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Developments and Application of Multicolor Thin Film EL Devices

多色薄膜EL器件的开发及应用

基本信息

批准号：
60550238
负责人：
TAKASHI Hitate
金额：
$ 0.19万
依托单位：
Kanagawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1986
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-60550238/
关键词：
thin film electroluminescence 多色EL素子

项目摘要

The electroluminescent characteristics of ac-driven thin-film electroluminescent devices were studied. These devices were proposed and developed by the head investigatior, and differed from usual devices in the structure of the active layer, i.e., the additional intermediate layer ("gate layer") was buried in ZnS active layers. Thus, the strucure of devices is a glass substrate: electrode ( <SnO_x> )-insulator ( <Y_2> <O_3> )-active layer (impurity doped ZnS)-gate layer-active layer <II> (impurity doped ZnS)-insulatalor <II> ( <Y_2> <O_3> )-electrode <II> (Al).The results of the investigation are as follows.(1). The emission color of the device was able to be continuously varied between the emission color of the active layer and that of <II> by the driving voltage and frequency, only when the gate layer thickness was in the optimum range which was dependent on its material.(2). The optimum range of a gate layer thickness was 10 - 60 <Ang> in the case of a metal gate, and 500 -1000 <Ang> of an insulator gate. In the case of a semiconductor gate it was wide considerably, for example, it was 200 - 3000 <Ang> when a gate layer material was <WO_3> . Further, it was not dependent on the thickness of each active layer or a kind of impurity doped in the active layer.(3). The tendencies of the dependency of emisson color on the driving conditions were different according to gate materials. These were approximately grouped into two classes, and were contrary with each other.(4). The changeablity of the emisson color was maintained at low temperature (approx. -100゜C). The electroluminescent spectrum of an active layer, however, was changed at low temperatuere depending on a kind of an impurity. This phenomenon had nothing to do with the existence of a gate layer.(5). It was considered that the changeablity of the emission color of these devices was due to the accumulation and the emission of electrons at the gate layer.

研究了交流驱动薄膜电致发光器件的电致发光特性。这些器件是由首席研究员提出并开发的，与普通器件的不同之处在于有源层的结构，即附加的中间层（“栅极层”）埋在ZnS有源层中。因此，器件结构为玻璃基板：电极（<SnO_x>）-绝缘体（<Y_2><O_3>）-有源层（杂质掺杂ZnS）-栅极层-有源层<II>（杂质掺杂ZnS）-绝缘体<II>（<Y_2><O_3>）-电极<II> (Al).调查结果如下：(1)．仅当栅极层厚度处于取决于其材料的最佳范围内时，器件的发射颜色才能够通过驱动电压和频率在有源层和<II>的发射颜色之间连续变化。(2)．栅极层厚度的最佳范围在金属栅极的情况下为10～60埃，在绝缘体栅极的情况下为500～1000埃。在半导体栅极的情况下，其相当宽，例如，当栅极层材料为<WO_3>时，其为200-3000<Ang>。此外，它不依赖于每个有源层的厚度或有源层中掺杂的杂质的种类。(3)．根据栅极材料的不同，发光颜色对驱动条件的依赖性的趋势也不同。这些大致可分为两类，且彼此相反。(4)．在低温（约-100゜C）下仍保持发光颜色的可变性。然而，有源层的电致发光光谱在低温下根据杂质的种类而改变。这种现象与栅层的存在无关。(5)．人们认为这些器件发射颜色的变化是由于电子在栅极层的积累和发射造成的。