Quantum Manipulation of Readiation Field in Semiconductor Microstructures
Quantum Manipulation of Readiation Field in Semiconductor Microstructures
批准号:
06245103
负责人:
YAMANISHI Masamichi
金额:
$99.78万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1997
中文摘要
1)基于电子和光子系统量子控制的半导体光发射器a)微腔自发辐射控制:利用量子限制斯塔克效应(QCSE),研究表明,在光激发下,半导体微腔中自发辐射的各种特性,如辐射强度、辐射模式和辐射复合寿命都发生了改变。然后,作为实际器件的原型,半导体微腔光发射器,它既有载流子注入的功能,通过电流和电场的量子阱中的应用,被制作和,在低温下,该器件的操作已被证实。除了这些自发辐射控制的实验外,还从实验上阐明了激子的振子强度和线宽对高Q微腔中出现的腔-极化激元色散的影响。此外,太赫兹电磁波的可能性 关于我们 B)亚泊松光子流的产生:从实验和理论上研究了半导体发光二极管(LED)中亚泊松光的产生机理。阐明了电子或空穴泵和复合过程的作用。在实验中,即使通过使用市售的LED,也表明在恒定电流操作下,在宽频率范围(100 MHz)上产生亚泊松光是可能的。此外,通过使用串联连接的LED,即使在恒压操作下也会产生亚泊松光。这些实验在室温下进行。在理论研究中,提出了QCSE对光子产生的阻断。计算机模拟表明,即使在恒压工作下,光子数涨落也被压缩到10光子尺度,在超低电流水平(~ 10 nA)下,在很短的时间尺度(100 ps)。2)低-指出了以往的腔量子理论框架中存在的各种问题量子电动力学(QED)在介质中的应用以介质中的偏振态作为量子化自由度,研究了各种QED效应,如动态Casimir效应产生的光子和吸收腔中的自发辐射。3)自然量子威尔斯阱中的自发辐射控制提出了在光栅衬底上制备自然量子阱薄膜((C6 H5 C2 H4 NH3)2 PbI 4)的分布反馈反射微腔。观察了极化激元模的形成和定向自发辐射。少
英文摘要
1) Semiconductor Light Emitters based on the quantum control of electron and photon systemsa) Spontaneous emission control by microcavity : Using quantum confined Stark effect (QCSE), it was shown that, under optical excitation, various characteristics of the spontaneous emissions such as the emission intenisity, radiation patterns, and the rediative recombination lifetime are modified in semiconductor microcavities. Then, as a prototype of the practical device, semiconductor microcavity light emitters, which has both the functions of carrier injection by current and the application of electric field in the QW, was fabricated and, at low temperature, the device operation has been confirmed. In addition to these experiments on spontaneous emission control, the influence of the oscillator strength and the linewidth of the excitons on the cavity-polariton dispersion, which apears in high-Q micorcavities, has been clarified experimentally. Also, the possibility of THz electromagnetic wave … More generation was pointed out (patented).b) Sub-poissonian photon flux generation : The mechanisms of the sub-Poissionian light generation in semiconductor light emitting diodes (LEDs) were investigated experimentaly and theoreticaly. The role of the electron or hole pump and the recombination processes was clarified. In the experiments, even by the use of commercially available LEDs, it was shown that the generation of sub-Poissionian lights over a wide frequency range, 100 MHz is possible under constant-current operation. In addition, the sub-Poissonian lights was shown to be generated even under constant-voltage operation, by the use ot series-connected LEDs. These experiments were performed at room temperature. In theoretical studies, QCSE blockade for the photon generation was proposed. By computer simulations, it was shown that even under constant voltage operation, the photon number fluctuations are squeezed in 10-photon scale, under ultra-low current level (〜10nA), in very short time-scale (100ps).2) Theories on the interactions between low-dimensional electrons and quantized photon field It was pointed out that there arises various problems in the former theoretical framework of the cavity quantum electrodynamics (QED) in a medium. By taking into account the polarizations in a medium as quantized freedums, various QED effects such as the photon generation by dynamical Casimir effect and the spontaneous emissions in absorptive cavity were investigated.3) Spontaneous emission control in natural quantum wells Distributed feedback reflector micorcavity formed by the corting of thin natural quantum well films ((C6H5C2H4NH3)2PbI4) on a grating-patterned substrate was proposed. The formation of polariton modes and the directional spontaneous emissions were ovserved. Less
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会议论文
Generation of electrical signals in THz band from coherent charge dipoles in microcavities
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批准号:12305006
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.7万
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财政年份:2000
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负责人:YAMANISHI Masamichi
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依托单位:
Spontaneous-light emitting devices based on microcavity-induced spontaneous emission control
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批准号:10555018
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.13万
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财政年份:1998
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负责人:YAMANISHI Masamichi
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依托单位:
Suppression of current shot noise level in semiconductor multiple junctions
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批准号:10650337
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.11万
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财政年份:1998
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负责人:YAMANISHI Masamichi
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依托单位:
海外基金