Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN template

阐明在高质量半极性 InGaN 模板上制造的发光二极管的光电发光特性

• 批准号: 24760012
• 负责人: OKADA Narihito
• 金额: $ 2.91万
• 依托单位: Yamaguchi University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-24760012/
• 关键词: 発光ダイオード; 窒化ガリウムインジウムテンプレート; 偏光特性; LED; 非極性面; InGaN; 高効率化; seimpolar; Nitiride; InGaN underlying layer

This research project aims to fabricate and evaluate light-emitting diodes (LEDs) grown on a semipolar InGaN template enabling to realize state-of-the-art LED. Efficiency of a liquid crystal display using LEDs and laser diodes (LDs) can be improved by controlling light-polarization characteristics; it was revealed that the semipolar InGaN templates can control the light-polarization for the LEDs and LDs. Although LEDs recently have a problem of efficiency droop at a high-injection current, InGaN template is also effective to enhance the light output power of LED. The light output power of the LED fabricated on the InGaN template is approximately 6 times higher than that of a conventional LED at a high injection current.

本研究项目旨在制作和评估生长在半极性InGaN模板上的发光二极管(LED)，以实现最先进的LED。采用LED和激光二极管(LD)的液晶显示器可以通过控制光偏振特性来提高效率；研究表明，半极性InGaN模板可以控制LED和LD的光偏振。虽然目前LED在高注入电流下存在效率下降的问题，但InGaN模板对提高LED的光输出功率也是有效的。在高注入电流下，InGaN模板上制备的LED的光输出功率大约是传统LED的6倍。

项目成果

Improvement in semipolar {11-22} GaN grown by Hydride Vapor Phase Epitaxy

氢化物气相外延生长半极性{11-22} GaN 的改进

• 发表时间: 2013
• 作者: Y. Hashimoto;H. Furuya;M. Ueno;K. Yamane;N. Okada;K. Tadatomo
• 通讯作者: K. Tadatomo

{11-22} Semipolar Light Emitting Diodes Using Relaxed Thick InGaN Layers with Various In Compositions and Thickness

{11-22} 使用不同成分和厚度的松弛厚 InGaN 层的半极性发光二极管

• 发表时间: 2013
• 作者: N. Okada;K. Uchida;K. Yamane;and K. Tadatomo
• 通讯作者: and K. Tadatomo

只友研究室

忠友实验室

Analysis of surface potential of GaN layers by Kelvin Force Microscopy

通过开尔文力显微镜分析 GaN 层的表面电势

• 发表时间: 2013
• 作者: N. Okada;T. Yamamoto;K. Yamane;K. Tadatomo
• 通讯作者: K. Tadatomo

Growth of Free Standing Semipolar GaN on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

通过氢化物气相外延在图案化蓝宝石衬底上生长独立式半极性 GaN

• 发表时间: 2012
• 作者: Kasahara;R.;横井裕一,樋口剛;Shao Huaiyu;K. Tadatomo
• 通讯作者: K. Tadatomo