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Research on Resist for X-ray and E-B Total Dry Vacuum Lithography

X射线和E-B全干式真空光刻光刻胶的研究

基本信息

批准号：
59420030
负责人：
HATTORI Shuzo
金额：
$ 23.49万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1984
资助国家：
日本
起止时间：
1984 至 1986
项目状态：
已结题

项目摘要

It was demonstrated that the vacuum lithography process will be applied for submicron LSI devices and X-ray mask fabrications.Enhancement of X-ray sensitivity was easily attained by forming Sn containing plasma polymerized MMA. Submicron pattern was formed on Sn containing plasma polymerized MMa. It was also found that the resistance of oxygen reactive ion etching could be obtained by incorporating a few % metals such as Sn or Si atoms into plasma polymerized resists. By inducing the selective incorporation of metals into resist under X-ray exposure, it was found to be clear that the formation of fine pattern could be realized by single layer resist process under oxygen reactive ion etching. Gold-carbon mixture film (Au-C) was deposited simultaneouslly by using plasma polymerization of hydrocarbon monomer and evaporation of gold as an X-ray absorber. Submicron line and space pattern was successfully fabricated on gold-carbon mixture film. As an X-ray membrane, the high transparent B-C-N film was formed by plasma CVD with the tensile stress of 0.8-6.5x10^9 dyn/cm^2.Scanning electron microscope with a function of electron beam delineation was developed and installed in one of four separate vacuum chambers with a rotation mechanical equipment for electron beam vacuum lithography processes. X-ray source with a cone type Mo target was developed. The large X-ray flux was easily obtained for the target cooled by evaporation heat of alcohol for target cooling. Film thickness meter using double twin path laser interference was developed. The resolution of 1nm was realized. Plasma etching under VUV exposure was developed for a dry development of resist. mask alignment technology using moire diffraction was developed and the resolution of 10nm was realized.

结果表明，真空光刻工艺可用于亚微米LSI器件和X射线掩模的制作，而含Sn的等离子体聚合MMA可提高X射线灵敏度。在含Sn等离子体聚合的MMa上形成亚微米图案。还发现，通过在等离子体聚合的抗蚀剂中掺入百分之几的金属如Sn或Si原子，可以获得抗氧反应离子蚀刻性。通过诱导金属在X射线曝光下选择性地结合到抗蚀剂中，发现清楚的是，在氧反应离子蚀刻下，可以通过单层抗蚀剂工艺实现精细图案的形成。采用等离子体聚合烃类单体和蒸发金作为X射线吸收剂的方法，成功地制备了金-碳混合物薄膜（Au-C）。在金碳混合膜上成功地制作了亚微米线和空间图形。作为X射线膜，采用等离子体化学气相沉积法在拉伸应力为0.8-6.5x10^9 dyn/cm^2的条件下形成高透明的B-C-N薄膜。开发了具有电子束描绘功能的扫描电子显微镜，并安装在四个独立的真空室之一中，带有旋转机械设备用于电子束真空光刻工艺。研制了锥形钼靶X射线源。用乙醇蒸发热冷却靶，容易获得大的X射线通量。研制了一种双光路激光干涉膜厚测量仪。实现了1 nm的分辨率。在VUV曝光下的等离子体蚀刻被开发用于抗蚀剂的干法显影。研制了基于莫尔衍射的掩模对准技术，实现了10 nm的分辨率。