The Synthesis of Titanium Diboride Film by a Reactive RF Ion Plating Method

本研究旨在<TiB_2>在低温下沉积金属沉积薄薄膜，约为140 ° C，通过一种新的系统方法，将系统与一种离子平板法和一种CVD装置组合在一起; Ti通过一种射频平板法补充，通过一种射频平板法补充，通过一种CVD方法B通过一种氢减量<BCl_3>。源气体比率[<H_2>/<BCl_3>]对钛化合物的形成比任何其他实验条件都更有效。钛复合层将X射线衍射识别的主要成分的八种模式<I><II><TiH_2><III><Ti_2B_5><IV><V><TiB_2><Ti_3B_4><VI><Ti_2B_5><VII><Ti_2B_5><TiB_2><VIII>分类为钛复合层;类型， &lt;TiH_（1.924）&gt; ，类型，和Ti，类型，Ti和，类型，TiB和Ti，类型，和，类型<TiB_2>。Thelayers最难的是Hv=1400 &lt;kgfmm^（-2）&gt;被发现在一种类型中<V>。一般来说，分层和铝基板之间的相干性是最好的。在这种情况下，钛硼形成的一种机制将由这种方法来揭示。

This study was attempted to deposit <TiB_2> thin film on metal substrates at low temperature, about 140゜C, by a new method whose system was combined with an ion plating Method and a CVD one ; Ti was supplied to substrates by an RF ionplating method and B by a CVD method by the hydrogen reduction of <BCl_3> . Source gas ratio [ <H_2> / <BCl_3> ] was more effective for the formation of tinanium compounds than any other experimental condition. Titanium compound layers synthesized were classified into eight patterns on their main composition identified by X-ray diffraction ; type <I> , <TiH_(1.924)> , type <II> , <TiH_2> and Ti, type <III> ,Ti and <Ti_2B_5> , type <IV> ,TiB and Ti, type <V> , <TiB_2> and <Ti_3B_4> , type <VI> , <Ti_2B_5> and TiB, type <VII> , <Ti_2B_5> and <TiB_2> , type <VIII> , <TiB_2> . The highest hardness of thelayers was about Hv=1400 <kgfmm^(-2)> obtained at a specimen of type <V> . Generally, the cohearrency between the layers and aluminium substrate was the best of all. After this, a mechanism for the formation of titanium borides by this method will be invesigated.