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Development of Determination of Crystallographic Orientations by Raman Scattering

拉曼散射测定晶体取向的进展

基本信息

批准号：
62550014
负责人：
NAKASHIMA S.
金额：
$ 1.34万
依托单位：
Osaka University Department of Applied Physics, Faculty of Engineering, Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1987
资助国家：
日本
起止时间：
1987 至 1988
项目状态：
已结题

项目摘要

The purpose of this work is to determine crystallographic orientations of thin semiconductor films, especially silicon films, by Raman microprobe polarization measurements. We present a method of Raman scattering determination of crystallographic orientations in crystals with the diamond structure which allows rapid and unique determination with high accuracy. In this method the Raman intensity is measured as a function of the polarization of the scattered light for two different polarizations of the incident light.Single crystal silicon samples with (100), (110) and (111) surfaces are used as test samples. The experimental result demonstrates that crystallographic orientations can be determined with an accuracy of 2 .Local crystallographic orientations in laser-recrystallized silicon films on SiO_2 coated Si have been determined by the present technique.

本工作的目的是通过拉曼微探针偏振测量来确定半导体薄膜，特别是硅薄膜的晶体取向。本文提出了一种用拉曼散射测定金刚石结构晶体中晶体取向的方法，它可以快速、唯一、高精度地确定晶体的取向。在该方法中，用具有(100)、(110)和(111)面的单晶硅样品作为测试样品，测量了两种不同偏振态入射光的拉曼强度与散射光偏振的函数关系。实验结果表明，晶体取向的测定精度可达2。用本方法测定了SiO_2衬底上激光再结晶硅膜的局部晶体取向。