THE METHODS TO AVOID THE FORMATION OF METALLIC SILICIDE AT THE INTERFACE OF METAL/SILICON NITRIDE, AND THEIR APPLICATION FOR JOININGS

避免金属/氮化硅界面形成金属硅化物的方法及其在连接中的应用

基本信息

  • 批准号:
    03650562
  • 负责人:
  • 金额:
    $ 1.34万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1991
  • 资助国家:
    日本
  • 起止时间:
    1991 至 1992
  • 项目状态:
    已结题

项目摘要

THE KINETICS AND MECHANISM OF HIGH TEMPERATURE REACTIONS OF METALS WITH SILICON NITRIDE WERE INVESTIGATED. IT WAS THE PURPOSE OF THE PRESENT INVESTIGATION TO DESCRIBE THE CONDITIONS TO FORM NO BRITTLE PRODUCTS AT THE INTERFACE OF METAL/SILICON NITRIDE. THE PAUCITY OF REPORTS ON MECHANICAL PROPERTIES OF SOME METAL SILICIDES AND THE SOLID SOLUTIONS OF METAL AND SILICON SYSTEMS PROMPTED US TO INVESTIGATE THEM. MECHANICAL STRENGTH, YOUNG'S MODULUS AND LINEAR THERMAL EXPANSION COEFFICIENTS OF THE SILICIDES AND SOLID SOLUTIONS WERE MEASURED. BECAUSE THE SOLID SOLUTIONS WERE DUCTILE THEY APPEARED TO BE SUITABLE FOR JOINING. USING PLATE LIKE SAMPLES OF METALS AND SILICON NITRIDE, THE REACTION LAYERS WERE OBSERVED. IN THE CASE OF NICKEL, ONLY A SOLID SOLUTION LAYER WAS FORMED WITHOUT ANY SILICIDES AT 1273 K AND 1373 K. METALS SILICIDE LAYERS WERE FORMED IN THE CASES OF IRON AND COBALT EVEN AT 1173 K. THE SILICON CONTENT OF NICKEL SOLID SOLUTION WERE VERY LOW AND ITS DISTRIBUTION WAS UNIFORM. AND THE REACTION KINETICS OBEYED THE LINEAR RATE LAW. THUS, THE RATE DETERMINING STEP WAS THE DECOMPOSITION REACTION OF SILICON NITRIDE. THE REACTION RATE CONSTANT CAN BE EXPRESSED AS FOLLOWS: k(ms^<-1>) = 2.0 x 10^<-4> exp(-165kJmol^<-1>/RT). USING POWDERED METAL-SILICON NITRIDE MIXTURES, THE REACTION BEHAVIORS WERE OBSERVED BY MEANS OF MEASUREMENTS OF THE LIBERATED NITROGEN DURING THE REACTIONS. THE RESULTS OF THE EXPERIMENTS AGREED APPROXIMATELY WITH THOSE OF BLOCK SAMPLES. FURTHERMORE, THE ALLOYING ELEMENTS SUCH AS ALUMINUM, TITANIUN AND CHROMIUM IN NICKEL ALLOY PROMOTED THE DECOMPOSITION OF SILICON NITRIDE. BUT, THE LARGE AMOUNTS OF THEM HAD A BAD EFFECT ON THE SOLID-SOLUTION FORMATIONS TO FORM NITRIDE AND SILICIDE OF THE ALLOYING ELEMENTS.
阐述了金属与氮化硅高温反应的动力学和机理。本研究的目的是描述在金属/氮化硅界面处不形成脆性产物的条件。金属硅化物的力学性能以及金属和硅体系的固溶体的报道很少,促使我们对它们进行研究。测定了硅化物和固溶体的机械强度、杨氏模量和线膨胀系数。因为固溶体是延展性的,所以它们看起来适合于连接。使用金属和氮化硅的板状样品,观察反应层。在1273 K和1373 K下,镍只形成固溶体层,没有硅化物。铁和钴在1173 K时也形成了金属硅化物层。镍固溶体中硅含量很低,分布均匀。反应动力学符合线性速率定律。因此,速率减慢步骤是氮化硅的分解反应。反应速率常数可表示为:k(ms^<-1>)= 2.0 × 10^<-4>exp(-165kJ mol ^<-1>/RT)。采用粉末状金属-氮化硅混合物,通过测量反应过程中的释放氮来观察反应行为。实验结果与块体样品的实验结果基本一致。此外,镍合金中的铝、钛、铬等合金元素促进了氮化硅的分解。但是,它们的大量存在对合金元素形成氮化物和硅化物的固溶体形成有不良影响。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

ATARASHIYA Koji其他文献

ATARASHIYA Koji的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

相似海外基金

Monolithic generation & detection of squeezed light in silicon nitride photonics (Mono-Squeeze)
单片一代
  • 批准号:
    EP/X016218/1
  • 财政年份:
    2024
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Research Grant
Monolithic generation & detection of squeezed light in silicon nitride photonics (Mono-Squeeze)
单片一代
  • 批准号:
    EP/X016749/1
  • 财政年份:
    2024
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Research Grant
Study of silicon nitride thin films as optical mirror coatings for cryogenic based gravitational wave detectors
氮化硅薄膜作为低温引力波探测器光学镜涂层的研究
  • 批准号:
    ST/X00533X/1
  • 财政年份:
    2023
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Training Grant
Improved Detection of Gravitational Waves using Silicon Nitride Thin Films Under Cryogenic Conditions.
在低温条件下使用氮化硅薄膜改进引力波检测。
  • 批准号:
    2903348
  • 财政年份:
    2023
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Studentship
Silicon Nitride for Quantum Computing (SiNQ)
用于量子计算的氮化硅 (SiNQ)
  • 批准号:
    10074567
  • 财政年份:
    2023
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Feasibility Studies
Controls of nano defects in Silicon nitride films by using atomic hydrogen treatment
利用原子氢处理控制氮化硅薄膜中的纳米缺陷
  • 批准号:
    22K04743
  • 财政年份:
    2022
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development and Pre-Clinical Testing of Antimicrobial PEKK/Silicon Nitride Trauma Plates with Carbon Fiber Reinforcement
碳纤维增强抗菌 PEKK/氮化硅创伤板的开发和临床前测试
  • 批准号:
    10600180
  • 财政年份:
    2022
  • 资助金额:
    $ 1.34万
  • 项目类别:
Multi-layer On-chip Integrated Optical Phased Arrays on Silicon Nitride Platform
氮化硅平台上的多层片上集成光学相控阵
  • 批准号:
    576005-2022
  • 财政年份:
    2022
  • 资助金额:
    $ 1.34万
  • 项目类别:
    Alexander Graham Bell Canada Graduate Scholarships - Master's
Development and Pre-Clinical Testing of PEKK/Silicon Nitride Composite Craniomaxillofacial Implants
PEKK/氮化硅复合颅颌面植入物的开发和临床前测试
  • 批准号:
    10381823
  • 财政年份:
    2022
  • 资助金额:
    $ 1.34万
  • 项目类别:
3D Printed Silicon Nitride Porous PEEK Composite Spinal Cages for Anti-Infection
3D 打印氮化硅多孔 PEEK 复合脊柱笼用于抗感染
  • 批准号:
    10819309
  • 财政年份:
    2021
  • 资助金额:
    $ 1.34万
  • 项目类别:
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了