权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Beta-NMR study on impurity diffusion in semiconductors.

半导体中杂质扩散的 Beta-NMR 研究。

基本信息

批准号：
16540283
负责人：
IZUMIKAWA Takuji
金额：
$ 1.47万
依托单位：
Niigata University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16540283/
关键词：
Semiconductor Lattice Defect Atomic Jump NMR Unstable Nuclei

项目摘要

The beta-NMR measurements of the boron impurity in germanium were performed. The obtained results are as follows. Three resonances were found : a sharp resonance and a broad one around the Larmor frequency, a resonance at vqSplit=190 kHz. In the same manner as silicon, these three resonances were expected to correspond to the substitutional site (Bs), the site which shows polycrystal pattern (Bx), and the <111> axial symmetrical site (Bns), respectively. While the fraction of Bns is almost constant of 30 % below the temperature of 250 K, above 300 K the resonance disappears. This disappearance is also similar with the case of silicon, i.e., the spin-lattice relaxation should be caused by the fluctuation of the internal field due to the atomic jumps. The temperature dependence of the Bs+Bx was slightly different to the silicon case. Around the room temperature it decreases and makes a depression. One explanation for it may be that the chance for the interaction of Bs or Bx with the vacancy created by the implantation increases with the temperature, and it follows destruction of the polarization.In order to confirm the model of the atomic jump, the temperature dependence of the fractions of each site were measured under the different external magnetic fields. As a result, the temperature at which the NMR signal disappears agreed with the expected value by our model. This supports the validity of the atomic jump model.The nitrogen impurity in the compound semiconductor TiO2 and ZnO was also investigated. The electric field gradient at the nitrogen impurity in ZnO was measured. The nitrogen impurity in TiO2 locates at oxygen substitutional site and interstitial lattice site. While the substitutional nitrogen seems to be immobile, the defect around the substitutional nitrogen and the interstitial nitrogen seems to be mobile thermally.

对锗中的硼杂质进行了β-NMR测量。所得结果如下。三个共振被发现：一个尖锐的共振和一个广泛的拉莫尔频率周围，在vqSplit=190 kHz的共振。以与硅相同的方式，预期这三个共振分别对应于替代位置（Bs）、显示多晶图案的位置（Bx）和<111>轴对称位置（Bns）。当温度低于250 K时，Bns的分数几乎恒定为30%，而高于300 K时，共振消失。这种消失也类似于硅的情况，即，自旋-晶格弛豫应该是由原子跳跃引起的内场涨落引起的。Bs+Bx的温度依赖性与硅的情况略有不同。在室温附近，它会降低并产生凹陷。一种可能的解释是，随着温度的升高，注入空位与Bs或Bx相互作用的机会增加，并且伴随着极化的破坏.为了证实原子跳跃模型，在不同的外磁场下测量了各位置分数的温度依赖性.结果表明，NMR信号消失的温度与我们模型的预期值一致。本文还对化合物半导体TiO_2和ZnO中的氮杂质进行了研究。测量了ZnO中氮杂质处的电场梯度。TiO 2中的氮杂质位于氧的替位和间隙晶格位。虽然置换氮似乎是不移动的，但置换氮和间隙氮周围的缺陷似乎是热移动的。

项目成果

期刊论文数量（29）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

ZnO中12Nの超微細相互作用

ZnO 中 12N 的超精细相互作用

DOI：
发表时间：
2006
期刊：
原子核プローブ生成とそれを用いた物性研究専門研究会報告書 KURRI-KR6
影响因子：
0
作者：
K.Hino;N.Toshima;高崎寛;T.Izumikawa;M.Mihara;泉川卓司;三原基嗣
通讯作者：
三原基嗣

Beta-NMR study on electronic structure of 12N and 12B impurities in metal.

金属中12N和12B杂质电子结构的β-NMR研究。

DOI：
发表时间：
2005
期刊：
Master thesis, Osaka University
影响因子：
0
作者：
K.Hino;N.Toshima;高崎寛;T.Izumikawa;M.Mihara;泉川卓司;三原基嗣;篠島大亮;T.Izumikawa;M.Mihara;D.Shimojima;T.Izumikawa;泉川卓司;M.Mihara;三原基嗣;神代真一;S.Kumashiro
通讯作者：
S.Kumashiro

Microscopic observation of impurities in TiO2 using radioactive nuclear probes.

使用放射性核探针显微观察 TiO2 中的杂质。