Generation Mechanism for 3^<rd> Order Inter-Modulation Distortion in Harmonic Frequency Controlled Ultra-High Efficiency Amplifier
Generation Mechanism for 3^<rd> Order Inter-Modulation Distortion in Harmonic Frequency Controlled Ultra-High Efficiency Amplifier
批准号:
15560292
负责人:
HONJO Kazuhiko
金额:
$2.05万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004
中文摘要
提出了f类高效微波放大器的电路合成方法,其中在设计中考虑了高达7^< >阶的高谐波频率。在f类微波放大器中,晶体管的负载阻抗在偶次谐波频率下为零,在奇次谐波频率下为无穷大。在异质结双极晶体管(HBT)中,由于基极-集电极电容等输出寄生电容的介入,使得晶体管的开路状态难以保持。此外,f类负载电路的电路损耗也会降低功率效率。在本项目中,利用ISE-TCAD二维器件模拟器,导出了f类放大器工作时HBT集电极的最佳掺杂密度。并介绍了tan δ=0.0023的低损耗树脂电路板,设计并制作了考虑7^< >次谐波频率的F类负载电路。制作的InGaP/GaAs HBT f类放大器电路工作在1.9 GHz,其PAE(功率附加效率)测量值为74.2%,集电极效率测量值为76.6%。在去嵌入电路损耗的情况下,PAE为78.7%,集电极效率达到81.2%。这些值是工作在2ghz左右的微波放大器的基准结果。在3^<rd>阶调制间失真的观点中,不仅要考虑基频,还要考虑谐波和次谐波频率,因为这些频率之间的频率混频现象对失真产生起着重要的作用。在FET f类放大器中,由于消除了通过偶次高谐波频率产生的机制,偶次高谐波频率的短路条件带来的畸变较小。但在HBT类f放大器中,由于基极对集电极电容较大,畸变产生机理较为复杂。指出了3^<rd>阶互调失真信号存在多矢量间的自补偿。从次谐波频率终止条件的角度出发,发现在偏置供电网络中短路滤波电路可以有效地降低双频和W-CDMA信号的畸变。少
英文摘要
Circuit synthesis methods for class-F high efficiency microwave amplifiers have been proposed, where up to 7^<th> order higher harmonic frequencies are taken into consideration in the design. In the class-F microwave amplifiers, load impedances for a transistor are zero at even order harmonic frequencies and those are infinity at odd order harmonic frequencies. Because of intervention of output parasitic capacitance such as base-collector capacitance in heterojunction bipolar transistors(HBT), the open circuit condition for the transistor is difficult to be retained. In addition, circuit losses in class-F load circuit degrade power efficiency also. In this project, using the ISE-TCAD two dimentional device simulator, optimum doping density for HBT collector has been derived for the class-F amplifier operation. And also introducing low loss resin circuit board with tan δ=0.0023, class F load circuit considering up to 7^<th> order harmonic frequencies were designed and fabricated in a di … More stributed circuit form. Fabricated InGaP/GaAs HBT class-F amplifier circuits operating at 1.9 GHz delivered 74.2% measured PAE(Power Added Efficiency) and 76.6% measured collector efficiency. In the case that circuit loss is de-embedded, the PAE is 78.7% and the collector efficiency reached 81.2%. These values are bench mark results in microwave amplifiers operating around 2 GHz.In a 3^<rd> order inter modulation distortion view point, not only a fundamental frequency, but also harmonic and sub-harmonic frequencies should be taken into account, since frequency mixing phenomena among these frequencies take important rolls for distortion generations. In FET class-F amplifier, short-circuited conditions for even order higher harmonic frequencies bring about less distortions, since generation mechanism via even order higher harmonic frequencies are deleted. However in the HBT class-F amplifiers, because of existence of large base to collector capacitance, the distortion generation mechanism are more complicated. It has been pointed out that self compensation among multi vectors for 3^<rd> order inter-modulation distortion signals occurs. In a view point of sub-harmonic frequency termination conditions, short circuited filtering circuits at bias supplying networks are found to be effective to reduce the distortions for both two tones and W-CDMA signals. Less
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Wireless Devices and Circuit Technology Considering High Power Efficiency, Low Distortion, and Ultra Wideband
考虑高功率效率、低失真和超宽带的无线设备和电路技术
DOI:
--
发表时间:
2004
期刊:
2004 Microwave and Millimeterwave Workshop (Seoul) <2004>[1]
影响因子:
--
作者:
[K.Furuya, et al., 淺沼 昭彦, Kazuhiko Honjo]
通讯作者:
Kazuhiko Honjo
相川清志, 本城和彦: "完全集中定数化F級増幅回路の提案"電子情報通信学会 技術研究報告. MW2003-245. 7-14 (2004)
Kiyoshi Aikawa、Kazuhiko Honjo:“全集总 F 级放大器电路的提议” IEICE 技术研究报告 MW2003-245 (2004)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Backward Graded Collector Structure to Improve Inter-Modulation Distortion of HBTs
用于改善 HBT 互调失真的后向分级集电极结构
DOI:
--
发表时间:
2005
期刊:
IEICE 2005 Conv. C-10-9
影响因子:
--
作者:
[C.Zheng, R.Ishikawa, K.Honjo]
通讯作者:
K.Honjo
Electrical approaches for JISSO technology
JISSO 技术的电气方法
DOI:
--
发表时间:
2004
期刊:
IEICE Journal
影响因子:
--
作者:
[Y.Ito, K.Honjo, M.Aikawa]
通讯作者:
M.Aikawa
関正人, 小林由紀子, 石井寛子, 本城和彦: "1.9GHz帯F級HBT増幅回路の実験的検討"電子情報通信学会2004年総合全国大会. (発表予定). (2004)
Masato Seki、Yukiko Kobayashi、Hiroko Ishii、Kazuhiko Honjo:“1.9GHz 频段 F 级 HBT 放大器电路的实验研究”IEICE 2004 年全国会议(预定报告)。
DOI:
--
发表时间:
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影响因子:
--
作者:
[]
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共 27 条
Microwave Modeling of Single Electron Transistor
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批准号:23560389
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$3.24万
-
财政年份:2011
-
负责人:HONJO Kazuhiko
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依托单位:
Improvements in group delay characteristics based on the w-analysis of electro-magnetic waves and semianductonr devices
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批准号:18560329
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.53万
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财政年份:2006
-
负责人:HONJO Kazuhiko
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依托单位: