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Synthesis of High Performance Thin Film Magnet on Semiconductor Substrate for the Micromagnetic Devices

用于微磁器件的半导体基底上高性能薄膜磁体的合成

基本信息

批准号：
16510098
负责人：
ADACHI Nobuyasu
金额：
$ 2.5万
依托单位：
Nagoya Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16510098/
关键词：
rare earth thin film magnet high coercivity MEMS RF sputtering post-annealing Si substrate single magnetic domain c-axis preferential orientation 結晶配向薄膜磁石希土類マイクロマシン熱処理結晶化シリコン保持力ハード磁性

项目摘要

We successfully synthesized thin films of Nd-Fe-B rare earth magnets with coercive force of about 15 kOe on Si(111) single crystal substrate by RF sputtering and post annealing technique. Preparation of thin film magnet on semiconductor substrate has great advantage for the practical application of MEMS devices. We inserted the buffer layer of MoSi_2 between the substrate and Nd-Fe-B layer with approximately 2 micron thickness. We consider that the buffer layer has a roll to depress the thermal strain. The Ti top layer was coated for the protect from oxidation of the Nd-Fe-B layer. The as-deposited films shows the amorphous phase. After annealing at 650 degreeC by infrared radiation in vacuum atmosphere, the Nd_2Fe_14B phase was well crystallized in the film. The XRD pattern showed (00l) diffraction and the strong (410) peak was also observed. The magnetic hysteresis showed the isotropic in the magnetic field parallel and perpendicular to the film plane. This result come from the random orientation of c-axis. The XRD analysis is agreement with the insufficient c-axis orientations. However, the coercive force of the film shoed the large value of aboout 15 kOe. The SEM and MFM observation of the film suggested the single magnetic domain structure with 200-350 nm diameter was realized. Although the realization of the c-axis preferential orientation of the film remains a subject matter to overcome, the high coercivity of the film is good property for the concrete application of the micromotor or microactuator in the MEMS devices.

采用射频溅射和后退火技术，在Si（111）单晶衬底上成功地制备了矫顽力约为15 kOe的Nd-Fe-B稀土永磁薄膜。在半导体衬底上制备薄膜磁体对于MEMS器件的实际应用具有很大的优势。我们在衬底和Nd-Fe-B层之间插入了大约2微米厚的MoSi_2缓冲层。我们认为，缓冲层有一个滚动，以降低热应变。为了防止Nd-Fe-B层的氧化，在表层镀Ti。沉积态薄膜为非晶相。经650 ℃真空红外辐射退火后，薄膜中Nd_2Fe_（14）B相结晶良好。XRD图谱显示出（001）衍射，并且还观察到强的（410）峰。在平行于和垂直于薄膜平面的磁场中，磁滞回线表现为各向同性。这一结果来源于c轴的随机取向。XRD分析与不足的c轴取向一致。然而，薄膜的矫顽力显示出约15 kOe的大值。薄膜的SEM和MFM观察表明，薄膜实现了直径为200-350 nm的单磁畴结构。虽然实现薄膜的c轴择优取向仍然是一个有待克服的课题，但薄膜的高介电常数对于MEMS器件中微电机或微致动器的具体应用是良好的性能。