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Holographic recording using azo-polymers

使用偶氮聚合物的全息记录

基本信息

批准号：
13555009
负责人：
YATAGAI Toyohiko
金额：
$ 7.94万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

项目摘要

Polymeric materials are the most promising organic materials for electro-optic, and memory devices. In the past several years, direct fabrication of relief structures in azo-polymers has been reported. This method is a one step fabrication technique. A surface relief structure is fabricated by means of irradiation of interference fringes. We propose a new reversible surface relief hologram using photomduced surface deformation on azo-polymer films. The diffraction efficiency of the hologram is dramatically increased by corona charging, and it is controlled by applied voltage of the corona charging.The side-chain azo-polymer, poly orange tom-1 isophoronediisocyanate, is used in this study. Figure 1 shows the chemical structure the material. The glass transition temperature T_g is 136℃. The absorption peak and the cut-off wavelength of the dye are 440 nm and 560 nm, respectively. This polymer is dissolved in cyclohexanone. Samples of l〜5μm thickness are prepared by spin-coating on a slide glass plate. The refractive index of the film is measured as 1.65 at a wavelength of 633 nm by the m-line technique. The surface relief grating is fabricated by the irradiation of two-beam interference fringes.The mechanism of increasing the diffraction efficiency and the relief depth of a surface relief structure by corona charging at temperatures near or above its T_g is not clearly understood, but we consider that the relief depth increases as a result of the Coulomb force exerted by electric charge ; therefore the diffraction efficiency is increased. In the corona charging process, the voltage was applied at a temperature near T_g and the polymer film was heated to the corona charging temperature with the voltage applied, because the surface relief structure is thermally erased above T_g without the applied voltage.

聚合物材料是最有前途的有机电光材料和存储器件。在过去的几年里，直接在偶氮聚合物中制造浮雕结构已经被报道。这种方法是一步法制作技术。通过对干涉条纹的照射，制作了表面浮雕结构。我们提出了一种新的利用偶氮聚合物薄膜上的光诱导表面变形的可逆表面浮雕全息图。通过电晕充电可以显著提高全息图的衍射效率，并且它受电晕充电的外加电压的控制。图1显示了该材料的化学结构。玻璃化转变温度T_g为136℃。染料的吸收峰和截止波长分别为440 nm和560 nm。这种聚合物溶解在环己酮中。用旋涂技术在载玻片上制备了厚度为L~5μm的样品。用m线技术测得薄膜在波长633 nm处的折射率为1.65。表面浮雕光栅是用双光束干涉条纹辐照制作的，在Tg附近或以上的温度下，通过电晕充电提高表面浮雕结构的衍射效率和浮雕深度的机理尚不清楚，但我们认为，由于电荷施加库仑力，浮雕深度增加，从而提高了衍射效率。在电晕充电过程中，在T_g附近施加电压，并在施加电压的情况下将聚合物薄膜加热到电晕充电温度，因为表面浮雕结构在T_g以上被热擦除，而不需要施加电压。