Studies on electron beam devices using a micro emitter

使用微型发射器的电子束装置的研究

• 批准号: 15560288
• 负责人: SATO Nobuyuki
• 金额: $ 1.98万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560288/
• 关键词: micro emitter; carbon nano tube; millimeter wave; sub-millimeter wave; peniotron; Smith-Purcell; ペニオトロン

Micro emitters using carbon nanotube were fabricated and tested for application to electron beam devices in millimeter and sub-millimeter region. First of all we fabricated an emitter with ring emitting area. The electron emission from the emitter was limited up to 100nA due to ununiformity of cnt filaments. The second emitter was fabricated by using well controlled uniform cnt filamnets. The emission current up to 60uA was obtained, but dissipative ununiform emission patterns were observed in the emission. The cause of unnecessary emission was presumed that the concentration of the electric field and ununiformity of the ant filaments in the edge of the emitting area. The method of suppressing the unnecessary emission was examined.

研制了碳纳米管微电子发射极，并进行了应用于毫米和亚毫米电子束器件的测试。首先，我们制作了一个具有环形发射区域的发射器。由于碳纳米管丝的不均匀性，从发射体的电子发射被限制为高达100nA。第二个发射极是用可控均匀碳纳米管网制作的。发射电流可达60 μ A，但发射模式为耗散不均匀发射。分析认为，产生不必要发射的原因是发射区边缘电场的集中和蚁丝的不均匀性。研究了抑制不必要发射的方法。

项目成果

Microelectron field emitter array with focus lenses for multielectron beam lithography based on insulator wafer

基于绝缘体晶圆的多电子束光刻用聚焦透镜微电子场发射器阵列

• 发表时间: 2004
• 期刊: J.Vac.Sci.Tech. B22
• 作者: P.N.Minh;T.Oho;N.Sato et al.
• 通讯作者: N.Sato et al.