Studies on control of spin ordering in magneto-dielectric thin films and their application for future electronics devices
Studies on control of spin ordering in magneto-dielectric thin films and their application for future electronics devices
批准号:
17560621
负责人:
TOSHIYUKI Matsui
金额:
$2.3万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2006
中文摘要
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英文摘要
The target of this research project is to synthesize room-temperature ferromagnetic dielectric thin films, which can possibly apply for novel magneto-dielectric devices. The followings are the main results obtained in the projects.(1)The single crystalline BaFe_<1-x>Zr_x0_<3-δ> (x=0.0-0.8) thin films were successfully produced on (001) SrTiO_3 substrates by pulsed laser-beam deposition. The films were found to be highly resistive, up to the leakage current density of about 1.1x10^<-5> A/cm^2 at the bias electric field of 150 kV/cm for the x=0.7 sample. This is much less than 10^<-4> of that for the BaFe0_<3-δ>, single crystalline film, which implies that the dielectric properties have been distinctly improved by zirconium substitution. The magnetization loop measured at 5 K for the x=0.7 sample clearly shows hysteresis as well as the presence of the remanent magnetization. Hence, the magnetic ordering for the x=0.7 sample has been greatly enhanced, possibly due to the ferromagnetic spi … More n alignment of Fe ions. It should be worthwhile mentioning that the x=0.7 sample still exhibits a ferromagnetic characteristic at room temperature. Consequently, BaFe_<0.3>Zr_<0.7>0_<3-δ> is a potential candidate for practical use in some magnetoelectric devices, such as a ferroelectric-ferromagnetic gate field-effect-transistor in the near future.(2)The single crystalline Ba(Co_<1-x>Mn_x)0_<3-δ> (x=0.2 and 0.7) films with the pseudo-cubic crystal structure were successfully synthesized. The films were found to be highly resistive with a dielectric constant of ε=5.2 at 5 K. In contrast, the films exhibited semiconductor-like conduction behavior at room temperature. Room temperature ferromagnetic ordering can be realized in samples with a saturation magnetization of 1.20 μB/fu for the x=0.2 sample, in contrast to 1.41 μB/fu for the x=0.7 sample. A possible origin of the observed magnetic ordering may be due to the superexchange coupling of Mn4+(d3)-O2--Co4+(d5) ions with a bonding angle of 180 degrees. Less
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Ferromagnetic and Dielectric Behavior of Mn-Doped BaCoO_3
Mn掺杂BaCoO_3的铁磁和介电行为
DOI:
--
发表时间:
2005
期刊:
IEEE Transactions on Magnetics 41・10
影响因子:
--
作者:
[T.Inoue, et al.]
通讯作者:
et al.
Effect of Bi substitution on the magnetic and dielectric properties of epitaxially grown BaFe_0.3Zr_0.7O_<3-δ> thin films on SrTiO_3 substrates
Bi取代对SrTiO_3衬底上外延生长BaFe_0.3Zr_0.7O_<3-δ>薄膜磁介电性能的影响
DOI:
--
发表时间:
2007
期刊:
Joumal of Physics and Chemistry of Solids 68
影响因子:
--
作者:
[T.Matsui, et. al.]
通讯作者:
et. al.
DOI:
10.1016/j.jmatprotec.2004.06.013
发表时间:
2005-03
期刊:
Journal of Materials Processing Technology
影响因子:
6.3
作者:
[M. Makled;T. Matsui;H. Tsuda;H. Mabuchi;M. El‐Mansy;K. Morii]
通讯作者:
M. Makled;T. Matsui;H. Tsuda;H. Mabuchi;M. El‐Mansy;K. Morii
Electric and Magnetic properties of Ba(Co,Mn)O_<3-δ> Epitaxial Thin Films
Ba(Co,Mn)O_<3-δ>外延薄膜的电学和磁学性质
DOI:
--
发表时间:
2006
期刊:
Transaction of the Materials Research Society of Japan 31・1
影响因子:
--
作者:
[T.Inoue, et al.]
通讯作者:
et al.
DOI:
10.1063/1.1868887
发表时间:
2005-02
期刊:
Applied Physics Letters
影响因子:
4
作者:
[T. Matsui;E. Taketani;H. Tsuda;N. Fujimura;K. Morii]
通讯作者:
T. Matsui;E. Taketani;H. Tsuda;N. Fujimura;K. Morii
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