Elucidation of optical and electrical luminescence characteristics of light-emitting diodes fabricated on high-quality semipolar InGaN template

该研究项目旨在制造和评估在半极性InGaN模板上生长的发光二极管（LED），从而实现最先进的LED。通过控制光偏振特性可以提高led和激光二极管（ld）液晶显示的效率；揭示了半极性InGaN模板可以控制led和ld的光偏振。虽然目前LED在高注入电流下存在效率下降的问题，但InGaN模板也能有效地提高LED的光输出功率。在高注入电流下，在InGaN模板上制作的LED的光输出功率大约是传统LED的6倍。

This research project aims to fabricate and evaluate light-emitting diodes (LEDs) grown on a semipolar InGaN template enabling to realize state-of-the-art LED. Efficiency of a liquid crystal display using LEDs and laser diodes (LDs) can be improved by controlling light-polarization characteristics; it was revealed that the semipolar InGaN templates can control the light-polarization for the LEDs and LDs. Although LEDs recently have a problem of efficiency droop at a high-injection current, InGaN template is also effective to enhance the light output power of LED. The light output power of the LED fabricated on the InGaN template is approximately 6 times higher than that of a conventional LED at a high injection current.