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Silicon 2.0: The nature of grown-in defects in very high-purity silicon

Silicon 2.0: The nature of grown-in defects in very high-purity silicon
硅 2.0:极高纯度硅中生长缺陷的本质
批准号:
DE160101368
负责人:
Dr Fiacre Rougieux
金额:
$26.28万
依托单位国家:
澳大利亚
项目类别:
Discovery Early Career Researcher Award
财政年份:
2016
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2016-03-08 至 2019-12-07

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英文摘要
This project aims to produce technologies to maximise the electronic quality of silicon and mitigate the negative impacts of defects on high-efficiency solar cells. The intended outcomes are the development of novel solar cell processes to produce defect-free silicon and new characterisation techniques to image defects in silicon wafers. This would allow high efficiency solar cells to overcome their current limits and unlock the potential of current processes to produce solar cells with efficiency above 26 per cent, providing more efficient and affordable solar electricity.
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  • 项目类别:
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