Study on Epitaxial Growth of ZnO Thin Films on Si Substrates and Formation of Light Emitting Devices with Near Ultra Violet Laser Emission

本研究的目的是利用在Si衬底上生长的ZnO外延薄膜，采用本研究提出的新方法，形成具有nrsr紫外激光发射的发光器件。本研究获得的新结果如下。*在Si（111）衬底上形成ZnO外延薄膜虽然迄今为止在Si（111）衬底上形成氧化物外延薄膜非常困难，但在氧气气氛中，通过氧化ZnS薄膜，首次成功地形成了以激子发射为主的ZnO外延薄膜。*在Si（111）衬底上形成Zn_<1-x>Mg_xO固溶体外延薄膜的带隙控制Zn_<1-x>Mg_xO固溶体外延薄膜以ZnS和mg混合的微球作为蒸发源，通过电子束蒸发沉积Zn_<1-x>Mg_xS外延薄膜，可以在Si衬底上成功形成Zn_<1-x>Mg_xO固溶体薄膜。结果表明，ZnO的激子发射峰值能量由3.34 eV转变为Zn_<0.85>Mg_<0.1> 50o时的3.45 eV。* Si（111）衬底上Zn_<1-x>Mg_xO外延薄膜的导通控制本研究尝试了不需要高温退火的激光掺杂方法。在KrF准分子激光的照射下，Al或Ga作为掺杂剂可制备n型ZnO和Zn_<1-x>Mg_xO薄膜。用Sb可以确定p型地层，但不能获得高导电性。本研究表明，可以预期形成具有近紫外发射的ZnO发光器件。

This study has been carried out aiming to form light emitting devices with nrsr ultra violet laser emission using ZnO epitaxial thin films grown on Si substrates by new method developed in this study. New results obtained in this study are described below.*Formation of ZnO epitaxial thin films on Si(111) substratesThe epitaxial ZnO thin film which, shows dominantly the exciton emission could be formed successfully for the first time by oxidation of an epitaxial ZnS film on the Si(111) substrate in oxygen atmosphere, although the formation of the epitaxigl thin films of oxides on Si substrates has been very difficult so far.*Band gap control of by formation of Zn_<1-x>Mg_xO solid-solution epitaxial thin films on Si(111) substratesZn_<1-x>Mg_xO solid-soution thin films could be formed successfully on Si substrates by the oxidation of Zn_<1-x>Mg_xS epitaxial films deposited by electron beam evaporation using pellets mixed with ZnS and MgS as an evaporation source. It was confirmed that peak energy of the exciton emission was shifted from 3.34 eV of ZnO to 3.45 eV of Zn_<0.85>Mg_<0.1>5O.*Conduction control of Zn_<1-x>Mg_xO epitaxial thin films on Si(111) SubstratesIn this study, laser doping method which does not need high temperature annealing was tried. The formation of n-type ZnO and Zn_<1-x>Mg_xO thin films could be done using Al or Ga as dopant by the irradiation of KrF excimer laser. The p-type formation using Sb could be confirmed, but high conductivity was not obtained. It was shown in this study that the formation of ZnO light emission device with near ultra-violet emission can be expected.