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Improvement on tandem-type ultra-high-density multi/demultiplexer performance for use in future super-dense photonic network

串联型超高密度多路/解复用器性能的改进，用于未来超密集光子网络

基本信息

批准号：
15560028
负责人：
TAKADA Kazumasa
金额：
$ 2.43万
依托单位：
Gunma University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

项目摘要

Our aim was to reduce the crosstalk of primary and seconday AWGs used in a tandem-type ultra-high density multi/demultiplexer by means of photoinduced refractive index change under UV laser light through metal masks.1.Metal mask fabrication process : We proposed a metal mask fabrication process employing an inkjet printer to draw the mask pattern and a copy machine to fix it on a resist sheet. The advantage of the method is a short fabrication process for around 10 minutes and a lower cost.2.Phase error measurement of primary AWG : We found that an interferogram obtained from an AWG with optical low coherence interferometry is decomposed when the employed light source covers only two narrow spectral regions at two successive peaks in its AWG transmission spectrum. This was utilized successfully for measuring the phase error distribution of a 1-THz-spaced primary AWG, where the lights from 1.3 and 1.5 μm LEDs were combined to cover the spectrum with two peaks. We fabricate the metal mask for the AWG from the phase error data and succeeded in reducing the sidelobe in the spectrum by 7 dB.3.Phase error measurement of secondary AWGs : We have succeeded in measuring the phase error distributions of narrow-channel spacing AWGs with an accuracy of 0.05 rad in the frequency domain. This was achieved by sweeping the laser frequency at 50nm/s and by removing the laser intensity noise with a balanced detection scheme.4.Reduction of an ultra-high density tandem multi/demultiplexer : We fabricated metal masks for the secondary AWGs with the above fabrication process and succeeded in reducing the sidelobe crosstalk to -39 dB around their central arrayed waveguides. By combing them with the phase-compensated primary AWG, the accumulated crosstalk of the 1000-channel multi/demultiplexer was reduced by 5 dB as compared with the system previously reported.

我们的目标是通过金属掩模在紫外激光下发生光致折射率变化，从而减少串联型超高密度多路/解复用器中使用的初级和次级AWG的串扰。 1.金属掩模制造工艺：我们提出了一种金属掩模制造工艺，采用喷墨打印机绘制掩模图案，并使用复印机将其固定在抗蚀剂片上。该方法的优点是制作过程短，大约10分钟，成本较低。2.初级AWG的相位误差测量：我们发现，当所使用的光源仅覆盖AWG传输光谱中两个连续峰值处的两个窄光谱区域时，使用光学低相干干涉测量法的AWG获得的干涉图会被分解。它成功地用于测量 1-THz 间隔主 AWG 的相位误差分布，其中来自 1.3 和 1.5 μm LED 的光组合在一起以覆盖具有两个峰值的光谱。我们根据相位误差数据制作了AWG的金属掩模，并成功地将频谱中的旁瓣降低了7 dB。3.二次AWG的相位误差测量：我们成功地测量了窄通道间隔AWG的相位误差分布，频域精度为0.05 rad。这是通过以 50nm/s 扫描激光频率并通过平衡检测方案消除激光强度噪声来实现的。4. 超高密度串联多路/解复用器的减少：我们采用上述制造工艺为次级 AWG 制造了金属掩模，并成功地将其中心阵列波导周围的旁瓣串扰降低至 -39dB。通过将它们与相位补偿初级 AWG 相结合，1000 通道多路/解复用器的累积串扰与之前报道的系统相比减少了 5 dB。