Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN template

本研究计划旨在制作及评估半极性InGaN模板上生长的发光二极管（LED），以实现最先进的LED。通过控制光偏振特性可以提高使用LED和激光二极管（LD）的液晶显示器的效率;揭示了半极性InGaN模板可以控制LED和LD的光偏振。虽然LED最近存在高注入电流下效率下降的问题，但InGaN模板也可以有效地提高LED的光输出功率。在高注入电流下，在InGaN模板上制造的LED的光输出功率比常规LED高约6倍。

This research project aims to fabricate and evaluate light-emitting diodes (LEDs) grown on a semipolar InGaN template enabling to realize state-of-the-art LED. Efficiency of a liquid crystal display using LEDs and laser diodes (LDs) can be improved by controlling light-polarization characteristics; it was revealed that the semipolar InGaN templates can control the light-polarization for the LEDs and LDs. Although LEDs recently have a problem of efficiency droop at a high-injection current, InGaN template is also effective to enhance the light output power of LED. The light output power of the LED fabricated on the InGaN template is approximately 6 times higher than that of a conventional LED at a high injection current.