Development of Determination of Crystallographic Orientations by Raman Scattering

本工作的目的是通过拉曼微探针偏振测量确定薄半导体薄膜，特别是硅薄膜的晶体取向。我们提出了一种拉曼散射法测定金刚石结构晶体中的晶体取向，这种方法可以快速、独特地测定，而且精度很高。在该方法中，对于两种不同偏振态的入射光，测量了作为散射光偏振态的函数的拉曼强度，并使用具有（100）、（110）和（111）表面的单晶硅样品作为测试样品。实验结果表明，晶体取向的测量精度可达2。用本技术测量了SiO_2涂层Si上激光再结晶硅膜的局域晶体取向。

The purpose of this work is to determine crystallographic orientations of thin semiconductor films, especially silicon films, by Raman microprobe polarization measurements. We present a method of Raman scattering determination of crystallographic orientations in crystals with the diamond structure which allows rapid and unique determination with high accuracy. In this method the Raman intensity is measured as a function of the polarization of the scattered light for two different polarizations of the incident light.Single crystal silicon samples with (100), (110) and (111) surfaces are used as test samples. The experimental result demonstrates that crystallographic orientations can be determined with an accuracy of 2 .Local crystallographic orientations in laser-recrystallized silicon films on SiO_2 coated Si have been determined by the present technique.