Development of Determination of Crystallographic Orientations by Raman Scattering

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The purpose of this work is to determine crystallographic orientations of thin semiconductor films, especially silicon films, by Raman microprobe polarization measurements. We present a method of Raman scattering determination of crystallographic orientations in crystals with the diamond structure which allows rapid and unique determination with high accuracy. In this method the Raman intensity is measured as a function of the polarization of the scattered light for two different polarizations of the incident light.Single crystal silicon samples with (100), (110) and (111) surfaces are used as test samples. The experimental result demonstrates that crystallographic orientations can be determined with an accuracy of 2 .Local crystallographic orientations in laser-recrystallized silicon films on SiO_2 coated Si have been determined by the present technique.