Basic research on functional hybrid thin film growth processes by optical emission analysis

通过光发射分析进行功能混合薄膜生长过程的基础研究

• 批准号: 63550022
• 负责人: MURAYAMA Yoichi
• 金额: $ 1.22万
• 依托单位: TOYO University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550022/
• 关键词: optical emission analysis; hybrid thin film; プラズマ発光分析; 反応性イオンプレーティング; InN膜

Basic research on functional hybrid thin film growth processes by optical emission analysis.Recently, thin film formation techniques using low pressure plasma processes which are sputter, ion plating, plasma CVD and plasma polymerization have advanced. Ions, electrons, exited particles in these techniques show complicated behavior and were found to have a great influence on thin films properties. The purpose of the present work is to show the relationship between optical emission analysis (OEA system) and crystal stricture of the film formed by rf reactive ion plating.Emission spectra of plasma in the process of InN film growth is observed for OEA system in order to optical emission spectra of In and N_2 existed in the visible rays range. In the plasma system, N_2 gas pressure and rf power influenced chemical reaction of exited In and N atoms in the plasma of InN film growth process.The other hand, the crystal structure of InN film was investigated by X-ray diffraction and electron diffraction.The peak height of InN(101) face in diffraction pattern was observed to be strong in proportion to the number of the N^+ ion.It was clearly that the N^+ ion have more strong influence than the In^+ ion on InN crystal structure in the rf reactive ion plating.

利用光发射分析进行功能杂化薄膜生长过程的基础研究近年来，利用溅射、离子镀、等离子体CVD和等离子体聚合等低压等离子体工艺形成薄膜的技术取得了进展。离子、电子、激发态粒子在这些技术中表现出复杂的行为，对薄膜的性能有很大的影响。为了研究射频反应离子镀InN膜的光发射光谱与膜的晶体结构之间的关系，观察了OEA系统下InN膜生长过程中等离子体的发射光谱，以获得In和N_2在可见光区的光发射光谱。在等离子体系统中，N_2气压和射频功率影响InN薄膜生长过程中等离子体中In和N原子的化学反应，用X射线衍射和电子衍射研究了InN薄膜的晶体结构，发现InN（101）面的衍射峰高与N^+离子的数目成正比，说明N^+离子是InN（101）面的主要离子离子对InN晶体结构的影响比In^+离子更大。

项目成果

H.Kokai,Y.Sakamoto,K.Kashiwagi,T.Morikawa,S.Kuramochi,Y.Murayama: "Protection of Organic Materials Against Ultraviolet Rays by Ion-Plated Zinc-Oxide Layer" Japanese Journal of Applied Physics. Vol.27. L1390-L1391 (1988)

H.Kokai，Y.Sakamoto，K.Kashiwagi，T.Morikawa，S.Kuramochi，Y.Murayama：“离子镀氧化锌层保护有机材料免受紫外线影响”日本应用物理学杂志。