Development of an intelligent information processing device and circuit using silicon nanodisk array structures

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We have proposed and developed a spiking neuron device that consists of nanodisk array structures and a FinFET device, which is the most advanced CMOS device. The nanodisk array is fabricated using bio-nano-process and neutral beam etching techniques. A neuron part of this device is realized by a FinFET, and a synapse part consists of a nanodisk array. In spiking neuron models, generation of post-synaptic potentials, PSPs, is an essential function. For generating PSPs, we use a delay in electron hopping among nanodisks. Generated PSPs have fluctuation caused by stochastic electron movement, which can be used for neural information processing effectively using noise. We have analyzed electron movement in a nanodisk array by single-electron circuit simulation, and designed the nanostructure including a control electrode. We have also developed an advanced model of the modular-network self-organizing map, SOM, as an information processing model suitable for our nanodevice.