Suppression of current shot noise level in semiconductor multiple junctions

半导体多结中电流散粒噪声水平的抑制

• 批准号: 10650337
• 负责人: YAMANISHI Masamichi
• 金额: $ 2.11万
• 依托单位: Hiroshima University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650337/
• 关键词: Semiconductor multiple junction; Shot noise; Tunnel barrier; ショット雑音; 半導体発光素子; サブポアソン光

As the shot noise is one of the main noise sources in electronic devices, the suppression of a shot noise is expected for the architecture of semiconductor devices, such as a field effect transistor, a laser, and a light emitted diode (LED). Recently, the suppression of the shot noise level in current flow from the multiple tunnel junction (MTJ) was proposed, due to the coulomb charging effect at each tunnel junction.In this research, we experimentally investigated the possibility of noise suppression by using the semiconductor multiple tunnel junctions. In order to clarify the noise suppression by MTJ, we evaluated the photon number fluctuation (Fano Factor) from a LED, which is directiy connected with the MTJ. First, we prepared N×(n-GaAs / i-AlGaAs) tunnel devices by Molecular Beam Epitaxy and the wet chemical etching technique, where N is the number of barriers. When the N×(MTJ) whose resistance is by 20th much larger than the differential resistance of LED is connected with LED, we found the occurrence of the 1/N noise suppression in Fano Factor at room temperature.We also have been investigated the analysis of photon number fluctuation in LED in terms of the Langevin-equation method As a results, our experirnental results is in accordance with theoretical one, when the resistance of the multiple tunnel junction is much larger than the differential resistance of LED. Therefore, for the suppression of the shot noise, the MTJ is promising in semicbnductor devices.

由于散粒噪声是电子装置中的主要噪声源之一，因此对于诸如场效应晶体管、激光器和发光二极管（LED）的半导体装置的架构，期望抑制散粒噪声。近年来，由于多隧道结的库仑充电效应，人们提出了抑制多隧道结电流中散粒噪声的方法，本研究从实验上研究了利用半导体多隧道结抑制散粒噪声的可能性。为了阐明MTJ的噪声抑制，我们评估了来自与MTJ直接连接的LED的光子数波动（Fano因子）。首先，我们采用分子束外延和湿法化学腐蚀技术制备了N×（n-GaAs / i-AlGaAs）隧道器件，其中N为势垒数。当N×（MTJ）的电阻比LED的微分电阻大20倍时，我们发现在室温下Fano因子中出现1/N噪声抑制现象，并用Langevin方程方法研究了LED中光子数涨落的分析，实验结果与理论分析一致。当多重隧道结的电阻远大于发光二极管的微分电阻时，因此，对于抑制散粒噪声，MTJ在半导体器件中是有希望的。

项目成果

H.Sumitomo: "Wide-Band Deep Penetration of Photon-Number Fluctuations into Quantum Regime in Series-Coupled Light-Emitting-Diodes" Optics Letters. Vol.24,. 40-42 (1999)

H.Sumitomo：“串联耦合发光二极管中光子数涨落对量子体系的宽带深度渗透”光学快报。

H.Sumitomo: "Wide-Band Deep Penetration of Photon-Number FIucluations into Quantum Regime in Series-Coupled"Optics Letters. Vol.24,. 40-42 (1999)

H.Sumitomo：“串联耦合中光子数波动对量子体系的宽带深度渗透”光学快报。

H. Sumitomo: "Wideband deep penetration of photon-number fluctuations into the quantum regime in series-coupled light-emitting diodes"Optics Letters. Vol. 24. 40-42 (1999)

H. Sumitomo：“光子数波动的宽带深度渗透到串联耦合发光二极管的量子状态”光学快报。