Microwave Modeling of Single Electron Transistor

单电子晶体管的微波建模

• 批准号: 23560389
• 负责人: HONJO Kazuhiko
• 金额: $ 3.24万
• 依托单位: The University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560389/
• 关键词: ナノ電子デバイス; マイクロ波; 電力利得; 単電子トランジスタ; テラヘルツ; ＨＥＭＴ; ＨＢＴ; HEMT; HBT; T-CAD; トランスファーレジスタ

A novel approach for investigating the single-electron transistors (SETs) power gain functionality which is one of the most important features of active devices related with operation speed performance is proposed. Moreover, an evaluating method is also introduced to improve the SET power gain due to the influence of junction thickness. It is found that source junction thickness is the key factor affecting the power gain. This important finding is illustrated by taking into account the physical parameters of sample fabricated SET. According to proposed model, power gain can be improved by ramarkable amount of 39dB at frequencies up to THz regime by reducing 1.25nm in source junction thickness.

提出了一种研究单电子晶体管（SET）功率增益功能的新方法，这是与运行速度性能相关的有源器件最重要的特征之一。此外，还引入了一种评估方法来改善由于结厚度的影响而导致的SET功率增益。研究发现源结厚度是影响功率增益的关键因素。通过考虑样品制造的 SET 的物理参数来说明这一重要发现。根据提出的模型，通过减少 1.25nm 源结厚度，在高达 THz 的频率下，功率增益可显着提高 39dB。

项目成果

Power Gain Inprovement of Single Electron Transistor

单电子晶体管功率增益的改进

• 发表时间: 2014
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: D.H.Manh;K. Honjo
• 通讯作者: K. Honjo

Power Gain Characteristic of Single-Electron Transistors (SETs)

单电子晶体管 (SET) 的功率增益特性

• 发表时间: 2013
• 作者: Duy Manh Luong;Kazuhiko Honjo
• 通讯作者: Kazuhiko Honjo

A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs

由独立偏置的 InGaP/GaAs HBT 组成的高效低失真共源共栅功率放大器

• 发表时间: 2014
• 期刊: IEICE TRANS. ELECTRON
• 作者: Yuku TAKAGI;Yoichiro TAKAYAMA;Ryo ISHIKAWA and Kazuhiko HONJO
• 通讯作者: Ryo ISHIKAWA and Kazuhiko HONJO

A High Effi -cieny Low Distortion Cascode Power Amp -lifier Consisting of Independently Biased InGaP/GaAs HBT

一种由独立偏置InGaP/GaAs HBT组成的高效低失真共源共栅功率放大器

• 发表时间: 2014
• 期刊: IEICE Trans.Electron
• 作者: Yuki Takagi;Yoichiro Takayama;Ryo Ishikawa;Kazuhiko Honjo
• 通讯作者: Kazuhiko Honjo

A predistortion diode linearizer technique with automatic average power bias control for a class-F GaN HEMT power amplifier

用于 F 类 GaN HEMT 功率放大器的具有自动平均功率偏置控制的预失真二极管线性化技术

• 发表时间: 2011
• 期刊: IEICE Trans. Electronics
• 作者: A.Ando;Y.Takayama;T.Yoshida;R.Ishikawa,.K.Honjo
• 通讯作者: R.Ishikawa,.K.Honjo