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Preparation of Semiconductor Superlattice Film by Hydro-thermal Photoelectrochemical Method

水热光电化学法制备半导体超晶格薄膜

基本信息

批准号：
09650909
负责人：
MATSUMOTO Yasumichi
金额：
$ 2.24万
依托单位：
Kumamoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

项目摘要

In this research, the clectrodeposition and photoelectrochemical deposition have been carried out to prepare high performance inorganic materials, and the following results were obtained. The cobalt oxide film such as CoOOH was obtained using autoclave electrolysis cell where the electrodeposition was done under higher temperatures higher than 100ﾟC, and the rear earth ions such as Sm and La were intercalated into the layer structure, although epitaxial growth was not observed. The photoelectrochemical epitaxial growth (PEEG) was observed for the electrodeposition of lead dioxide and ferric oxide on a single crystal titanium dioxide electrode under illumination. The crystal orientation in the PEEG depended on the crystal mismatch between the deposited oxide and the substrate, and the crystal grew in the direction of the smallest crystal mismatch. The crystal growth model has been demonstrated in the PEEG.In this model, the oxide film covered on the entire surface of the electrode if the illumination is done during the electrolysis. On the other hand, the film partly covered the electrode surface, but the crystal grew largely in the case of the pulse illumination. This was proved by AEM measurement Consequently, OH radical will be produced smoothly at some parts of the electrode surface but slowly at other parts. The large tunneling current was observed at the PbO_2 deposited polycrystalline TiO_2 electrode, but was not at the single crystal TiO_2, electrode. The Fermi level pinning model was proposed for the former electrode. This electrode was very useful as the industrial anode material.

本研究采用电沉积法和光电化学沉积法制备了高性能的无机材料，并取得了以下成果。使用高压釜电解槽获得钴氧化物膜如CoOOH，其中电沉积在高于100 ° C的较高温度下进行，并且稀土离子如Sm和La插入层结构中，尽管没有观察到外延生长。研究了光照条件下PbO2和FeO2在TiO2单晶电极上的光电化学外延生长。PEEG中的晶体取向取决于沉积的氧化物和衬底之间的晶体失配，并且晶体在最小晶体失配的方向上生长。在PEEG中，晶体生长模型已经得到了验证，在该模型中，如果在电解过程中进行光照，则氧化膜覆盖在电极的整个表面上。另一方面，膜部分地覆盖电极表面，但是在脉冲照射的情况下晶体大量生长。结果表明，OH自由基在电极表面的某些部位产生较平稳，而在另一些部位产生较缓慢。在PbO_2沉积的多晶TiO_2电极上观察到较大的隧穿电流，而在单晶TiO_2电极上观察不到隧穿电流。提出了前电极的费米能级钉扎模型。该电极作为工业阳极材料是非常有用的。