Young's Modulus Measurement of Thin Films for Electric Devices
Young's Modulus Measurement of Thin Films for Electric Devices
批准号:
04555030
负责人:
OHNAMI Masateru
金额:
$6.14万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1993
中文摘要
为了测量薄膜的杨氏模量,开发了高分辨率三点弯曲机和高分辨率共振测量机。该仪器可以测量杨氏模量,精度达到三级,并经初步试验证实。 1.使用三点弯曲机测量Co-Ta-Zr薄膜的杨氏模量。薄膜的厚度范围为10微米至1微米。厚度大于3.5微米的薄膜的杨氏模量为150GPa,而厚度小于3.5微米的薄膜的杨氏模量随着厚度的减小而增加。 1微米厚薄膜的杨氏模量为250GPa,约为4.5微米厚薄膜的1.7倍。通过弹性应变能和表面能的能量平衡讨论了杨氏模量随厚度减小而增大的情况。 2. Cr薄膜的杨氏模量采用共振法测定。 Cr薄膜和Co-Ta-Zr薄膜的杨氏模量均随着薄膜厚度的减小而增大。 4.根据上述证据,得出结论:在临界厚度处,薄膜的杨氏模量随着薄膜厚度的减小而增加。
英文摘要
For measuring the Young's modulus of thin films, a high resolution three-points bending machine and a high resolution resonance measuring machine were developed. These machines could measure the Young's modulus with three order accuracy, which was confirmed by preliminary tests.1. Young's modulus of Co-Ta-Zr thin film was measured by using the three-points bending machine. The thickness of thin films was ranged from 10 micron meter to 1 micron meter. The Young's modulus of the films thicker than 3.5 micron meter was 150 GPa but that of the films thinner than 3.5 micron meter is increased with decreasing thickness. Young's modulus of 1 micron meter film in thickness is 250 GPa which is about 1.7 times of 4.5 micron meter film in thickness. The increase in Young's modulus with decreasing thickness was discussed by the energy balance of elastic strain energy and surface energy.2. Young's modulus of Cr thin film was measured by resonance method. Young's modulus of Cr thin films is increased with decreasing film thickness as well as Co-Ta-Zr films.4. Form the above evidence, it is concluded that the Young's modulus of thin films increases with decreasing film thickness at a critical thickness.
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Kiyoshi Hashimoto: "Young's Modulus of Thin Films Measured by High Resolution Three-Points Bending Machine" ASME 1994 WAM Symposia on Materials & Mechanics in Electronic Packaging for 21st Century. (予定). (1994)
Kiyoshi Hashimoto:“用高分辨率三点弯曲机测量的薄膜杨氏模量”ASME 1994 WAM 21 世纪电子封装材料与力学研讨会(计划)。
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Kiyoshi Hashimoto: "Development of three-points bending mechine for measuring Young's modulus of thin films for electric devices and experiments" J.Soc.Mater.Sci.Japan. (in press).
Kiyoshi Hashimoto:“开发用于测量电子器件和实验薄膜杨氏模量的三点弯曲机”J.Soc.Mater.Sci.Japan。
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橋本清司: "電子デバイス用薄膜の3点曲げ試験によるヤング率測定法の開発" 日本機械学会関西支部第68期定時総会講演会講演論文集. No.934-1. 156-158 (1993)
Seiji Hashimoto:“使用电子器件薄膜三点弯曲测试的杨氏模量测量方法的开发”日本机械工程师学会关西分会第 68 届年会会议记录第 934-1 号。 158 (1993)
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Kiyoshi Hashimoto: "Development of three-points bending mechine for measuring Young's modulus of thin films for electric devices" Proc.Japan Soc.Mech.Eng.Nol.934-1. 156-158 (1993)
Kiyoshi Hashimoto:“开发用于测量电子器件薄膜杨氏模量的三点弯曲机”Proc.Japan Soc.Mech.Eng.Nol.934-1。
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通讯作者:
"Young's modulus of thin films measured by high resolution three-points bending mehcine" ASME 1994 WAM Symposia on Materials & Mechanics in Electric Packaging for 21st Century. (1994)
“通过高分辨率三点弯曲机测量的薄膜杨氏模量”ASME 1994 WAM 材料研讨会
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