The Effects of Atomic Hydrogen on Molecular Beam Epitaxy of GaAs and its Application to Selective Growth
原子氢对GaAs分子束外延的影响及其在选择性生长中的应用
基本信息
- 批准号:01550238
- 负责人:
- 金额:$ 1.41万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (C)
- 财政年份:1989
- 资助国家:日本
- 起止时间:1989 至 1990
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The target of this research is to reveal the effects of atomic hydrogen irradiation on the molecular beam epitaxy of GaAs and applying the results to the selective epitaxy, which means the selective deposition on the GaAs substrate and no deposition on the masked area covered by SiO_2 or Si_3N_4.The expected effects are as follows.(1) The change in the anisotropic lateral growth rate.(2) The enhancement of surface migration of Ga, Al and As atoms.(3) The control of the adsorption and desorption of Ga, Al and As atoms.(4) The surface cleaning by eching the oxide.Firstly, the anisotropic lateral growth is examined and the following results were obtained. There is large anisotropy in latera growth rate of GaAs and AlAl on (001) GaAs grown by MBE. With increasing the substrate temperature or decreasing As_4 pressure, the growth rate along [110] increases. From these results and the value of the activation energy of GaAs lateral growth rate along [1140], it is concluded that the lateral gro … More wth along [1140] is limited by surface diffusion of Ga and Al. On the other hand, the growth rate along [110] is very small. Thelimiting process of this small growth rate is the small diffusion constant of Ga along [110] and/or the inactive Ga terminated steps.The obtained effects of atomic hydrogen irradiation are as follows.(1) Low-temperature cleaning of GaAs substrate by atomic hydrogen irradiation was achieved. Atomic hydrogen was provides by dissociation of hydrogen gas, which was carried out in a simple cracking cell with a 1500^゚C tungsten filament, Auger electron spectroscopy showed that carbon was removed at 200^゚C and oxygen was removed at 400^゚C by 30-min atomic hydrogen irradiation. The surface cleaning of GaAs was confirmed by the change of RHEED pattern from halo to streak after the hydrogen irradiation.(2) The lateral growth rate along [001] is decreased by few percent by irradiating the atomic hydrogen. On the other hand the rate along [1140] is reduced to - 30 % of the original rate by the atomic hydrogen irradiation. The eching of GaAs by the atomic hydrogen is considered as the origin of this fact.(3) The temperature of the selective growth was lowered to 580^゚C by irradiating the atomic hydrogen during the growth. The eching reaction by atomic hydogen may contribute to the lowering of the selective-growth temperature. Less
本研究的目的是揭示原子氢辐照对GaAs分子束外延的影响,并将其应用于选择性外延,即在GaAs衬底上选择性淀积,而在SiO_2或Si_3N_4覆盖区不淀积。(1)各向异性横向生长速率的变化。(2)Ga、Al和As原子表面迁移的增强。(3)Ga、Al和As原子吸附和脱附的控制。(4)通过埃兴氧化层进行表面清洗。首先,研究了横向各向异性生长,得到以下结果。在MBE生长的(001)GaAs上,GaAs和AlAl的横向生长速率存在较大的各向异性。随着衬底温度的升高或As_4气压的降低,沿着[110]的生长速率增加。从这些结果和GaAs横向生长速率沿着[1140]的激活能值可以得出结论, ...更多信息 沿着[1140]的生长受到Ga和Al的表面扩散的限制。另一方面,沿沿着[110]的生长速率非常小。这种小的生长速率的限制过程是Ga沿着[110]和/或惰性Ga终止台阶的小的扩散常数。(1)利用氢原子辐照实现了GaAs衬底的低温清洗。原子氢是通过氢气的离解提供的,这是在一个简单的裂解池中用1500^C的钨丝进行的。俄歇电子能谱表明,通过30分钟的原子氢照射,在200^C下除去了碳,在400^C下除去了氧。氢辐照后,GaAs表面的RHEED谱图由晕变为条纹,证实了GaAs表面的清洁。(2)通过辐照原子氢,沿着[001]的横向生长速率降低了几个百分点。另一方面,通过原子氢辐照,沿[1140]的速率沿着降低至原始速率的约30%。氢原子对砷化镓的埃兴被认为是这一事实的起源。(3)通过在生长期间照射原子氢,将选择性生长的温度降低到580 ℃。氢原子的埃兴反应可能有助于降低选择性生长温度。少
项目成果
期刊论文数量(22)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T. Sugaya et al.: ""Anisotropic Lateral Growth of GaAs and AlAs by Molecular Beam Epitaxy"" Extended Abstracts (The 50th Autumn Meeting, 1989) ; The Japan Society of Applied Physics. 29p-W-7
T. Sugaya 等人:“通过分子束外延实现 GaAs 和 AlAs 的各向异性横向生长”扩展摘要(第 50 届秋季会议,1989 年);
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T. Sugaya et al.: ""Effect of Atomic Hydrogen Irradiation on MBE Growth of GaAs (II)"" Extended Abstracts (The 38th Spring Meeting, 1991) ; The Japan Society of Applied Physics and Related Societies. 28a-SZK-1
T. Sugaya 等人:“原子氢辐照对 GaAs (II) 的 MBE 生长的影响”扩展摘要(第 38 届春季会议,1991 年);
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菅谷 武芳: "MBE法におけるGaAS,AlAsの横方向成長速度の異方性" 第50回応用物理学会学術講演会講演予稿集. 269- (1989)
Takeyoshi Sugaya:“MBE法中GaAS和AlAs横向生长速率的各向异性”日本应用物理学会第50届年会记录269-(1989)。
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菅谷武芳: "MBE法による横方向成長速度の異方性(II)" 第37回応用物理学関係連合講演会 講演予稿集. (1990)
Takeyoshi Sugaya:“MBE方法的横向生长率的各向异性(II)”第37届应用物理学会会议记录(1990)。
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菅谷 武芳: "MBE法による横方向成長速度の異方性(II)" 第37回応用物理学関係連合講演会講演予稿集. 288- (1990)
Takeyoshi Sugaya:“MBE方法的横向生长率的各向异性(II)”第37届应用物理联席会议论文集288-(1990)。
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