Study for a radiation-hardened CMOS circuitdirectly fabricated on a detector-grade silicon wafer with an application of a rapid nitridation process

应用快速氮化工艺在探测器级硅片上直接制作抗辐射 CMOS 电路的研究

• 批准号: 09354003
• 负责人: IKEDA Hirokazu
• 金额: $ 14.02万
• 依托单位: High Energy Accelerator Research Organization
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09354003/
• 关键词: High Energy Physics; Particle Tracking Detector; Silicon Detector; CMOS Preamplifier; CMOS Integrated Circuit; Rapid Thermal Nitridation; Radiation Damage; Radiation-hardening; 秘跡検出器; CMOS・VLSI

In order to apply for a high luminosity electron-positron collider experiment we have investigated a possibility of integrating strip and/or pixelde-tectors with a readout circuits. Since the circuits are irradiated by ionizing particles and gamma rays, the characteristics of transistors are easy to be degraded. In order to overcome the nature of a radiation damage, one way proposed was to apply a rapid thermal nitridation process for a gate oxide of a CMOS FET. We actually obtained an indication of an improvement in terms of a threshold shift and/or degradation in noise, there still remained a room for a further adjustment of process conditions. An alternative way was proposed to apply for a 0.8-micron CMOS process in place of the so-far employed 1.2-micron CMOS process, which revealed a significant improvement in terms of a noise degradation coefficient for an increment of a radiation dose as well as an initial noise slope.

为了应用于高亮度正负电子对撞机实验，我们研究了将条形和/或象素探测器与读出电路集成的可能性。由于电路受到电离粒子和伽马射线的照射，晶体管的特性容易劣化。为了克服辐射损伤的性质，提出的一种方法是对CMOS FET的栅极氧化物应用快速热氮化工艺。我们实际上获得了阈值偏移和/或噪声退化方面的改进的指示，仍然存在进一步调整工艺条件的空间。提出了一种替代方法，以应用0.8微米CMOS工艺代替目前采用的1.2微米CMOS工艺，这揭示了在辐射剂量增加的噪声退化系数以及初始噪声斜率方面的显著改善。

项目成果

H.Ikeda: "Frontend interface of the SVD readout system for BELLE"IEEE Trans.on Nucl.Sci. NS-44. 275-282 (1997)

H.Ikeda：“BELLE SVD 读出系统的前端接口”IEEE Trans.on Nucl.Sci。

N.ohta.: "Thick and large area PIN diodes for hard X-ray astronomy"Nucl.Instr.&Meth.. A436. 291-296 (1999)

N.ohta.：“用于硬 X 射线天文学的厚大面积 PIN 二极管”Nucl.Instr.

Y.Tsujita et al.: "Parallel-processing diagnostic program for a transputer-based readout system"Japan Journal of Appl. Phys.. 38. 6498-6501 (1999)

Y.Tsujita 等人：“基于晶片机的读出系统的并行处理诊断程序”日本应用杂志。

N. Ota: "Thick and large area PIN diodes for hand X-ray astronomy"Nucl. Instr. & Meth. A346. 291-296 (1999)

N. Ota：“用于手持 X 射线天文学的厚大面积 PIN 二极管”Nucl。

Y.Tsujita: "Parallel-processing diagnostic program for a transputer-based readout system"Japan Journal of Appl.Phys.. 38. 6498-6501 (1999)

Y.Tsujita：“基于晶片机的读出系统的并行处理诊断程序”Japan Journal of Appl.Phys.. 38. 6498-6501 (1999)