Very longwave infrared detectors based on Type II superlattice.

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Very longwave infrared detectors based on Type II superlattice. In this work, very thin layers of semiconductors such as InAs, InAsSb or InGaAsSb will be designed to engineer photodiodes that can achieve high sensitivity in the very longwave infrared wavelengths. Simulations of superlattice will be carried out to provide designs that will be grown, fabricated and tested. Data will be analysed in terms of photoresponse and noise to improve the design of the photodiodes.