"Fundamental Study of Single Electron Transport and Formation of Nano-size Structures"

“单电子传输和纳米尺寸结构形成的基础研究”

• 批准号: 08247105
• 负责人: KAWAMURA Kiyoshi
• 金额: $ 62.53万
• 依托单位: KEIO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-08247105/
• 关键词: Quantum dot; Coulomb blockade; Carbon nanotubes; STM; Kondo effect; Surface; Many electrons effect; ab initio calculation; 単電子デバイス; クーロンブロッケード; カーボンナノチューブ; 多電子系; 単電子トランジスター; トンネル電流; 量子伝導; 位相; ジョセフソン効果; クーロンブロッケイド; メゾスコピック系; 園体表面; 電流電圧特

Our research group studies physics of single electron devices. Two types of transistors have been fabricated in our group. Transistors which include semiconducting quantum dots exhibits orbital and spin states of artificial atoms while those which involve superconducting quantum dots have definite values of the superconducting phase. These properties were confirmed experimentally as well as theoretically.It has been theoretically confirmed that metallic quantum dots are possibly fabricated on surfaces of silicon and diamond. Properties and functioning of structures of atomic scale on these surfaces have been theoretically predicted. Formation of a small tunneling junction has been observed within holes of porous aluminum oxides in which metallic carbon nanotubes grow.We have observed electronic states and their relaxation mechanism within semiconducting microcrystals as well as nagnetic dispersion of dot arrays on the heterojunction of GaAs/AlGaAs. Theory of Coulomb blockade in small ferromagnetic tunnel junction has been constructed which propose devices to control spin state of electronic current.

我们的研究小组研究了单电子设备的物理。我们的小组已经制造了两种类型的晶体管。包括半导体量子点在内的晶体管表现出人工原子的轨道和自旋状态，而涉及超导量子点的晶体态则具有超导阶段的确定值。这些特性在实验和理论上得到了证实。从理论上讲，金属量子点可能在硅和钻石的表面上被制造。理论上已经预测了这些表面上原子量表结构的特性和功能。在多孔铝氧化物的孔中已经观察到了一个小隧道连接的形成，其中金属碳纳米管生长。我们已经观察到了电子状态及其在半导体微晶体中的弛豫机制，以及Gaas/Algaas heterojunction dot阵列的nagnetic分散。已经构建了小铁磁隧道连接中的库仑封锁理论，该理论已构建，该理论建议设备控制电子电流的旋转状态。

项目成果

K.Ohtsubo: "Influence of Environment on Tunneling through a Small Tunnel Junction"J.Phys.Soc.Jpn.. 66. 185 (1997)

K.Ohtsubo：“环境对通过小型隧道交汇处的隧道的影响”J.Phys.Soc.Jpn.. 66. 185 (1997)

星野忠次: "Proposal of a Micro-Fabrication for Al Nanostructures." Japanese Journal of Applied Physics. 36. 4049-4052 (1979)

Tadatsugu Hoshino：“关于铝纳米结构微加工的提议。”日本应用物理学杂志 36. 4049-4052 (1979)

津田穣: "Adatom Migration Mechanism at SA Steps on (001) Surfaces of Diamond Structure Crystals" Surface Sci.357/358. 844-848 (1996)

Jo Tsuda：“SA 的吸附原子迁移机制在金刚石结构晶体的 (001) 表面上”Surface Sci.357/358 (1996)。

R.Tamura, K.Akagi, M.Tsukada, S.Itoh, S.Ihara: "Electronic Properties of Polygonal Defects in Graphitic carbon Sheets"Phys.Rev.B.. 56. 1404-1411 (1997)

R.Tamura、K.Akagi、M.Tsukada、S.Itoh、S.Ihara：“石墨碳片中多边形缺陷的电子性质”Phys.Rev.B.. 56. 1404-1411 (1997)

A.Yajima, M.Tsukada, S.Watanabe, M.Ichimura, Y.Suwa, T.Onogi and H.Hashizume: "First-Principles Calculation of As Atomic Wires on H-Terminated Si (100) Surface"Phys.Rev.B. 60. 1456-1459 (1999)

A.Yajima、M.Tsukada、S.Watanabe、M.Ichimura、Y.Suwa、T.Onogi 和 H.Hashizume：“H 端接 Si (100) 表面上 As 原子线的第一原理计算”Phys.Rev