Study on Epitaxial Growth of ZnO Thin Films on Si Substrates and Formation of Light Emitting Devices with Near Ultra Violet Laser Emission

本研究旨在利用本研究所发展之新方法，在矽基板上成长氧化锌磊晶薄膜，以形成具有nrsr紫外雷射光发射之发光元件。本研究获得的新结果如下所述。*在Si（111）衬底上外延ZnO薄膜的形成虽然在Si衬底上外延氧化物薄膜一直很困难，但在氧气氛中，通过在Si（111）衬底上外延ZnS薄膜，首次成功地形成了以激子发射为主的外延ZnO薄膜。在<1-x>Si（111）衬底上形成Zn_ Mg_xO固溶体外延薄膜的带隙控制<1-x>以<1-x>ZnS和MgS混合颗粒为蒸发源，通过电子束蒸发Zn_ Mg_xS外延薄膜，成功地在Si衬底上形成了Zn_ Mg_xO固溶体薄膜。证实了激子发射峰能量从ZnO的3.34 eV移动到Zn_ Mg_ 5O的3.45 eV<0.85><0.1>。Si<1-x>（111）衬底上Zn_ Mg_xO外延薄膜的导电控制本研究尝试了不需要高温退火的激光掺杂方法。以<1-x>Al或Ga为掺杂剂，在KrF准分子激光辐照下，可以形成n型ZnO和Zn_ Mg_xO薄膜。可以确认使用Sb的p型形成，但是没有获得高导电性。本研究显示，可预期形成具有近紫外发射的氧化锌发光元件。

This study has been carried out aiming to form light emitting devices with nrsr ultra violet laser emission using ZnO epitaxial thin films grown on Si substrates by new method developed in this study. New results obtained in this study are described below.*Formation of ZnO epitaxial thin films on Si(111) substratesThe epitaxial ZnO thin film which, shows dominantly the exciton emission could be formed successfully for the first time by oxidation of an epitaxial ZnS film on the Si(111) substrate in oxygen atmosphere, although the formation of the epitaxigl thin films of oxides on Si substrates has been very difficult so far.*Band gap control of by formation of Zn_<1-x>Mg_xO solid-solution epitaxial thin films on Si(111) substratesZn_<1-x>Mg_xO solid-soution thin films could be formed successfully on Si substrates by the oxidation of Zn_<1-x>Mg_xS epitaxial films deposited by electron beam evaporation using pellets mixed with ZnS and MgS as an evaporation source. It was confirmed that peak energy of the exciton emission was shifted from 3.34 eV of ZnO to 3.45 eV of Zn_<0.85>Mg_<0.1>5O.*Conduction control of Zn_<1-x>Mg_xO epitaxial thin films on Si(111) SubstratesIn this study, laser doping method which does not need high temperature annealing was tried. The formation of n-type ZnO and Zn_<1-x>Mg_xO thin films could be done using Al or Ga as dopant by the irradiation of KrF excimer laser. The p-type formation using Sb could be confirmed, but high conductivity was not obtained. It was shown in this study that the formation of ZnO light emission device with near ultra-violet emission can be expected.