The Synthesis of Titanium Diboride Film by a Reactive RF Ion Plating Method
反应性射频离子镀法合成二硼化钛薄膜
基本信息
- 批准号:60550498
- 负责人:
- 金额:$ 1.15万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (C)
- 财政年份:1985
- 资助国家:日本
- 起止时间:1985 至 1986
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This study was attempted to deposit <TiB_2> thin film on metal substrates at low temperature, about 140゜C, by a new method whose system was combined with an ion plating Method and a CVD one ; Ti was supplied to substrates by an RF ionplating method and B by a CVD method by the hydrogen reduction of <BCl_3> . Source gas ratio [ <H_2> / <BCl_3> ] was more effective for the formation of tinanium compounds than any other experimental condition. Titanium compound layers synthesized were classified into eight patterns on their main composition identified by X-ray diffraction ; type <I> , <TiH_(1.924)> , type <II> , <TiH_2> and Ti, type <III> ,Ti and <Ti_2B_5> , type <IV> ,TiB and Ti, type <V> , <TiB_2> and <Ti_3B_4> , type <VI> , <Ti_2B_5> and TiB, type <VII> , <Ti_2B_5> and <TiB_2> , type <VIII> , <TiB_2> . The highest hardness of thelayers was about Hv=1400 <kgfmm^(-2)> obtained at a specimen of type <V> . Generally, the cohearrency between the layers and aluminium substrate was the best of all. After this, a mechanism for the formation of titanium borides by this method will be invesigated.
本研究尝试<TiB_2>在低温(约140 ℃)下用一种新的方法在金属基底上沉积存款薄膜,该方法将离子镀法和CVD法相结合,通过RF离子镀法向基底提供Ti,通过CVD法通过氢气还原向基底提供B<BCl_3>。源气比[<H_2>/<BCl_3>]对锡化合物的形成比其他实验条件更有效。用X射线衍射法对钛化合物层的主要成分进行了分析,将钛化合物层分为8种类型:型<I>、<TiH_(1.924)>型<II>、<TiH_2>和Ti型<III>、Ti和<Ti_2B_5>型<IV>、TiB和Ti型、和<V><TiB_2><Ti_3B_4>型<VI>、<Ti_2B_5>和TiB型<VII>、<Ti_2B_5><TiB_2>和型<VIII><TiB_2>。型试样的最高硬度约为Hv=1400 <kgfmm^(-2)><V>。一般来说,涂层与铝基体之间的共渗性最好。之后,将研究通过这种方法形成钛硼化物的机制。
项目成果
期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Tadao Sato: "The Synthesis of Titanium Boride Film by a Reactive Ion Plating Methode" DENKI KAGAKU.
佐藤忠雄:“反应离子镀法合成硼化钛薄膜”电气化学。
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