Preparation of Ferroelectric Thin Film and its Applications to Functional Devices

铁电薄膜的制备及其在功能器件中的应用

• 批准号: 60550231
• 负责人: ADACHI Masatoshi
• 金额: $ 1.34万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1985
• 资助国家: 日本
• 起止时间: 1985 至 1986
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-60550231/
• 关键词: PZT; PT; Pyroelectric Devices; SAW; Tungsten-Bronze; Hetero-Epitaxial; タングステンブロンズ

Characteristics of SAW properties of tungsten-bronze layered structures of ( <K_3Li_2Nb_5O_(15)> )/ (substrate) and ( <Pb_2KNb_5O_(15)> )/(substrate) combinations have been calculated. Hetero-epitaxial growth of these tungsten bronze films have been also described. KLN single-crystal films have been successfully grown with good epitaxy onto KBN and sapphire substrates by the sputtering technique. The SAW propagation on a KLN film has been observed in a layered structure of (KLN)/(sapphire).[111]-oriented PZT films have been successfully grown with good epitaxy onto the c plane of sapphire and epitaxial Pt film substrates by the rf-magnetron sputtering method. The crystallographic identifications of these PZT and PT films are made by the X-ray and RHEED measurements. Dielectric, ferroelectric and pyroelectric properties of the films are measured. Pyroelectric coefficients at room temperature have been determined as 4.5 and 3.5 x <10^(-8)> C/ <cm^2> K for epitaxial PZT and polycrystalline PT films, respectively. Epitaxial PZT films on Pt/sapphire possess desirable properties for potential applications in pyroelectric devices.

（<k_3li_2nb_5o_（15）>）/（基板）和（<pb_2knb_5o_（15）>）/（subStrate）组合的Tungsten-Bronze分层结构的SAW特性的特性。这些钨青铜薄膜的杂型ePitagial生长也已被描述。 KLN单晶膜通过溅射技术成功地生长了良好的KBN和Sapphire底物。在（kln）/（蓝宝石）的分层结构中观察到了对KLN膜的锯传播。[111]面向的PZT膜成功地通过RF-MAGNETRONSTRONSPOUSTRON SPUSTOMPTOMTING方法在蓝宝石的C和外延膜基质的C上成功地生长。这些PZT和PT膜的晶体学识别是通过X射线和Rheed测量进行的。测量膜的介电性，铁电和高电特性。在室温下的pyroelectric系数已确定为4.5和3.5 x <10^（-8）> c/ <cm^2> k，分别为外生PZT和多晶PT膜。 PT/Sapphire上的外延PZT膜具有理想的特性，用于在pyroelectric设备中的潜在应用。

项目成果

塩崎忠: Ferroelectrics. 63. 227-234 (1985)

盐崎正：铁电体。63. 227-234 (1985)

安達正利: to be publised in Proceedings of 1986 IEEE International Symposium on Applications of Ferroelectrics,IEEE New York,(June,9-11,1986;Bethlehem,Pennsylvania). (1987)

Masatoshi Adachi：发表于 1986 年 IEEE 国际铁电体应用研讨会论文集，IEEE 纽约，（1986 年 6 月 9 日至 11 日；宾夕法尼亚州伯利恒）（1987 年）。

安達正利: Japanese Journal of Applied Physics. 26. 550-553 (1987)

足立正敏：日本应用物理学杂志。26. 550-553 (1987)

Masatoshi Adachi: "Sputter-Deposition of [111]-Axis Oriented Rhombohedral PZT Films and Their Dielectric, Ferroelectric and Pyroelectric Properties" Japanese Journal of Applied Physics. 26. 550-553 (1987)

Masatoshi Adachi：“[111]轴定向菱面体 PZT 薄膜的溅射沉积及其介电、铁电和热释电特性”日本应用物理学杂志。

Tadashi Shiosaki: "Properties of Sputter-Deposited PbTi <O_3> , Pb(Zr,Ti) <O_3> , <Pb_2KNb_5O_(15)> Films" Ferroelectrics. 63. 227-234 (1985)

Tadashi Shiosaki：“溅射沉积 PbTi <O_3> 、Pb(Zr,Ti) <O_3> 、<Pb_2KNb_5O_(15)> 薄膜的特性”铁电体。