Research on Resist for X-ray and E-B Total Dry Vacuum Lithography

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It was demonstrated that the vacuum lithography process will be applied for submicron LSI devices and X-ray mask fabrications.Enhancement of X-ray sensitivity was easily attained by forming Sn containing plasma polymerized MMA. Submicron pattern was formed on Sn containing plasma polymerized MMa. It was also found that the resistance of oxygen reactive ion etching could be obtained by incorporating a few % metals such as Sn or Si atoms into plasma polymerized resists. By inducing the selective incorporation of metals into resist under X-ray exposure, it was found to be clear that the formation of fine pattern could be realized by single layer resist process under oxygen reactive ion etching. Gold-carbon mixture film (Au-C) was deposited simultaneouslly by using plasma polymerization of hydrocarbon monomer and evaporation of gold as an X-ray absorber. Submicron line and space pattern was successfully fabricated on gold-carbon mixture film. As an X-ray membrane, the high transparent B-C-N film was formed by plasma CVD with the tensile stress of 0.8-6.5x10^9 dyn/cm^2.Scanning electron microscope with a function of electron beam delineation was developed and installed in one of four separate vacuum chambers with a rotation mechanical equipment for electron beam vacuum lithography processes. X-ray source with a cone type Mo target was developed. The large X-ray flux was easily obtained for the target cooled by evaporation heat of alcohol for target cooling. Film thickness meter using double twin path laser interference was developed. The resolution of 1nm was realized. Plasma etching under VUV exposure was developed for a dry development of resist. mask alignment technology using moire diffraction was developed and the resolution of 10nm was realized.