microstructure Development of multicrystal silicon ingot for solar battery by the control of twinning
孪生控制太阳能电池用多晶硅锭的显微组织开发
基本信息
- 批准号:17560652
- 负责人:
- 金额:$ 2.24万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2005
- 资助国家:日本
- 起止时间:2005 至 2006
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The mechanisms of columnar structure growth of the multicrystal silicon and influence of twining on the microstructure formation are investigated to the development of the photoelectric transformation efficiency and the productivity of solar battery cell fabricated by the unidirectional solidification technique.The solar battery-grade high-purity silicon crystals has been solidified in quartz crucibles, whose inside diameter is 20 mm and the height is 100 mm, at the velocity of 0.075 to 9.6 mm/s and a temperature gradient of 20K/cm by using the Bridgman type furnace at the Ar atmosphere.The columnar structures are observed parallel to the heat flow direction in a velocity about 1.2 mm/min, and the larger size grains are obtained at the lower solidification speed. Twin boundaries, which have the crystal orientation relationship of sigma 3, grow parallel to the heat flow direction. Therefore, the undercoolings for the growth were measured by using seeds of <111> and <101> and twin introduced <211> crystals. The <111> specimens has larger undercooling of 2.5〜5.5K and <101> has smaller. However, twin introduced <211> specimens has lowest undercooling of 0.5〜3.5K. Since it is also revealed that the solidification velocity of twin introduced <211> crystal is higher by the molecular dynamics simulation, the reentrant corner of twin boundary becomes kink site and can give an advantage to the faceted growth and the development of grain size.The silicon crystal grows to the orientation between <211> to <101> along to the crucible bottom. And the grain size was enlarged by increasing the undercooling as well as the faster solidification velocity of 0.6 to 2.4mm/min in the initial solidification region. However, in order to continue such large gain size, it is necessary to reduce the velocity to 0.12 to 0.3mm/min until middle and final solidification stage.
为了提高定向凝固太阳电池的光电转换效率和生产率,研究了多晶硅的柱状组织生长机理和缠绕对组织形成的影响。利用布里奇曼式熔化炉在Ar气氛中以0.075~9.6 mm/min的速度和20K/cm的温度梯度,在内径20 mm、高度100 mm的石英坩埚中凝固了太阳能电池级高纯硅晶体。在Ar气氛中,观察到平行于热流方向的柱状组织。在较低的凝固速度下,可以得到较大尺寸的晶粒。孪晶界沿热流方向平行生长,晶面取向关系为Sigma 3。因此,用<;111>;和<;101>;和孪晶引入的<;211>;晶体的晶种测量了生长的过冷度。<;111>;的过冷度较大,为2.5~5.5K,而<;101>;的过冷度较小。然而,引入孪晶的<;211>;样品的过冷度最低,为0.5~3.5K。由于分子动力学模拟还表明,引入孪晶的<;211>;晶体的凝固速度较快,孪晶界的凹角处形成扭结位置,有利于多面体的生长和晶粒尺寸的长大,硅晶体沿<;211>;到<;101>;的取向生长到炉底。随着过冷度的增加和初凝区较快的凝固速度(0.6~2.4 mm/min)的增大,晶粒度增大。然而,为了继续保持如此大的增益尺寸,有必要将速度降低到0.12~0.3 mm/min,直到中末期凝固阶段。
项目成果
期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Effect of Reentrant Twin Corners on Directional Solidification of Polycrystalline Silicon
凹入双角对多晶硅定向凝固的影响
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Hirofumi Miyahara;Seiko Nara;Keisaku Ogi
- 通讯作者:Keisaku Ogi
Solidification conditions at the Early Sages for Grain Control of Polycrystalline Silicon Ingot
多晶硅锭晶粒控制的早期凝固条件
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Hirofumi Miyahara;Takafumi Nakashima;Kozo Wakasugi;Seiko Nara;Keisaku Ogi
- 通讯作者:Keisaku Ogi
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MIYAHARA Hirofumi其他文献
MIYAHARA Hirofumi的其他文献
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{{ truncateString('MIYAHARA Hirofumi', 18)}}的其他基金
High-speed Production of High-Density Onion Type Graphite Crystal
高密度洋葱型石墨晶体的高速生产
- 批准号:
23656480 - 财政年份:2011
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Development of Thin Solar Battery Module Controlled at 211 Crystal Directions by Microscopic particle and Local Fusion Method
利用微观粒子和局域融合法开发211晶向控制的薄型太阳能电池模块
- 批准号:
22360315 - 财政年份:2010
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of multi-crystalline silicon for solar battery by using self seed-crystal
利用自种晶开发太阳能电池用多晶硅
- 批准号:
19560745 - 财政年份:2007
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
相似海外基金
Solidification control of multicrystal silicon ingot for solar battery
太阳能电池用多晶硅锭的凝固控制
- 批准号:
14350401 - 财政年份:2002
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Scientific Research (B)














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