Simulation of Defect Processes Induced by Electronic Excitation
电子激励引起的缺陷过程模拟
基本信息
- 批准号:03045026
- 负责人:
- 金额:$ 3.07万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for international Scientific Research
- 财政年份:1991
- 资助国家:日本
- 起止时间:1991 至 1993
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Relaxation of an exciton in the bulk of alkali halides and of an excited F center on the (100) surface of alkali halides are simulated using an ab initio quantum mechanical computer code.The two-dimensional adiabatic potential energy surfaces (APES) of a F center on the NaCl (100) surface at the ground and excited states, for the perpendicular and parallel motion of an alkali atom neighboring the F center was obtained by optimizing the configuration at the excited state. It is shown that there is a potential barrier for the emission of the alkali atom at the excited state. The height of the barrier and the separation between the APES's for the ground state and excited state are found to be dependent on the direction of the emission. It appears that the emission is induced by the non-radiative transitions from the excited state to the ground state, for which a thermal potential barrier should be overcome. The result of the calculation is in accordance with the recent experimental results obtained in our laboratory.The optical transition of the self-trapped hole and the H center, both of which consist of the halogen molecular ion, are studied by taking the configuration interaction into account. Without the configuration interaction, both the sigma and pi transition energies of the H center is found to be higher than the corresponding transition energies of the self-trapped hole, because of the smaller halogen-halogen distance. The sigma transition energy is found to be diminished by a relatively large configuration interaction between two sigma polarized transitions, while the pi transition is affected little by the configuration interaction. The result is in accordance with the experimental observation carried out recently in our laboratory.
用量子力学从头算程序模拟了碱金属卤化物中激子的弛豫过程和碱金属卤化物(100)面上F心的弛豫过程,计算了NaCl(100)面上F心基态和激发态的二维绝热势能面,通过优化激发态构型,得到了邻近F中心的碱原子垂直和平行运动的理论解。结果表明,碱金属原子在激发态的发射存在势垒。势垒的高度和APES的基态和激发态之间的分离被发现是依赖于发射的方向。看来,发射是由非辐射跃迁从激发态到基态,这是一个热势垒应克服诱导。计算结果与实验室最近的实验结果相一致.考虑组态相互作用,研究了卤素分子离子的自陷空穴和H心的光学跃迁.在没有组态相互作用的情况下,由于卤素-卤素距离较小,H中心的sigma和pi跃迁能量均高于自陷空穴的相应跃迁能量.发现两个σ极化跃迁之间的相对大的组态相互作用会降低σ跃迁能量,而π跃迁受组态相互作用的影响很小。这一结果与本实验室最近进行的实验观察相一致。
项目成果
期刊论文数量(4)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
V. E. Puchin, S. L. Shluger and N. ITOH: "Theoretical Studies of Atomic Emission and Defect Formation by Electronic" Phys. Rev. B.
V. E. Puchin、S. L. Shluger 和 N. ITOH:“电子发射和缺陷形成的理论研究”物理。
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- 影响因子:0
- 作者:
- 通讯作者:
V.E.Puchin: "Model of self-trapped excitons in alkali halides" Physical review B. 47. 6226-6240 (1993)
V.E.Puchin:“碱金属卤化物中自陷激子模型”物理评论 B. 47. 6226-6240 (1993)
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- 影响因子:0
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V.E.Puchin: "Theoretical study of Na-atom emission from NaCl (100) surfaces" Physical review B. 49(in print). (1994)
V.E.Puchin:“NaCl (100) 表面钠原子发射的理论研究”物理评论 B. 49(印刷中)。
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- 期刊:
- 影响因子:0
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- 通讯作者:
V. E. Puchin, A. L. Shluger K. TANIMURA and N. ITOH: "On the Model of the Self-Trapped Excitions in Alkali Halides" Phys. Rev. B.
V. E. Puchin、A. L. Shluger K. TANIMURA 和 N. ITOH:“关于碱卤化物中自陷激发的模型” Phys。
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ITOH Noriaki其他文献
ITOH Noriaki的其他文献
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{{ truncateString('ITOH Noriaki', 18)}}的其他基金
Photo-induced Defect Formation and Structural change of Amorphous Silicon Dioxide
非晶二氧化硅的光致缺陷形成和结构变化
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08640431 - 财政年份:1996
- 资助金额:
$ 3.07万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Atomic Processes Induced by Electronic Excitation in Solids
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62065003 - 财政年份:1987
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60880024 - 财政年份:1985
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$ 3.07万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
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