Type-II Based THz Emitters (B12*)

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The project aims at the development of laser driven, pulsed THz emitters based on semiconductor heterostructures as well as the exploration of the underlying physical mechanisms. We will optimise the type-II structures regarding signal amplitude, bandwidth, and operation frequency by changing structural parameters like barrier and well width as well as materials composition. This new approach has the potential to lead to emitters which provide higher THz fields than traditional surface emitters. Furthermore, we will investigate, if an applied magnetic field will increase the emitted THz amplitude even further.