Low Pressure Vapor Phase Growth and Control of Electrical and Optical Properties of Zinc Selenide Single Crystalline Thin Films

硒化锌单晶薄膜的低压气相生长及电学和光学性能的控制

• 批准号: 61550010
• 负责人: MATSUMOTO Takashi
• 金额: $ 1.34万
• 依托单位: Yamanashi University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61550010/
• 关键词: Zinc Selenide; Low Pressure Vapor Phase Growth; Epitaxial Growth; II-VI Compound Semiconductor; Optical Properties; 電気的特性; 【II】-【VI】族化合物半導体; 【II】-【VI】族混晶半導体

Single crystalline thin films of zinc selenide (ZnSe) have been grown on GaAs substrates by using low pressure vapor phase epitaxy (LPVPE) technique, in which zinc and selenium vapors are supplied into hydrogen atmosphere with pressure of 10^<-6>-10^<-1> Torr. A high reproducibility in growth experiment was attained by utlizing the hydrogen RF plasma cleaning of substrate surface just before the epitaxial growth. The VI/II ratio during the growth was precisely controlled and high-purity undoped ZnSe layers, which exhibit low-temperature photoluminescence spectra dominated by the free exciton emission, were grown.Undoped ZnSe layers grown at 0.1 Torr were of high resistivities. The carrier concentration was increased by In doping and controlled in the range of 10^<16>-10^<18> cm^<-3>. When the growth pressure was 10^<-4> Torr, undoped layers showed low resistivities of several .cm. The growth pressure dependence of the layer resistivity indicates that the density of deep levels compensating the residual shallow donors varies with the growth pressure. An 2n-doped layer with room-temperature carrier concentration of 5x10^<15> cm^<-3> had a low-temperature electron mobility higher than 800 cm^2/v.sec. The high mobility indicates low densities of residual impurities. When NH_3 gas was introduced into the growth chamber, a new emission line due to recombination of excition bound to a shallow acceptor was observed at 2.793 eV, and the emission increased in intensity as the concentration of NH_3 was increased. The acceptor bound exciton emission intersity decreased with increasing the VI/II ratio, which ascertained that the emission was due to N acceptor at Se site.

采用低压气相外延(LPVPE)技术，在氢气气氛中以10℃~(-6)t；~(-6)t；-10^~(-1)托的压力供应锌和硒蒸气，在砷化镓衬底上生长了单晶硒化锌薄膜。通过在外延生长前对衬底表面进行氢射频等离子体清洗，获得了较高的生长重复性。通过精确控制生长过程中的Vi/Ii比，生长出了以自由激子发射为主的低温光致发光光谱的高纯度非掺杂ZnSe层，在0.1Torr生长的未掺杂层具有较高的电阻率。In掺杂提高了载流子浓度，并控制在10^&lt；16&gt；-10^&lt；18&gt；cm^&lt；-3&gt；当生长压力为10^~(-4)Torr时，未掺杂层表现出几个.cm的低电阻率。层电阻率对生长压力的依赖关系表明，补偿剩余浅施主的深能级密度随生长压力的变化而变化。室温载流子浓度为5×10~(-15)cm~(-3)的2N掺杂层的低温电子迁移率大于800 cm~(-2)/v.sec。高迁移率表明残留杂质密度较低。当向生长室中引入NH_3气体时，在2.793 eV处观察到一条新的发射线，这是由于激发态与浅受主结合而产生的，并且随着NH_3浓度的增加，发射线的强度增加。受主束缚的激子发射强度随着VI/II比的增加而减小，这表明该发射是由Se位上的N受体引起的。

项目成果

松本俊: Japanese Journal of Applied Physics. 26. L209-L211 (1987)

松本舜：日本应用物理学杂志。26.L209-L211（1987）

松本俊: Japanese Journal Applied Physics. 26. L1736-L1739 (1987)

松本舜：日本应用物理学杂志。26.L1736-L1739（1987）

Takashi Matsumoto: "Electrical and Luminescent Properties of In-Doped ZnSe Grown by Low-Pressure Vapor-Phase Epitaxy" Japanese Journal of Applied Physics. 26. 1736-1739 (1987)

Takashi Matsumoto：“低压气相外延生长的 In-Doped ZnSe 的电学和发光特性”，日本应用物理学杂志。

松本俊: Jpn.J.Appl.Phys.26. (1987)

松本舜：Jpn.J.Appl.Phys.26 (1987)。