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Development for liguid phase epitaxy by solvent evaporation

溶剂蒸发液相外延技术的发展

基本信息

批准号：
09650013
负责人：
TAKEI Humihiko
金额：
$ 2.11万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

项目摘要

Because of high convenience and productivity, the epitaxial growth techniques possess high utilities for fabricating many electronic devices. The liquid phase epitaxy is one of the most useful method among these epitaxial techniques due to high growth rate and reproducibility. The solvent evaporation epitaxy, which has been developed by us, is conducted in a following simple way : a solid mixture of solute and solvent is plastered on a surface of substrate crystals and then the solvent is evaporated by heating them. Despite of the simplicity, only a few trials of this epitaxy have been reported and many points for developping the technique have remained. In this study, we applied the technique for several oxide systems. The (100) surfaces of MgO single crystals were used as a substrate and experiments on simple oxides of MnO, CoO and NiO, oxide-superconductors of the BSCCO system and a transparent conductive spinel of ZnGa_2O_4 were reported. From the results of this study, the following superior points became clear : 1) The method is simple. 2) Epitaxial growth proceeds reproductively when the experimental conditions are settled. 3) No further treatment for separating the epitaxed layers from the solutions is needed. On the other hand, the next disadvantageous points existed : 1) Solvent materials is important but limited. 2) Because of the high heating temperatures, unexpected chemical reactions often occur between films and substrates. 3) Uniform epitaxial growth proceeds only when the appropriate growth conditions are settled sharply. As a conclusion, the solvent evaporation epitaxy is actually a prominent method for preparing oxide crystal films. However, it also became clear that there remain many problems to produce perfect films for many devices.

由于外延生长技术的高便利性和高生产率，其在制造许多电子器件方面具有很高的实用性。液相外延法由于其高的生长速率和可重复性而成为外延技术中最有用的方法之一。我们开发的溶剂蒸发外延以如下简单的方式进行：将溶质和溶剂的固体混合物涂敷在衬底晶体的表面上，然后通过加热蒸发溶剂。尽管简单，这种外延只有少数试验已被报道，许多点的发展技术仍然存在。在这项研究中，我们应用了几个氧化物系统的技术。以MgO单晶的（100）面为衬底，报道了MnO、CoO和NiO简单氧化物，BSCCO系氧化物超导体和ZnGa_2O_4透明导电尖晶石的实验。从本研究的结果中，以下上级点变得清晰：1）方法简单。2)当实验条件确定后，外延生长可重复进行。3)不需要用于将外延层与溶液分离的进一步处理。另一方面，也存在以下不利之处：1）溶剂材料重要但有限。2)由于高加热温度，膜和基底之间经常发生意想不到的化学反应。3)只有当适当的生长条件急剧稳定时，才能进行均匀的外延生长。因此，溶剂蒸发外延是制备氧化物晶体薄膜的一种重要方法。然而，也变得清楚的是，仍然存在许多问题来生产用于许多设备的完美膜。