Study on Epitaxial Growth of ZnO Thin Films on Si Substrates and Formation of Light Emitting Devices with Near Ultra Violet Laser Emission

本研究旨在利用本研究开发的新方法，在硅衬底上生长氧化锌外延薄膜，形成具有NRSR紫外光发射的发光器件。以掺有硫化锌和硫化镁的球团为蒸发源，用电子束蒸发沉积的Zn_xt；1-x&Gt；Mg_xS外延薄膜，在硅衬底上成功地制备出了镁氧化物固体南向薄膜。证实了激子发射的峰值能量从3.34 eV的氧化锌移至3.45 eV的锌的0.85&gt；0.1&gt；50。1-x&gt；mg_xO外延薄膜的导电控制。在KrF准分子激光照射下，以Al或Ga为掺杂剂，可制备出n型氧化锌和锌锌镓镁氧化物薄膜。可以确认使用Sb的p型地层，但没有获得高电导率。研究表明，近紫外光发射的氧化锌发光器件的形成是可以预期的。

This study has been carried out aiming to form light emitting devices with nrsr ultra violet laser emission using ZnO epitaxial thin films grown on Si substrates by new method developed in this study. New results obtained in this study are described below.*Formation of ZnO epitaxial thin films on Si(111) substratesThe epitaxial ZnO thin film which, shows dominantly the exciton emission could be formed successfully for the first time by oxidation of an epitaxial ZnS film on the Si(111) substrate in oxygen atmosphere, although the formation of the epitaxigl thin films of oxides on Si substrates has been very difficult so far.*Band gap control of by formation of Zn_<1-x>Mg_xO solid-solution epitaxial thin films on Si(111) substratesZn_<1-x>Mg_xO solid-soution thin films could be formed successfully on Si substrates by the oxidation of Zn_<1-x>Mg_xS epitaxial films deposited by electron beam evaporation using pellets mixed with ZnS and MgS as an evaporation source. It was confirmed that peak energy of the exciton emission was shifted from 3.34 eV of ZnO to 3.45 eV of Zn_<0.85>Mg_<0.1>5O.*Conduction control of Zn_<1-x>Mg_xO epitaxial thin films on Si(111) SubstratesIn this study, laser doping method which does not need high temperature annealing was tried. The formation of n-type ZnO and Zn_<1-x>Mg_xO thin films could be done using Al or Ga as dopant by the irradiation of KrF excimer laser. The p-type formation using Sb could be confirmed, but high conductivity was not obtained. It was shown in this study that the formation of ZnO light emission device with near ultra-violet emission can be expected.