Type-II Based THz Emitters (B12*)

基于 II 型的太赫兹发射器 (B12*)

• 批准号: 466284140
• 金额: --
• 依托单位: Arbeitsgruppe Experimentelle Halbleiterphysik
• 依托单位国家: 德国
• 项目类别: Collaborative Research Centres
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/466284140?language=en
• 关键词: Type; II; Based; THz; Emitters

The project aims at the development of laser driven, pulsed THz emitters based on semiconductor heterostructures as well as the exploration of the underlying physical mechanisms. We will optimise the type-II structures regarding signal amplitude, bandwidth, and operation frequency by changing structural parameters like barrier and well width as well as materials composition. This new approach has the potential to lead to emitters which provide higher THz fields than traditional surface emitters. Furthermore, we will investigate, if an applied magnetic field will increase the emitted THz amplitude even further.

该项目旨在开发基于半导体异质结构的激光驱动脉冲太赫兹发射器，并探索其潜在的物理机制。我们将通过改变屏障和井宽等结构参数以及材料组成来优化ii型结构，包括信号幅度、带宽和工作频率。这种新方法有可能导致发射器提供比传统表面发射器更高的太赫兹场。此外，我们将研究外加磁场是否会进一步增加发射的太赫兹幅度。