Microwave Modeling of Single Electron Transistor

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A novel approach for investigating the single-electron transistors (SETs) power gain functionality which is one of the most important features of active devices related with operation speed performance is proposed. Moreover, an evaluating method is also introduced to improve the SET power gain due to the influence of junction thickness. It is found that source junction thickness is the key factor affecting the power gain. This important finding is illustrated by taking into account the physical parameters of sample fabricated SET. According to proposed model, power gain can be improved by ramarkable amount of 39dB at frequencies up to THz regime by reducing 1.25nm in source junction thickness.