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Large and Single Crystal Growth of Ternary Compound Semiconductors

三元化合物半导体的大单晶生长

基本信息

批准号：
61550226
负责人：
MASASHI kumagawa
金额：
$ 1.28万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

项目摘要

This research work was made under the object of growing large-sized ternary compound semiconductors in the single crystalline state. We have done the numerical analysis and developed new three kinds of crystal growth techniques as described as follows, and consequently we have obtained several good results.1) Numerical analysis of the concentration distribution of Te impurity in InSb due to the limited element method: From the viewpoint of the composition control of ternary compound semiconductors, a computational model of the growth interface was proposed, and it was found to be available in comparison with the relation between the impurity concentration and the growth rate in the growth experiment of the InSb-Te system.2) InSb-Te and InGaSb crystal growth by the Czochralski method under the introduction of ultrasonic vibrations: When ultrasonic vibrations were introduced into the melt source, facet region with high impurity concentration in InSb shifted toward the periphery from the … More center. In In_xGa_<1-x>Sb, the crystal growth was possible in the range of x from 0 to 0.10, though the difficulty was increased with x. The increase of the output of vibrations helped the large and single crystal growth.3)Exclusion of impurity striations by the Czochralski method with rotational vibrations: As the large-sized crystal growth of ternary compound semiconductors was supposed to bring about the lowering of the quality, the exclusion of Te impurity striations in InSb-Te system was first tried. By introducing the rotational vibrations to a growing crystal, the growth rate fluctuation was vanished and as a result without striations almost constant spreading resistance profiles were obtained.4) Crystal growth of ternary compound semiconductors by the Bridgmann method with high speed rotation: By adding the high speed rotation during crystal growth due to the Bridgmann method, large-sized ternary compound semiconductors such as InGaSb and InBiSb were possible to grow. They were about 10 mm in diameter and around 20 mm in length. Less

本研究工作是在生长大尺寸单晶态三元化合物半导体材料的目标下进行的。1)用有限元方法对InSb中Te杂质的浓度分布进行了数值分析：从三元化合物半导体成分控制的角度出发，提出了生长界面的计算模型，并与InSb-Te系生长实验中的杂质浓度与生长速率的关系进行了比较。2)在引入超声振动的情况下，用提拉法生长了InSb-Te和InGaSb晶体：当在熔体中引入超声波振动时，InSb中杂质浓度较高的小面区从…向外围移动再靠中间一点。在In_xGa_&lt；1-x&Gt；Sb中，x从0到0.10的范围内晶体生长是可能的，但随着x的增加，晶体生长的难度增大。振动输出的增加有利于大晶体和单晶的生长。3)用旋转振动提拉法排除杂质条纹：由于认为三元化合物半导体的大尺寸晶体生长会导致晶体质量下降，首次尝试在InSb-Te系统中排除Te杂质条纹。通过在生长的晶体中引入旋转振动，消除了生长速率的波动，获得了几乎恒定的无条纹扩展电阻分布。4)高速旋转布里奇曼法生长三元化合物半导体晶体：通过在晶体生长过程中加入布里奇曼法产生的高速旋转，可以生长出大尺寸的InGaSb和InBiSb等三元化合物半导体。它们的直径约为10毫米，长度约为20毫米。较少