Large and Single Crystal Growth of Ternary Compound Semiconductors

本研究工作是在单晶状态下生长大尺寸三元化合物半导体的目标下进行的。我们进行了数值分析，发展了三种新的晶体生长技术，并取得了一些良好的结果：1）用有限元法对InSb中Te杂质浓度分布进行了数值分析：从三元化合物半导体的成分控制出发，提出了一个生长界面的计算模型，并与InSb-Te系统生长实验中杂质浓度与生长速率的关系进行了比较，发现该关系是有效的。2）在引入超声振动的情况下，采用提拉法生长InSb-Te和InGaSb晶体：当超声振动引入熔体源时，InSb中具有高杂质浓度的小面区域从熔体源向熔体源的外围移动。 ...更多信息 中心In_xGa_ Sb晶体<1-x>在x = 0 ~ 0.10的范围内都可以生长，但随着x的增大，生长难度增大。3）旋转振动直拉法中杂质条纹的排除：由于三元化合物半导体晶体的大尺寸生长会导致晶体质量的下降，首次尝试了在InSb-Te系统中排除Te杂质条纹。通过向生长晶体引入旋转振动，生长速率波动消失，从而获得几乎恒定的扩展电阻分布，没有条纹。4）通过高速旋转的布里奇曼法生长三元化合物半导体晶体：通过在晶体生长过程中加入由于Bridgmann方法而产生的高速旋转，可以生长大尺寸的三元化合物半导体，例如InGaSb和InBiSb。直径约10毫米，长度约20毫米。少

This research work was made under the object of growing large-sized ternary compound semiconductors in the single crystalline state. We have done the numerical analysis and developed new three kinds of crystal growth techniques as described as follows, and consequently we have obtained several good results.1) Numerical analysis of the concentration distribution of Te impurity in InSb due to the limited element method: From the viewpoint of the composition control of ternary compound semiconductors, a computational model of the growth interface was proposed, and it was found to be available in comparison with the relation between the impurity concentration and the growth rate in the growth experiment of the InSb-Te system.2) InSb-Te and InGaSb crystal growth by the Czochralski method under the introduction of ultrasonic vibrations: When ultrasonic vibrations were introduced into the melt source, facet region with high impurity concentration in InSb shifted toward the periphery from the … More center. In In_xGa_<1-x>Sb, the crystal growth was possible in the range of x from 0 to 0.10, though the difficulty was increased with x. The increase of the output of vibrations helped the large and single crystal growth.3)Exclusion of impurity striations by the Czochralski method with rotational vibrations: As the large-sized crystal growth of ternary compound semiconductors was supposed to bring about the lowering of the quality, the exclusion of Te impurity striations in InSb-Te system was first tried. By introducing the rotational vibrations to a growing crystal, the growth rate fluctuation was vanished and as a result without striations almost constant spreading resistance profiles were obtained.4) Crystal growth of ternary compound semiconductors by the Bridgmann method with high speed rotation: By adding the high speed rotation during crystal growth due to the Bridgmann method, large-sized ternary compound semiconductors such as InGaSb and InBiSb were possible to grow. They were about 10 mm in diameter and around 20 mm in length. Less