Development of toroidal plasma sputtering apparatus for depositing films with excellent properties
开发出用于沉积具有优异性能的薄膜的环形等离子体溅射装置
基本信息
- 批准号:03555058
- 负责人:
- 金额:$ 7.62万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Developmental Scientific Research (B)
- 财政年份:1991
- 资助国家:日本
- 起止时间:1991 至 1992
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
A New type of sputtering method which can form a stable toroidal plasma has been developed in order to prepare Al films with homogeneous and dense structure and excellent properties on the plasma-free substrates.A toroidal plasma (TP) sputtering apparatus with a pair of targets has been developed in order to deposit the multilayers. The magnetic field was induced by the NdFeB permanent magnet.At first, dc discharge and sputtering characteristics were investigated by using a planar ring target of Al with a purity of 99.999%. Ar gas was used as a sputtering gas. In the case of the permanent magnet attached behind the target, the applied voltage was lower to 300V at Ar gas pressure of 0.5mTorr.The structure and the properties of Al films have been investigated. In the films with the thickness below 0.5 mum, the film surface was extremely smooth and its reflectivity was reached to 90%. The as-deposited films were composed of fcc phase crystallites with Al (111), Al (200) and Al (200) planes normal to the film plane.The resistivity of the as-deposited films decreased from 5 to 2.5 muOMEGA.cm with increasing the film thickness from 0.07 to 1 mum. On the other hand, that increased from 2.5 to 5 muOMEGA.cm with increasing the Ar gas pressure from 0.5 to 10mTorr.Accordingly, this method may be useful for depositing the aluminum with a smmoth Accordingly, this method may be useful for depositing the aluminum with a smooth and flat surface and homogeneous and dense structure.
为了在无等离子体衬底上制备结构均匀致密、性能优良的铝膜,提出了一种新型的能形成稳定的环形等离子体的溅射方法。研制了一种具有一对靶的环形等离子体溅射装置,用于沉积多层膜。磁场由钕铁硼永磁体感应产生。首先,采用纯度为99.999%的平面环形靶材,研究了直流放电和溅射特性。氩气被用作溅射气体。在目标体后面附着永磁体的情况下,在0.5mTorr的氩气压力下,施加电压降至300V。研究了铝膜的结构和性能。在厚度小于0.5 mm的薄膜中,薄膜表面非常光滑,反射率达到90%。沉积膜由Al(111)、Al(200)和Al(200)三面垂直于膜面的fcc相晶组成。沉积膜的电阻率由5 μ ω降至2.5 μ ω。随着膜厚从0.07到1 μ m的增加,膜厚度增加。另一方面,从2.5个增加到5个。氩气压力从0.5 mtorr增加到10mTorr。因此,本方法可用于沉积具有光滑表面的铝。因此,本方法可用于沉积具有光滑平坦表面和均匀致密结构的铝。
项目成果
期刊论文数量(15)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Takashi KAWANABE: "Preparation of Amorphous Carbon Films as Protective Layer by FTS System" Materials Science and Engineering. A134. 1296-1300 (1991)
Takashi KAWANABE:“利用FTS系统制备非晶碳膜作为保护层”材料科学与工程。
- DOI:
- 发表时间:
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- 影响因子:0
- 作者:
- 通讯作者:
Takakazu Takahashi: "Preparation of amorphous Co-Zr films by improved magnetron Sputtering with effective plasma confinement" Ferrites:The Proceedings of the 6th International Conference on Ferrites. 1. (1993)
Takakazu Takahashi:“通过改进的磁控溅射和有效等离子体限制制备非晶钴锆薄膜”铁氧体:第六届国际铁氧体会议记录。
- DOI:
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- 影响因子:0
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Takakazu TAKAHASHI: "Magnetic and Crystallographic Characteristics of Co-Cr Layers with Al Ultra-thin Interlayers" Journal of The Magnetics Society of Japan. 15,Suppl.,No.S2. 653-656 (1991)
Takakazu TAKAHASHI:“具有 Al 超薄中间层的 Co-Cr 层的磁性和晶体学特性”日本磁学学会杂志。
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- 发表时间:
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- 影响因子:0
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Takakazu TAKAHASHI: "Effectiveness of Magnetic Field Perpendicular to Co-Cr Target in TP Type Sputtering" Journal of The Magnetics Society of Japan. 15,Suppl.,No.S2. 921-925 (1991)
Takakazu TAKAHASHI:“TP 型溅射中垂直于 Co-Cr 靶材的磁场的有效性”日本磁学学会杂志。
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- 影响因子:0
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Takakazu Takahashi: "A Study of Toroidal Plasma Sputtering Method for Mass Production of Co-Cr Films" Ferrites:Proceedings of the Sixth International Conference on Ferrites. (1993)
Takakazu Takahashi:“用于大规模生产钴铬薄膜的环形等离子体溅射方法的研究”铁氧体:第六届国际铁氧体会议记录。
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- 影响因子:0
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TAKAHASHI Takakazu其他文献
TAKAHASHI Takakazu的其他文献
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{{ truncateString('TAKAHASHI Takakazu', 18)}}的其他基金
Preparation of new visible-light sensitive photocatalyst activated with different hole-electron charge separations
不同空穴电子电荷分离活化的新型可见光敏感光催化剂的制备
- 批准号:
21510082 - 财政年份:2009
- 资助金额:
$ 7.62万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Degradation of environmental hormone by visible light active double layer photocatalyst
可见光活性双层光触媒降解环境激素
- 批准号:
18510070 - 财政年份:2006
- 资助金额:
$ 7.62万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Preparation and properties of new magnetic recording media
新型磁记录介质的制备及性能
- 批准号:
03452153 - 财政年份:1991
- 资助金额:
$ 7.62万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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