅亜紀

Cathodoluminescent properties of rare-earth doped SrGa_2S_4 thinn film phosphors excited with low energy electrons

低能电子激发稀土掺杂SrGa_2S_4薄膜荧光粉的阴极发光特性

• 期刊: Proc.of 2002 Int.Meeting on Information Display (Invited) (Daegu, Korea, 2002)
• 作者: 三宅亜紀;Anri Nakajima;Anri Nakajima;Hiroko Kominami;葛西哲郎;大原賢治;A.Miyake;T.Aoki;石井紘之;三宅亜紀;石井紘之;A.Miyake;中村 篤志;Anri Nakajima;Y.Shimuzu;Anri Nakajima;Y.Shimizu;Anri Nakajima;清水克美;Quazi D.M.Khosru;三宅亜紀;Quazi D.M.Khosru;三宅亜紀;Anri Nakajima;近藤祐一;Anri Nakajima;三宅亜紀;Anri Nakajima;Anri Nakajima;三宅亜紀;Hiroyuki Ishii;Y.Nakanishi;A.Miyake;Y.Nakanishi;A.Miyake;吉元隆史;Y.Kondoh;木寺俊郎;三宅亜紀;石井紘之;清水克美;Anri Nakajima;清水克美;三宅亜紀;Quazi D.M.Khosru;A.Miyake;Anri Nakajima;近藤祐一;Anri Nakajima;三宅亜紀;Anri Nakajima;中西洋一郎;A.M.Wrobel;Anri Nakajima;G.Shimaoka;H.Kuwabara;M.Ogita;Hiroyuki Ishii;A.Nakamura;H.Nakajima;Quazi Deen Mohd Khosru;Y.Kondoh;Anri Nakajima;H.N.Kominami;Quazi D.M.Khosru;H.Nakajima;Anri Nakajima;Y.Nakanishi
• 通讯作者: Y.Nakanishi