Numerical analysis of Safety operation area of Turn-off Thyristors

可关断晶闸管安全工作区的数值分析

• 批准号: 60550193
• 负责人: TAMURA M.
• 金额: $ 1.34万
• 依托单位: The University of Tokyo, Faculty of Engineering, Dept. of Electrical Eng.,
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1985
• 资助国家: 日本
• 起止时间: 1985 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-60550193/
• 关键词: Power Semiconductor device; Turn-off Thyristor; GTO; Static induction thyristor; switching characteristics; numerical analysis; 差分法; ゲートターンオフサイリスタ; 半導体特性の数値解析スイッチング現象

A novel scheme for the numerical analysis of teh switching phenomena in turn-off thyristors is introduced. With it switching characteristics and their dependency on the device structure are studied for Gate Turn-off Thyristors (GTO) and Static Induction Thyristors (SITh).The originalfeatures of the scheme are - Introduction of irregularand varying grid - Quasi-3 dimensional analysis based on two dimensional model Based on the inner states of power semiconductor devices in the switching transient, it is deduced that the area and the grid structurewhich give the most efficient convergence to the calculation, are localized to some part of the device and uniform enough to be analyzed with the two dimensional model. Then application of irregular mesh to the model is tried and the mesh composition is varied according to the type of transient happened in the device. With such scheme the computation time is reduced 40-50%. It can be applied to the computer-aided design of the device with resonable costs. Even if the device has the three dimensional structure, due to the constraints from manufacturing processes and structural design, the spcified phenomena in switching. transient happens mostly to be uniform in a cross section of the device. Then two dimensional model is able to descibe the states in transient. If they are switched each other during the progress of transient, the numerical analysis on the three dimensional device becomes possible.With this analytical scheme, the safety operational area of GTO and SITH is studied. The important knowledge on the device structures are obtained. Some of them are as follows. - Relation between the behaviour of the dvice in tail period and device parameters - Trade-off between anode shorting structure and carrier life time control - Carrier penetration into the buried gate of turn-off thyristors

本文介绍一种数值分析可关断晶闸管开关现象的新方法。该方案的主要特点是：引入不规则变栅网，在二维模型基础上进行准三维分析，根据功率半导体器件在开关瞬态过程中的内部状态，推导出使计算最有效收敛的区域和网格结构局限于器件的某个部分，并且足够均匀，可以用二维模型进行分析。然后尝试将不规则网格应用到模型中，并根据装置中发生的瞬态类型改变网格组成。采用这种方案，计算时间可减少40- 50%.该方法可用于器件的计算机辅助设计，且成本合理。即使器件具有三维结构，由于制造工艺和结构设计的限制，开关中的特殊现象也会出现。瞬态在器件的横截面中大多数是均匀的。这样，二维模型就可以描述瞬态过程中的状态。如果在瞬态过程中两者相互切换，就可以对三维装置进行数值分析，并利用该分析方案对GTO和SITH的安全工作区进行了研究。获得了有关器件结构的重要知识。其中一些如下。- 器件在尾期的行为与器件参数之间的关系-阳极短路结构与载流子寿命控制之间的权衡-载流子渗透到可关断晶闸管的埋栅中

项目成果

E.Masada;Y.Tobe;T.Nakajima;M.Tamura: EPE 2nd European Conference. 343-348 (1987)

E.Masada；Y.Tobe；T.Nakajima；M.Tamura：EPE 第二届欧洲会议。

E.Masada,M.Tamura,T.Nakajima.: "Simulation of Switching Prosesses in Torn-off Thyristors" PESC Conference. (1988)

E.Masada、M.Tamura、T.Nakajima.：“断开晶闸管中开关过程的模拟”PESC 会议。

正田英介: 日本シミュレーション学会 第8回有限要素法シンポジウム. A. 1-10 (1987)

Eisuke Shoda：日本模拟学会第八届有限元方法研讨会。A. 1-10 (1987)。

E.Masada;M.Tamura;T.Nakajima: PESC Conference. (1988)

E.Masada；M.Tamura；T.Nakajima：PESC 会议。

佐藤,田村,正田: 電気学会昭和62年度全国大会. (1987)

Sato、Tamura、Shoda：1985 年日本电气工程师学会全国会议（1987 年）。