Research on Resist for X-ray and E-B Total Dry Vacuum Lithography

结果表明，真空光刻工艺将应用于亚微米LSI器件和X射线掩模的制作，通过形成含锡等离子体聚合的MMA可以很容易地提高X射线的灵敏度。在含锡等离子体聚合的MMA表面形成了亚微米图形。还发现，在等离子体聚合抗蚀剂中加入少量的金属，如锡或硅原子，可以获得抗氧反应离子刻蚀的性能。通过在X射线曝光下诱导金属在抗蚀剂中的选择性掺入，发现氧反应离子刻蚀下的单层抗蚀剂工艺可以实现微细图形的形成。利用烃类单体的等离子体聚合和金的蒸发作为X射线吸收材料，同时沉积了金-碳混合薄膜。成功地在金-碳混合薄膜上制备了亚微米线条和空间图形。采用等离子体化学气相沉积技术，在0.8~6.5×10~9dyn/cm~2的拉应力范围内，制备了高透射率的B-C-N薄膜。研制了具有电子束刻画功能的扫描电子显微镜，并安装在四个独立的真空室中的一个真空室中，并配备了旋转机械装置，用于电子束真空光刻工艺。研制了锥形钼靶X射线源。对于酒精蒸发热冷却的靶材，容易获得较大的X射线通量。研制了双双光路激光干涉式薄膜测厚仪。实现了1 nm的分辨率。真空紫外光照射下的等离子体刻蚀是为干法显影抗蚀剂而开发的。开发了莫尔衍射法掩模对准技术，实现了10 nm的分辨率。

It was demonstrated that the vacuum lithography process will be applied for submicron LSI devices and X-ray mask fabrications.Enhancement of X-ray sensitivity was easily attained by forming Sn containing plasma polymerized MMA. Submicron pattern was formed on Sn containing plasma polymerized MMa. It was also found that the resistance of oxygen reactive ion etching could be obtained by incorporating a few % metals such as Sn or Si atoms into plasma polymerized resists. By inducing the selective incorporation of metals into resist under X-ray exposure, it was found to be clear that the formation of fine pattern could be realized by single layer resist process under oxygen reactive ion etching. Gold-carbon mixture film (Au-C) was deposited simultaneouslly by using plasma polymerization of hydrocarbon monomer and evaporation of gold as an X-ray absorber. Submicron line and space pattern was successfully fabricated on gold-carbon mixture film. As an X-ray membrane, the high transparent B-C-N film was formed by plasma CVD with the tensile stress of 0.8-6.5x10^9 dyn/cm^2.Scanning electron microscope with a function of electron beam delineation was developed and installed in one of four separate vacuum chambers with a rotation mechanical equipment for electron beam vacuum lithography processes. X-ray source with a cone type Mo target was developed. The large X-ray flux was easily obtained for the target cooled by evaporation heat of alcohol for target cooling. Film thickness meter using double twin path laser interference was developed. The resolution of 1nm was realized. Plasma etching under VUV exposure was developed for a dry development of resist. mask alignment technology using moire diffraction was developed and the resolution of 10nm was realized.