OPTICAL CHARACTERISTICS INVESTIGATION ON COMPOUND SEMICONDUCTOR NATIVE DEFECTS AND RELATED MATERIALS

化合物半导体本征缺陷及相关材料的光学特性研究

• 批准号: 63550023
• 负责人: MITA Yoh
• 金额: $ 0.9万
• 依托单位: Tokyo Engineering University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550023/
• 关键词: OPTICAL ABSORPTION CHARACTERISTICS; LUMINESCENCE CHARACTERISTICS; SEMI-INSULATING GaAs; INFRARED EMITTING PHOSPHORS; Er-DOPED FIBER; WATER VAPOR SENSOR; AMPLIFIED SPONTANEOUS EMISSION; III-V族化合物半導体; II-VI族化合物半導体; 固有欠陥

Investigations have been carried out for luminescence as well as optical absorption characteristics of several interesting materials including semi-insulating GaAs, infrared emitting phosphors and Er-doped silica glass fiber.It has been previously demonstrated that the native defects in semi-insulating GaAs can be characterized by recovery characteristics as well as bleaching and absorption characteristics. These kinds of characterizing procedures are being extended for examining two dimensional, spatial distribution characteristics. This research work is being continued.Systematic investigations on rare earth-activated, infrared emitting phosphors have been carried out. It has been shown that Er-activated phosphors having flouride lattices present fairly intense luminescence at 2.6 to 2.8um wavelength region. It has been demonstrated that these phosphors present simple and convenient detecting device for atmospheric water vapor sensor, if combined with GaAs:Si infrared light emitting diode and PbS photoconductive detector. Research activity is still continued for exploring longer wavelength emitting light materials.Examinations have been performed on amplified spontaneous emission characteristics in Er-doped, silica glass fiber. The measurements were carried out by using Ar ion laser as excitation source. It has been fairly established that the wavelength conversion processes from higher levels are not solely nonradiative decay process as previously postulated but considerably due to intermediate radiative decay process.

对半绝缘GaAs、红外荧光粉和掺铒石英玻璃光纤等材料的发光和光吸收特性进行了研究，发现半绝缘GaAs中的本征缺陷不仅具有恢复特性，而且具有漂白和吸收特性。这些类型的表征程序正在扩展到检查二维，空间分布特性。这项研究工作仍在继续，已对稀土激活的红外荧光粉进行了系统的研究。结果表明，Er激活的氟化物晶格荧光粉在2.6 ~ 2.8 μ m波长范围内有较强的发光。结果表明，这种荧光粉与GaAs：Si红外发光二极管和PbS光电导探测器相结合，可构成简单、方便的大气水汽传感器探测器件。目前仍在继续探索发射更长波长光的材料，对掺铒石英玻璃光纤的放大自发辐射特性进行了研究。测量是用氩离子激光器作激发源进行的。已经相当确定的是，从高水平的波长转换过程并不像以前假设的那样仅仅是非辐射衰变过程，而是相当大程度上归因于中间辐射衰变过程。

项目成果

三田陽: 応用物理学会昭和63年秋期講演会. 948 (1988)

Mita, Yo：日本应用物理学会 1988 年秋季会议 948 (1988)。

Yoh MITA: "EXTRINSIC PHOTOCONDUCTIVE CHARACTERISTICS OF SEMI-INSULATING GaAs CRYSTALS" J.Appl.Phys.61,pp.5325〜5329(1987). 61. 5325-5329 (1987)

Yoh MITA：“半绝缘 GaAs 晶体的外在光导特性”J.Appl.Phys.61，第 5325-5329 页（1987 年）61. 5325-5329 (1987)。

Y.MITA.K.OHATA and S.SHIONOYA: "WATER VAPOR DETECTION BY USING INFRARED-EMITTING PHOSPHORS" TECHNICAL DIGEST OF 9th SENSOR SYMPOSIUM. (1990)

Y.MITA.K.OHATA 和 S.SHIONOYA：“使用红外发射磷光体进行水蒸气检测”第九届传感器研讨会技术摘要。

Yoh MITA: "BLEACHING AND RECOVERY CHARACTERISTICS OF OPTICAL ABSORPTION BANDS IN SEMI-INSULATING GaAs CRYSTALS" J.Appl.Phys.64,pp.797〜801(1988). 64. 797-801 (1988)

Yoh MITA：“半绝缘 GaAs 晶体中光学吸收带的漂白和恢复特性”J.Appl.Phys.64，第 797-801 页（1988）64. 797-801（1988）。

Y.MITA,K.OHATA and S.SHIONOYA: "WATER VAPOR SENSOR BY USING INFRARED-EMITTING PHOSPHORS" TECHNICAL DIGEST OF 9th SENSOR SYMPOSIUM(MAY,1990 TOKYO).

Y.MITA、K.OHATA 和 S.SHIONOYA：“使用红外发射磷光体的水蒸气传感器”第九届传感器研讨会技术摘要（1990 年 5 月，东京）。