Research for optical mixing with advanced functions

具有先进功能的光学混频研究

• 批准号: 13450142
• 负责人: YAMAMOTO Sadahiko
• 金额: $ 8.58万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450142/
• 关键词: Optical Mixing; Microwave Transistors; HEMT; Microwave Circuits; Side-gating Effect; Sub-carrier Mixing; 近接場光

Recently, optical mixing by high-speed transistors has been attracted much interest for broadband mobile communication systems by combining the optical fiber and the microwave technologies because of their wide bandwidth and inherent isolations between RF signals. Until now, the optical mixing and the photodetection mechanisms of high-speed transistors such as high-electron mobility transistors (HEMTs) or MESFETs have been studied. However, there have not been reported about the change of the polarities of optical responses by light irradiation conditions. In this research, we tried to do the selective optical beam irradiation to the HEMT by use of a microscope and a laser beam and we found its positive and negative optical responses depending on irradiation position. We also studied the application of these optical responses to optically controlled microwave oscillators.A commercially available InGaAs HEMT for low noise amplification in the L- to K-band was mounted on a microstripline … More of 50Ω. An optical beam from a laser diode was focused and injected onto the surface of the HEMT. The spot size of the focused optical beam was about 3μm. The position of the beam spot on the HEMT was monitored by using a microscope and a CCD camera, and adjusted by using an XY-stage.When we set the CW laser beam spot with 50μW from a laser diode of 635nm near the gate electrodes and supplied appropriate DC-bias voltages to the HEVIT, increases of the drain current up to 8mA and the small signal gain up to 20dB were obtained. While we set the beam spot apart from the gate electrodes, decreases of the drain current and the gain were observed clearly. We believe that this negative optical response was due to the capture of carriers in the deep traps, called as the "side-gating effect". We applied these interesting characteristics by light illumination to the optically controlled microwave are oscillators.We designed and fabricated a series feedback microwave oscillator with an oscillating frequency of 11.7GHz by using the HEMT. The HEMT in the oscillator was irradiated by optical pulse beams selectively and the changes of the microwave oscillation were measured. By changing the irradiated position of an optical pulse to the HEMT between the positive and the negative response regions on an appropriate DC-bias condition, the gain of the HEMT was controlled optically and the 11.7GHz microwave oscillation was triggered by the irradiation of a light pulse to the positive response region and stopped by the irradiatinn to the negative response region. By tuning the DC-bias condition, the modulation of the microwave oscillation by the optical beam was also obtained. Less

近年来，光纤与微波技术相结合的高速晶体管混频技术因其带宽宽、射频信号之间固有的隔离性而成为宽带移动通信系统的研究热点。到目前为止，人们已经研究了高电子迁移率晶体管(HEMTs)或MESFET等高速晶体管的光学混频和光检测机制。然而，目前还没有关于光照射条件下光学响应的极性变化的报道。在本研究中，我们尝试利用显微镜和激光对HEMT进行选择性光束照射，发现其正负光学响应随照射位置的不同而不同。我们还研究了这些光学响应在光控微波振荡器中的应用。在微带线…上安装了用于L-TO K波段低噪声放大的商用InGaAsHEMT更多的50Ω。来自激光二极管的光束被聚焦并注入到HEMT的表面。聚焦后的光束光斑尺寸约为3μm，利用显微镜和摄像机监测光束光斑在HEMT上的位置，并通过XY工作台进行调整，将来自635 nm激光二极管的50μW的连续激光光斑设置在栅极附近，并提供适当的直流偏置电压给HEVIT，获得了高达8 mA的漏电流和高达20dB的小信号增益。当束斑与栅极分开时，可以明显地观察到漏电流和增益的减小。我们认为这种负的光学响应是由于深陷阱中的载流子被俘获，被称为“侧门效应”。我们将这些有趣的光照明特性应用于光控微波弧形振荡器。利用HEMT设计并制作了振荡频率为11.7 GHz的串联反馈微波振荡器。用光脉冲光束选择性地照射振荡器中的HEMT，测量了振荡器中微波振荡的变化。在适当的直流偏置条件下，通过改变光脉冲在正、负响应区之间对HEMT的照射位置，光学控制HEMT的增益，光脉冲照射正响应区触发11.7 GHz微波振荡，负响应区照射阻止微波振荡。通过调节直流偏置条件，也得到了光束对微波振荡的调制。较少

项目成果

Takuo Tanaka and Sadahiko Yamamoto: "Optically induced Meandering Mie Particles Driven by the Beat of Coupled Guided Modes Produced in an Multimode Waveguide"Japanese Journal of Applied Physics. Vol.41, No.3. 260-262 (2002)

Takuo Tanaka 和 Sadahiko Yamamoto：“多模波导中产生的耦合导模节拍驱动的光致蜿蜒米氏粒子”《日本应用物理学杂志》。

Atsushi Ishikawa, Hiroshi Murata, Takuo Tanaka, Hidehisa Shiomi, and Sadahiko Yamamoto: "Positive and negative optical responses in high-electron mobility transistors and their applications to optically controlled microwave oscillators"Proceedings of the

Atsushi Ishikawa、Hiroshi Murata、Takuo Tanaka、Hidehisa Shiomi 和 Sadahiko Yamamoto：“高电子迁移率晶体管中的正和负光学响应及其在光控微波振荡器中的应用”论文集

落合 克隆: "分布増幅器を用いたアクティブ集積アンテナのビームステアリング"電子情報通信学会技術報告. 101・1. 39-42 (2001)

Katsutaka Ochiai：“使用分布式放大器的有源集成天线的波束控制”IEICE 101・1（2001）。

Hiroshi Murata, Taiji Doi, Tetsuro Kobayashi, and Sadahiko Yamamoto: "Novel guided-wave single-sideband electrooptic modulators by using periodically domain-inverted structure"Proceedings of the Conference on Lasers and Electro-Optics 2002 (CLEO2002), CTu

Hiroshi Murata、Taiji Doi、Tetsuro Kobayashi 和 Sadahiko Yamamoto：“利用周期性域反转结构的新型导波单边带电光调制器”2002 年激光和电光会议论文集 (CLEO2002)，CTu

Hiroshi Murata: "Novel guided-wave single-sideband electrooptic modulators by using periodically domain-inverted structure"Proceedings of the Conference on Lasers and Electro-Optics 2002 (CLEO2002). (To be published). (2002)

Hiroshi Murata：“利用周期性域反转结构的新型导波单边带电光调制器”2002 年激光和电光会议论文集 (CLEO2002)。