Application to Nanotube Making Process of Neutral Loop Discharge Plasma Technique

近年来，随着现代半导体制造工艺中最小的0.1μm的超细加工技术在半导体工艺中的线宽，晶片的大直径制造得到了迅速的推进。然后，需要等离子体源，通过它可以进行大面积的均匀工艺。然后，提出了中性回路放电(NLD)等离子体。由于NLD等离子体可以动态控制过去等离子体中不可能的等离子体，因此可以进行高效的工艺。然而，目前的状态是从结构上仅限于刻蚀领域。我们将NLD等离子体这一独特的概念应用到碳纳米管的制备中，旨在将NLD等离子体应用到一个新的领域。在实际实验中，我们利用直流放电、电感耦合等离子体和NLD等离子体的等离子体增强化学气相沉积(PECVD)法进行了碳纳米管的制备实验。结果表明，用NLD等离子体制备的碳纳米管最薄。此外，其他实验方法也能在低压功率下产生碳纳米管。

Recently, the big diameter making of the wafer is rapidly advanced with the ultrafine processing technology of 0.1μm in the minimum in recent semiconductor manufacturing process line width in the process of the semiconductor. Then, the plasma, source by which a uniform process in a large area can be done is requested. Then, the NLD (Neutral Loop Discharge) plasma was proposed. Because the NLD plasma can dynamically control impossible plasma in past plasma, a highly effective process can be done. However, it is a current state of being limited from the structure only to the etching field now. We have aimed to pioneer the NLD plasma to a new field by applying a peculiar concept of the NLD plasma to the CNT (Carbon Nanotubes) making.In the actual experiment, we did the CNT making experiment by the Plasma Enhanced Chemical Vapor Deposition (PECVD) law which uses the DC electrical discharge, ICP and NLD plasma. As a result, CNT made by the experiment which used the NLD plasma became the thinnest. Moreover, CNT was able to be generated from other experiment methods with low-pressure power.