Studies of metal-semiconductor transition by using a newly developed desk-top-type high-rate sputtering apparatus

使用新开发的台式高速溅射装置研究金属-半导体转变

• 批准号: 03555140
• 负责人: MIZUTANI Uichiro
• 金额: $ 9.47万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03555140/
• 关键词: amorphous; desk-top-type sputtering apparatus; metal-semiconductor transition; 金属一半導体相転移; 超高速スパッタ装置; 中性子回折; 低温比熱; V-Si

Major results obtained in the last two years are summarized below.1. A desk-top-type DC high-rate sputtering apparatus is designed and constructed with the following concepts : a target is only 30 mm in diameter and, hence, is small enough to be prepared by arc-melting in our laboratory and an amorphous film as thick as 0.5 mm can be deposited within 3 days in a continuous automatic operation mode. The construction of the apparatus has completed at the end of the first year of this project, March 1991.2. Its performance has been tested in 1992. After various adjustments and test, we have reached a stage which fulfills all of our originally proposed requirements.3. The amorphous V_<50>Si_<50> films of 0.3 mm thick can be formed using this newly built sputtering apparatus. The atomic structure has been investigated by X-ray and neutron diffractions. The results are now subjected to a comparison with the data for amorphous alloys synthesized by other techniques like mechanical alloying. Measurements of the low-temperature specific heat and the electrical resistivity have also started. More data are being accumulated.4 The electron transport mechanism of metallic glasses and quasicrystals in the metal-semiconductor regime has been investigated. We could analyze all data consistently in a unified picture, using as critical parameters the electron diffusion coefficient D and the so called g-factor, which is defined as the ratio of the density of states at the Fermi level over the corresponding free electron value. It is also realized that further accumulation of data about the atomic and electronic structures near the metal-insulator transition regime is of urgent necessity. Our newly built apparatus will promise us to furnish these fundamental data.

过去两年取得的主要成果概述如下。本文介绍了一台台式直流高速溅射装置的设计和结构，它的靶直径仅为30 mm，可以在本实验室用电弧熔炼法制备，在连续自动操作模式下，可在3天内沉积厚度为0.5 mm的非晶薄膜。该装置的建造已于1991年3月这一项目的第一年年底完成。它的性能已于1992年进行了测试。经过各种调整和测试，我们已经达到了一个阶段，满足我们最初提出的所有要求。利用<50><50>该溅射装置可以制备出厚度为0.3mm的非晶V_ Si_2薄膜。用X射线衍射和中子衍射研究了原子结构。现在的结果进行比较与其他技术，如机械合金化合成的非晶合金的数据。低温比热和电阻率的测量也已开始。更多的数据正在积累中。4金属玻璃和准晶在金属-半导体体系中的电子输运机制已经被研究。我们可以在一个统一的图像中一致地分析所有数据，使用电子扩散系数D和所谓的g因子作为关键参数，g因子被定义为费米能级的态密度与相应的自由电子值的比值。人们还认识到，进一步积累有关金属-绝缘体过渡区附近的原子和电子结构的数据是迫切需要的。我们新建的仪器将保证我们提供这些基本数据。

项目成果

U.Mizutani: "Electron transport in non-periodic metallic systems : amorphous alloys and quasicrystals" physica Status Solidi(b). 176. (1993)

U.Mizutani：“非周期金属系统中的电子传输：非晶态合金和准晶体”物理学 Status Solidi(b)。

U.MIZUTANI: "Elictron transport in non-periodic metallic systems:amorphous alloys and quasicrystals" physics Status Solidi(b). 176. 1-22 (1993)

U.MIZUTANI：“非周期金属系统中的电子输运：非晶合金和准晶体”物理学 Status Solidi(b)。

U.Mizutani: "Electron transport in non-periodic metallic systems:amorphous alloys and quasicrystals" Phys.stat.sol.(b). 176. 1-22 (1993)

U.Mizutani：“非周期金属系统中的电子传输：非晶合金和准晶体”Phys.stat.sol.(b)。

U.Mizutani: "Electron transport in non-periodic systems including amorphous metals and quasicrystals" presented at NEC Symposium (Karuezawa,October11-15,Journal of Materials Science and Engineering B 1992. (1993)

U.Mizutani：“非周期系统中的电子传输，包括非晶金属和准晶体”在 NEC 研讨会上发表（轻井泽，10 月 11-15 日，材料科学与工程杂志 B 1992 年。（1993 年）

T.Fukunaga: "Atomic Structure of V-Si amorphous alloys prepared by DC sputtering" J.Non-Crystalline Solids.

T.Fukunaga：“直流溅射制备的 V-Si 非晶合金的原子结构”J.Non-Crystalline Solids。