Research on Development of Thermometers for Cryogenic Temperature in Magnetic fields
Research on Development of Thermometers for Cryogenic Temperature in Magnetic fields
批准号:
02640244
负责人:
YOSHIZAWA Masahito
金额:
$1.02万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
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英文摘要
Zr-N sputtered films, which have been drawn attention as the best candidate for the thermometers at cryogenic temperature with magnetic fields, have been investigated by electrical and acoustical measurements. The results obtained in this research project are summarized as below.1. Classification of Zr-N films : Zr-N films fabricated with various sputtering conditions ; substrate temperature and nitrogen partial pressure, can be classified and divided into two groups by the resistance ratio. between room and helium temperatures.2. Origin of small magnetoresistance : Magnetoresistance(MR)of Zr-N films is investigated by the measurements in the field up to 30T. It is found that MR of Zr-N consists of various contributions from quantum interference, spin-orbit and interaction effects. The small MR in weak field arises from accidental cancellation of these contributions. The possibility of occurrence of ferromagnetism was also suggested.3. Universal behavior in temperature dependence of electrical conductivity : We present attempts for finding the universal function which describes T dependence of conductivity. The conductivity sigma is described as sigma=sigma_0+AAOT for major parts of samples at high temperatures, and as sigma=sigma_0+A(T-T_0)^<gamma> at low temperatures. The relations among gamma, A, etc. are found.4. Discovery of novel elastic anomalies : The velocity of surface acoustic wave shows remarkable anomalies as a function of temperature. The strongly localized sample with high resistance ratio shows a broad minimum at above 300 K and a softening toward low temperature. The weakly localized sample shows sole a broad minimum at 15 K. These elastic anomalies and the relation to the localization are discussed based on two-level-system.From the series of investigations, the physical properties of Zr-N films has been made clear. These results would lead the successful development of then-nometers for the use at cryogenic temperature in magnetic field.
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M.Yoshizawa: "Novel Elastic Softening in Zr-N films"
M.Yoshizawa:“Zr-N 薄膜中的新型弹性软化”
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通讯作者:
M.Yoshizawa: "Temperature and magnetic field dependence of resistance in ZrーN sputtered films" Physica B. 165&166. 293-294 (1990)
M. Yoshizawa:“Zr-N 溅射薄膜中电阻的温度和磁场依赖性”Physica B. 165&166 (1990)。
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吉澤 正人: "ZrN系薄膜温度素子の磁気抵抗に関する研究" 東北大学金属材料研究所超伝導材料開発施設平成元年度年次報告. 262-265 (1991)
吉泽正人:“ZrN基薄膜热元件的磁阻研究”东北大学材料研究所超导材料开发设施年度报告1989。262-265(1991)
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通讯作者:
吉澤 正人: "ZrN系薄膜温度素子の磁気抵抗に関する研究" 東北大学金属材料研究所 超伝導材料開発施設・平成元年度年次報告. 262-265 (1990)
吉泽正人:“ZrN基薄膜热元件的磁阻研究”东北大学材料研究所,超导材料开发设施年度报告1989。262-265(1990)
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作者:
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通讯作者:
吉澤 正人: "ZrN系薄膜温度素子の磁気抵抗に関する研究" 東北大学金属材料研究所超伝導材料開発施設平成2年度年次報告. 320-324 (1992)
吉泽正人:“ZrN基薄膜热元件的磁阻研究”东北大学材料研究所超导材料开发设施年度报告1990.320-324(1992)
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共 16 条
Physical Properties of Actinoid compounds explored by ultrasonic measurements
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批准号:22654037
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$1.97万
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财政年份:2010
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负责人:YOSHIZAWA Masahito
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依托单位:
Insulator-Metal Transition and Elastic anomalies of ET organic conductors.
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批准号:13640344
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.24万
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财政年份:2001
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负责人:YOSHIZAWA Masahito
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依托单位:
Acoustic Phonon Properties of (BEDT-TTF) -based organic superconductors
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批准号:08454087
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.54万
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财政年份:1996
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负责人:YOSHIZAWA Masahito
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依托单位:
Ultrasonic investigation on BEDT-TTF-based superconductors
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批准号:05640397
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.15万
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财政年份:1993
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负责人:YOSHIZAWA Masahito
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依托单位:
海外基金