HONEYCOMB STACKING OF ZN3-CLUSTER ON SI(!!!)-7x7 SURFACE

锌原子沉积在SiI(111)-7x7表面上，在SiI(111)-7x7表面的每个断层上形成ZN_&lt；3-&gt；团簇。在由ZN_1；3-GT；柱组成的超蜂窝结构中，更多的ZN沉积导致了2^&lt；ND&gt；和3^&lt；RD&gt；；层的逐层生长。扫描隧道显微镜(STM)分析表明，ZN_3COLUMNI的超导层由单层半导电层变为三层半导体层。第四层无蜂窝结构，形成了金属锌岛。在本研究中，我们发现了表面硅原子与醇反应形成的Si(111)-7x7表面的图样。当硅烷暴露在CH_3OH中时，CH_3OH分子通过生成SiI-OCH_3和SI-H，在SI-ADATOM和SI-RESTATOM对的位置上发生离解。因此，当(111)-7x7SURFACES被CH3OH吸附饱和时，每一断层和半断层中仍保留三个完整的SI-吸附原子。网点中沉积的网状结构是通过在完整的硅原子上成核而形成的。

Zn ATOMS DEPOSITEDON A SI (111)-7x7 SURFACE FORM ZN_<3->CLUSTER IN EVERY FAULTED AND UNFAULTED HALVESOF THE SIi (111)-7x7 SURFACE. MORE DEPOSITION OF ZN CONDUCTED THE LAYER-BY-LAYER GROWS OF THE 2^<ND> AND 3^<RD>LAYERS IN SUPURA HONEYCOMB STRUCTURE COMPOSED OF ZN_<3->COLUMN. SCANNING TUNNELING MICROSCOPY (STM) SUGGESTED THAT THE SUPRAHONEYCOMB LAYER OF ZN_3 COLUMNIS SEMI-CONDUCTIVE FROM ONE-MONOLAER TO THREE LAYERS. NO HONEYCOMB STUCKING OCCURRED IN THE 4^<th> LAYER AND METALLIC Zn-ISLANDS WERE FORMED.IN THISESEARCH, WE FOUND THE PATTERNING OF SI (111)-7x7SURFACE BY THE REACTION OF SURFACE SI=ATOMS WITH ALCOHOLS. WHEN A SI111) SURFACEWAS EXPOSED TO CH_3OH, CH3OH MOLECULE UNDERGOES DISSICIATION ON A PAIR SITE OF SI-ADATOM AND SI-RESTATOM PAIR BY FORMING SIi-OCH_3 and SI-H. THEREFORE, WHEN THE (111)-7x7 SURFACEIS SATURATED BY THE ADSORPTION OF CH3OH, THREE INTACT SI-ADATOMS ARE REMAINED IN EVERY FAULTED AND UNFAULTED HALVES. THE PATTERNING OF DEPOSITTED NETALS IN DOTS OCCURS BY NUCLEATION AT THE INTACT SI-ADATOMS.