HONEYCOMB STACKING OF ZN3-CLUSTER ON SI(!!!)-7x7 SURFACE

Zn原子在Si（111）-7 × 7<3->表面上的沉积在Si（111）-7 × 7表面的每半断层和每半无断层处都形成Zn_2团簇。在<ND><RD>由Zn_2柱组成的SUPURA蜂窝结构中，Zn的沉积量越多，第2层和第3层<3->的生长越容易。扫描隧道显微镜（STM）表明，Zn_3柱的超蜂窝层由单层半导体变为三层半导体。在第四层中没有发生蜂窝状堆积<th>，形成了金属锌岛.在这一过程中，我们发现了Si（111）-7 × 7表面的图案化是由表面Si=原子与醇的反应引起的. CH_3OH分子在Si-原子对和Si-还原原子对上发生解离，生成Sii-OCH_3和Si-H。因此，当（111）-7 × 7表面被CH_3OH吸附饱和时，在每个断层和非断层半中保留三个完整的Si-原子。点中沉积网络的图案化是由完整Si原子的成核作用引起的。

Zn ATOMS DEPOSITEDON A SI (111)-7x7 SURFACE FORM ZN_<3->CLUSTER IN EVERY FAULTED AND UNFAULTED HALVESOF THE SIi (111)-7x7 SURFACE. MORE DEPOSITION OF ZN CONDUCTED THE LAYER-BY-LAYER GROWS OF THE 2^<ND> AND 3^<RD>LAYERS IN SUPURA HONEYCOMB STRUCTURE COMPOSED OF ZN_<3->COLUMN. SCANNING TUNNELING MICROSCOPY (STM) SUGGESTED THAT THE SUPRAHONEYCOMB LAYER OF ZN_3 COLUMNIS SEMI-CONDUCTIVE FROM ONE-MONOLAER TO THREE LAYERS. NO HONEYCOMB STUCKING OCCURRED IN THE 4^<th> LAYER AND METALLIC Zn-ISLANDS WERE FORMED.IN THISESEARCH, WE FOUND THE PATTERNING OF SI (111)-7x7SURFACE BY THE REACTION OF SURFACE SI=ATOMS WITH ALCOHOLS. WHEN A SI111) SURFACEWAS EXPOSED TO CH_3OH, CH3OH MOLECULE UNDERGOES DISSICIATION ON A PAIR SITE OF SI-ADATOM AND SI-RESTATOM PAIR BY FORMING SIi-OCH_3 and SI-H. THEREFORE, WHEN THE (111)-7x7 SURFACEIS SATURATED BY THE ADSORPTION OF CH3OH, THREE INTACT SI-ADATOMS ARE REMAINED IN EVERY FAULTED AND UNFAULTED HALVES. THE PATTERNING OF DEPOSITTED NETALS IN DOTS OCCURS BY NUCLEATION AT THE INTACT SI-ADATOMS.